IT124 SUPER-BETA MONOLITHIC DUAL NPN TRANSISTORS Linear Integrated Systems FEATURES Direct Replacement for Intersil IT124 Pin for Pin Compatible C1 C2 E1 ABSOLUTE MAXIMUM RATINGS NOTE 1 (TA= 25°C unless otherwise noted) IC Collector-Current Maximum Power Dissipation Device Dissipation @ Free Air Linear Derating Factor B1 BOTH SIDES 500mW 4.3mW/°C E1 E2 7 C2 B2 26 X 29 MILS BOTTOM VIEW ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted) SYMBOL CHARACTERISTICS IT124 Collector-Base Breakdown Voltage 2 BVCBO MIN. UNITS V CONDITIONS IC = 10µA IE = 0 BVCEO Collector to Emitter Voltage 2 MIN. V IC = 10µA IB = 0 BVEBO Emitter-Base Breakdown Voltage 6.2 MIN. V IE = 10µA IC = 0 V NOTE 2 BVCCO Collector to Collector Voltage 100 MIN. IC = 10µA IE = 0 hFE DC Current Gain 1500 MIN. IC = 1µA VCE = 1V hFE DC Current Gain 1500 MIN. IC = 10µA VCE = 1V VCE(SAT) Collector Saturation Voltage 0.5 MAX. V IC = 1mAIB = 0.1 mA ICBO Collector Cutoff Current 100 MAX. pA IE = 0 IEBO Emitter Cutoff Current 100 MAX. pA IC = 0 VEB = 3V COBO Output Capacitance 2 MAX. pF IE = 0 VCB = 1V CC1C2 Collector to Collector Capacitance 2 MAX. pF VCC = 0 IC1C2 Collector to Collector Leakage Current 250 MAX. pA VCC = ±50V fT Current Gain Bandwidth Product 100 MIN. MHz IC = 100µA NF Narrow Band Noise Figure 3 MAX. dB Linear Integrated Systems E2 6 B2 1 C1 -65°C to +200°C +150°C ONE SIDE 250mW 2.3mW/°C 5 B1 2 10mA Maximum Temperatures Storage Temperature Range Operating Junction Temperature 3 VCB = 1V VCE = 1V IC = 10µA VCE = 3V RG = 10 KΩ BW = 200Hz f=1KHz 4042 Clipper Court, Fremont, CA 94538 • TEL: (510) 490-9160 • FAX: (510) 353-0261 MATCHING CHARACTERISTICS @ 25°C (unless otherwise noted) SYMBOL CHARACTERISTICS IT124 Base Emitter Voltage Differential 2 |VBE1-VBE2| 5 ∆|(VBE1-VBE2)|/∆T |IB1- IB2| TYP. MAX. UNITS mV mV CONDITIONS IC = 10 µA Base Emitter Voltage Differential 5 TYP. µV/°C Change with Temperature 15 MAX. µV/°C T = -55°C Base Current Differential 0.6 MAX. nA IC = 10µA TO-71 0.230 DIA. 0.209 0.030 MAX. 0.150 0.115 6 LEADS IC = 10 µA TO-78 0.500 MIN. 0.019 DIA. 0.016 0.305 0.335 MAX. 0.040 0.165 0.185 MIN. 0.500 0.016 0.021 DIM. B +125°C VCE = 1V 0.320 (8.13) 0.290 (7.37) 0.335 0.370 0.016 0.019 DIM. A VCE = 1V to P-DIP Six Lead 0.195 DIA. 0.175 VCE = 1V SEATING PLANE 0.405 (10.29) MAX. C1 B1 E1 N/C 1 2 3 4 8 7 6 5 C2 B2 E2 N/C 0.200 0.100 0.050 5 6 45° 0.046 0.036 7 SOIC 2 3 4 1 5 8 7 6 2 3 4 1 8 0.100 0.029 0.045 0.150 (3.81) 0.158 (4.01) 0.100 45° 0.048 0.028 0.028 0.034 0.188 (4.78) 0.197 (5.00) C1 B1 E1 N/C 1 2 3 4 8 7 6 5 C2 B2 E2 N/C 0.228 (5.79) 0.244 (6.20) NOTES: 1. These ratings are limiting values above which the serviceability of any semiconductor may be impaired. 2. The reverse base-to-emitter voltage must never exceed 6.2 volts; the reverse base-to-emitter current must never exceed 10 µA. Linear Integrated Systems 4042 Clipper Court, Fremont, CA 94538 • TEL: (510) 490-9160 • FAX: (510) 353-0261