3N163, 3N164 P-CHANNEL ENHANCEMENT MODE MOSFET Linear Integrated Systems FEATURES VERY HIGH INPUT IMPEDANCE HIGH GATE BREAKDOWN ULTRA LOW LEAKAGE FAST SWITCHING LOW CAPACITANCE ABSOLUTE MAXIMUM RATINGS (NOTE 1) @ 25°C (unless otherwise noted) Drain-Source or Drain-Gate Voltage 3N163 3N164 Transient G-S Voltage (NOTE 1) Drain Current Storage Temperature Power Dissipation D S G Case 2 3 1 4 S D -40V -30V ±125V 50mA -65°C to +200°C 375mW G Case 18 X 30 MILS ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted) SYMBOL CHARACTERISTICS 3N163 3N164 MIN MAX MIN MAX Gate Forward Current -10 -10 pA IGSSF TA=+125°C -25 UNITS CONDITIONS VGS=-40V -25 TO-72 Bottom View VDS=0 (3N163) VGS=-30V VDS=0 (3N164) ID=-10µA VGS=0 IS=-10µA VGD=0 BVDSS Drain-Source Breakdown Voltage -40 -30 BVSDS Source-Drain Breakdown Voltage -40 -30 VGS(th) Threshold Voltage -2.0 -5.0 -2.0 -5.0 VDS=VGS ID=-10µA VGS(th) Threshold Voltage -2.0 -5.0 -2.0 -5.0 VDS=-15V ID=-10µA VGS Gate Source Voltage -3.0 -6.5 -3.0 -6.5 VDS=-15V ID=-0.5mA V IDSS Zero Gate Voltage Drain Current 200 400 ISDS Source Drain Current 400 800 rDS(on) Drain-Source on Resistance 300 ID(on) On Drain Current -5.0 -30 -3.0 -30 gfs Forward Transconductance 2000 4000 1000 4000 gos Output Admittance 250 250 Ciss Input Capacitance-Output Shorted 2.5 2.5 Crss Reverse Transfer Capacitance 0.7 0.7 Coss Output Capacitance Input Shorted 3.0 3.0 Linear Integrated Systems 250 pA VBD=0 VDS=-15V VGS=0 VDS=15V VGS=VDB=0 ohms VGS=-20V ID=-100µA mA µs VDS=-15V VGS=-10V VDS=-15V ID=-10mA f=1kHz pF VDS=-15V ID=-10mA f=1MHz (NOTE 2) 4042 Clipper Ct., Fremont, CA 94538 TEL: (510) 490-9160 • FAX: (510) 353-0261 SWITCHING CHARACTERISTICS TA=25°C and VBS=0 unless otherwise noted) SYMBOL CHARACTERISTICS 3N163 MIN MAX 12 3N164 MIN MAX 12 UNITS ns CONDITIONS ton Turn-On Delay Time VDD=-15V tr Rise Time 24 24 ID(on)=-10mA toff Turn-Off Time 50 50 RG=RL=1.4KΩ (NOTE 2) TYPICAL SWITCHING WAVEFORM VDD 10% 10% R1 tr R2 VOUT t on 90% 10% 10% t off 50 Ω INPUT PULSE Rise Time ≤2ns Pulse Width ≥200ns Switching Times Test Circuit SAMPLING SCOPE Tr ≤0.2ns CIN ≤2pF RIN≥10M Switching Times Test Circuit NOTES: 1. Devices must not be tested at ±125V more than once, nor for longer than 300ms. 2. For design reference only, not 100% tested. Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions above those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Linear Integrated Systems 4042 Clipper Ct., Fremont, CA 94538 TEL: (510) 490-9160 • FAX: (510) 353-0261