LS310 LS311 LS312 LS313 MONOLITHIC DUAL NPN TRANSISTORS Linear Integrated Systems FEATURES hFE ≥ 200 @ 10µA-1mA VERY HIGH GAIN TIGHT VBE MATCHING |VBE1-VBE2| = 0.2mV TYP. HIGH fT 250MHz TYP. @ 1mA C1 E1 C2 ABSOLUTE MAXIMUM RATINGS NOTE 1 @ 25°C (unless otherwise noted) Collector Current 10mA IC Maximum Temperatures Storage Temperature Operating Junction Temperature 5 E2 B12 ONE SIDE 250mW 2.3mW/°C 6 B2 1 C1 -65° to +200°C +150°C B1 Maximum Power Dissipation Device Dissipation @ Free Air Linear Derating Factor 3 BOTH SIDES 500mW 4.3mW/°C E1 E2 7 C2 B2 26 X 29 MILS BOTTOM VIEW ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted) SYMBOL CHARACTERISTICS LS310 LS311 LS312 LS313 UNITS CONDITIONS Collector to Base Voltage 25 45 60 45 MIN. V IC = 10µA IE = 0 BVCBO BVCEO Collector to Emitter Voltage 25 45 60 45 MIN. V IC = 10µA IB = 0 BVEBO Emitter-Base Breakdown Voltage 6.2 6.2 6.2 6.2 MIN. V IE = 10µA IC = 0 BVCCO Collector to Collector Voltage 30 100 100 100 MIN. V IC = 10µA IE = 0 hFE DC Current Gain 150 150 200 IC = 10µA VCE = 5V hFE DC Current Gain 150 150 200 400 MIN. 1000 MAX. 400 MIN. hFE DC Current Gain 150 150 200 400 MIN. IC = 1mA VCE = 5V VCE(SAT) Collector Saturation Voltage 0.25 0.25 0.25 0.25 MAX. IC = 1mA IB = 0.1mA NOTE 2 IC = 100µA VCE = 5V V ICBO Collector Cutoff Current 0.2 0.2 0.2 0.2 MAX. nA IE = 0 VCB = NOTE 3 IEBO Emitter Cutoff Current 0.2 0.2 0.2 0.2 MAX. nA IE = 0 VCB = 3V COBO Output Capacitance 2 2 2 2 MAX. pF IE = 0 VCB = 5V CC1C2 Collector to Collector Capacitance 2 2 2 2 MAX. pF VCC = 0 IC1C2 Collector to Collector Leakage Current 0.5 0.5 0.5 0.5 MAX. nA VCC = NOTE 4 fT Current Gain Bandwidth Product 200 200 200 200 MIN. MHz IC = 1mA NF Narrow Band Noise Figure 3 3 3 3 MAX. dB IC = 100µA VCE = 5V VCE = 5V BW = 200Hz, RG = 10 KΩ f=1KHz Linear Integrated Systems 4042 Clipper Court, Fremont, CA 94538 • TEL: (510) 490-9160 • FAX: (510) 353-0261 ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted) SYMBOL CHARACTERISTICS LS310 LS311 LS312 LS313 MIN. UNITS CONDITIONS |VBE1-VBE2| Base Emitter Voltage Differential ∆|(VBE1-VBE2)|/°C Base Emitter Voltage Differential Change with Temperature |IB1- IB2| 1 0.4 0.2 0.4 TYP. mV IC = 10 µA VCE = 5V 3 1 0.5 1 MAX mV. 2 1 0.5 1 TYP. µV/°C IC = 10 µA VCE = 5V 15 5 2 5 MAX. TA = -55°C to +125°C TYP. nA MAX. nA VCE = 5V 5 1.25 5 IC = 10µA 10 0.5 0.3 0.5 MAX. nA/°C IC = 10µA VCE = 5V Base Current Differential |∆(IB1-IB2)|/°C Base Current Differential Change With Temperature hFE1/hFE2 TA = -55°C to +125°C Current Gain Differential 10 TO-71 5 5 0.230 DIA. 0.209 0.030 MAX. 0.150 0.115 6 LEADS TYP. % IC = 10µA TO-78 0.500 MIN. 0.019 DIA. 0.016 0.305 0.335 0.320 (8.13) 0.290 (7.37) 0.335 0.370 MAX. 0.040 0.165 0.185 0.016 0.019 DIM. A MIN. 0.500 0.016 0.021 DIM. B VCE = 5V P-DIP Six Lead 0.195 DIA. 0.175 5 SEATING PLANE 0.405 (10.29) MAX. C1 B1 E1 N/C 1 2 3 4 8 7 6 5 C2 B2 E2 N/C 0.200 0.100 0.050 5 6 1 8 0.046 0.036 7 SOIC 2 3 4 1 5 8 7 6 2 3 4 45° 0.100 0.029 0.045 0.150 (3.81) 0.158 (4.01) 0.100 45° 0.048 0.028 0.188 (4.78) 0.197 (5.00) 0.028 0.034 C1 B1 E1 N/C 1 2 3 4 8 7 6 5 C2 B2 E2 N/C 0.228 (5.79) 0.244 (6.20) NOTES: 1. These ratings are limiting values above which the serviceability of any semiconductor may be impaired. 2. The reverse base-to-emitter voltage must never exceed 6.2 volts; the reverse base-to-emitter current must never exceed 10 µA. 3. For LS310: VCB= 20V; for LS311, LS312 & LS313: VCB = 30V. 4. For LS310, LS311 & LS313: VCC= ±45V; for LS312: VCC= ±100V. Linear Integrated Systems 4042 Clipper Court, Fremont, CA 94538 • TEL: (510) 490-9160 • FAX: (510) 353-0261