LS301 LS302 LS303 HIGH VOLTAGE SUPER-BETA MONOLITHIC DUAL NPN TRANSISTORS FEATURES VERY HIGH GAIN hFE 2000 @ 1.0µA TYP. LOW OUTPUT CAPACITANCE COBO 2.0pF TIGHT VBE MATCHING IVBE1-VBE2I=0.2mV TYP. HIGH fT 100 MHz ABSOLUTE MAXIMUM RATINGS NOTE 1 @ 25 °C (unless otherwise stated) IC Collector Current 5mA Maximum Temperatures Storage Temperature -55 to +150 °C Operating Junction Temperature -55 to +150 °C TO-71 & TO-78 TOP VIEW Maximum Power Dissipation ONE SIDE Device Dissipation @ Free Air 250mW 500mW Linear Derating Factor 2.3mW/°C 4.3mW/°C SOIC TOP VIEW BOTH SIDES ELECTRICAL CHARACTERISTICS @ 25 °C (unless otherwise stated) SYMBOL CHARACTERISTIC LS301 LS302 LS303 BVCBO Collector to Base Voltage BVCEO Collector to Emitter Voltage 18 BVEBO Emitter-Base Breakdown Voltage 6.0 BVCCO Collector To Collector Voltage 80 hFE DC Current Gain hFE DC Current Gain hFE DC Current Gain VCE(SAT) Collector Saturation Voltage ICBO 18 35 UNITS CONDITIONS 10 MIN. V IC = 10µA IE = 0 35 10 MIN. V IC = 1mA 6.0 6.0 MIN. V IE = 10µA 80 20 MIN. V IC = 1µA IE = IB = 0 2000 1000 2000 TYP. IC = 1µA VCE = 5V 2000 1000 2000 MIN. IC = 10µA VCE = 5V 2000 1000 2000 TYP. IC = 500µA VCE = 5V 0.5 0.5 0.5 MAX. V IC = 1mA IB = 0.1mA Collector Cutoff Current 100 100 100 MAX. pA IE = 0 VCB = NOTE 3 IEBO Emitter Cutoff Current 0.2 0.2 0.2 MAX. pA IE = 0 VEB = 3V COBO Output Capacitance 2 2 2 MAX. pF IE = 0 VCB = 1V CC1C2 Collector to Collector Capacitance 2 2 2 MAX. pF VCC = 0 IC1C2 Collector to Collector Leakage Current 1.0 1.0 1.0 MAX. µA VCC = NOTE 4, IE = IB = 0 fT Current Gain Bandwidth Product 100 100 100 MIN. MHz IC = 200µA VCE = 5V NF Narrow Band Noise Figure 3 3 3 MAX. dB IC = 10µA VCE = 3V BW = 200Hz RG = 10K IB = 0 IC = 0 NOTE 2 f = 1KHz Linear Integrated Systems • 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261 Doc 201116 05/15/2014 Rev#A4 ECN# LS301 LS302 LS303 MATCHING CHARACTERISTICS SYMBOL CHARACTERISTIC IVBE1-VBE2I Base Emitter Voltage Differential I(V BE1-VBE2)I/°C Base Emitter Voltage Differential Change with Temperature IIB1- IB2I hFE1/hFE2 Base Current Differential LS301 LS302 LS303 UNITS 0.2 0.2 0.2 TYP. 1 1 1 MAX. mV 1 1 1 TYP. 5 5 5 0.5 1 1 5 5 5 DC Current Gain Differential mV CONDITIONS IC = 10µA VCE = 5V µV/°C IC = 10µA VCE = 5V MAX. µV/°C T = 55°C to 0.5 TYP. nA IC = 10µA VCE = 1V 1.5 MAX. nA IC = 10µA VCE = 5V 5 TYP. % IC = 10µA VCE = 5V +125°C 0.210 0.210 0.170 0.170 4 4 8 8 NOTES: 1. These ratings are limiting values above which the serviceability of any semiconductor may be impaired 2. The reverse base-to-emitter voltage must never exceed 6.0 volts; the reverse base-to-emitter current must never exceed 10 µAmps. 3. For LS301 & LS302: VCB=10V; for LS303: VCB=5V 4. For LS301 & LS302: VCC=±80V; for LS303: VCC=±20V Information furnished by Linear Integrated Systems is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems. Linear Integrated Systems (LIS) is a 25-year-old, third-generation precision semiconductor company providing high-quality discrete components. Expertise brought to LIS is based on processes and products developed at Amelco, Union Carbide, Intersil and Micro Power Systems by company President John H. Hall. Hall, a protégé of Silicon Valley legend Dr. Jean Hoerni, was the director of IC Development at Union Carbide, Co-Founder and Vice President of R&D at Intersil, and Founder/President of Micro Power Systems. Linear Integrated Systems • 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261 Doc 201116 05/15/2014 Rev#A4 ECN# LS301 LS302 LS303