LS358 LOG CONFORMANCE MONOLITHIC DUAL PNP TRANSISTORS Linear Integrated Systems FEATURES ∆re ≤1Ω from ideal TYP. LOG CONFORMANCE ABSOLUTE MAXIMUM RATINGS NOTE 1 @ 25°C (unless otherwise noted) Collector Current IC C2 E1 5 B1 BOTH SIDES 500mW 4.3mW/°C E1 E2 UNITS Ω 7 C2 B2 26 X 29 MILS ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted) SYMBOL CHARACTERISTICS LS358 ∆re Log Conformance 1.5 BOTTOM VIEW CONDITIONS IC= 10-100-1000µA VCE = 5V BVCBO Collector-Base Breakdown Voltage 20 MIN. V IC = 10µA IE = 0 BVCEO Collector to Emitter Voltage 20 MIN. V IC = 10µA IB = 0 BVEBO Emitter-Base Breakdown Voltage 6.2 MIN. V IE = 10µA IC = 0 V IC = 10µA IE = 0 IC = 10µA VCE = 5V IC = 100µA VCE = 5V IC = 1mA VCE = 5V BVCCO Collector to Collector Voltage 45 MIN. hFE DC Current Gain hFE DC Current Gain MIN. MAX. MIN. MAX. MIN. NOTE 2 hFE DC Current Gain 100 600 100 600 100 VCE(SAT) Collector Saturation Voltage 0.5 MAX. V IC = 1mAIB = 0.1 mA ICBO Collector Cutoff Current 0.2 MAX. nA IE = 0 IEBO Emitter Cutoff Current 0.2 MAX. nA IC = 0 VEB = 3V COBO Output Capacitance 2 MAX. pF IE = 0 VCB = 5V CC1C2 Collector to Collector Capacitance 2 MAX. pF VCC = 0 IC1C2 Collector to Collector Leakage Current 0.5 MAX. nA VCC = ±45V fT Current Gain Bandwidth Product 200 MIN. MHz IC = 1mA NF Narrow Band Noise Figure 3 MAX. dB Linear Integrated Systems E2 6 B2 1 C1 -65°C to +200°C +150°C ONE SIDE 250mW 2.3mW/°C 3 B1 2 10mA Maximum Temperatures Storage Temperature Range Operating Junction Temperature Maximum Power Dissipation Device Dissipation @ Free Air Linear Derating Factor C1 VCB = 15V VCE = 5V IC = 100µA VCE = 5V BW = 200Hz f=1KHz RG = 10 KΩ 4042 Clipper Court, Fremont, CA 94538 • TEL: (510) 490-9160 • FAX: (510) 353-0261 MATCHING CHARACTERISTICS @ 25°C (unless otherwise noted) SYMBOL PARAMETER LS358 Base Emitter Voltage Differential 0.4 TYP. |VBE1-VBE2| 1 MAX. UNITS CONDITIONS mV IC = 10 µA mV VCE = 5V VCE = 5V Base Emitter Voltage Differential 1 TYP. µV/°C Change with Temperature 10 MAX. µV/°C TA= -55°C to +125°C |IB1- IB2| Base Current Differential 5 MAX. nA I = 10µA V = 5V |∆(IB1- IB2)|/°C Base Current Differential 0.5 MAX. nA/°C I = 10 µA V = 5V ∆|(VBE1-VBE2)|/°C DC Current Gain Differential 5 TO-71 TYP. % 0.230 DIA. 0.209 0.030 MAX. 0.150 0.115 6 LEADS CE C CE I = 10µA V C CE TO-78 0.500 MIN. 0.019 DIA. 0.016 0.305 0.335 0.320 (8.13) 0.290 (7.37) 0.335 0.370 MAX. 0.040 0.165 0.185 0.016 0.019 DIM. A MIN. 0.500 0.016 0.021 DIM. B = 5V P-DIP Six Lead 0.195 DIA. 0.175 C TA= -55°C to +125°C Change with Temperature hFE1/hFE2 IC= 10 µA SEATING PLANE 0.405 (10.29) MAX. C1 B1 E1 N/C 1 2 3 4 8 7 6 5 C2 B2 E2 N/C 0.200 0.100 0.050 5 6 1 8 0.046 0.036 7 SOIC 2 3 4 1 5 8 7 6 2 3 4 45° 0.100 0.029 0.045 0.150 (3.81) 0.158 (4.01) 0.100 45° 0.048 0.028 0.188 (4.78) 0.197 (5.00) 0.028 0.034 C1 B1 E1 N/C 1 2 3 8 C2 7 B2 6 E2 4 5 N/C 0.228 (5.79) 0.244 (6.20) NOTES: 1. These ratings are limiting values above which the serviceability of any semiconductor may be impaired. 2. The reverse base-to-emitter voltage must never exceed 6.2 volts; the reverse base-to-emitter current must never exceed 10 µA. Linear Integrated Systems 4042 Clipper Court, Fremont, CA 94538 • TEL: (510) 490-9160 • FAX: (510) 353-0261