LS310 LS311 LS312 LS313 MONOLITHIC DUAL NPN TRANSISTORS FEATURES VERY HIGH GAIN hFE≥200@10µA-1mA TIGHT VBE MATCHING |VBE1 -VBE1| = 0.2mV TYP. HIGH fT 250MHz TYP. @ 1mA ABSOLUTE MAXIMUM RATINGS NOTE 1 @ 25°C (unless otherwise noted) Collector Current IC 10mA Maximum Temperatures Storage Temperature -55° to +150°C Operating Junction Temperature -55° to +150°C Maximum Power Dissipation Device Dissipation @ Free Air Linear Derating Factor Top View SOT-23 6 LEADS ONE SIDE BOTH SIDES 250mW 500mW 2.3mW/°C 4.3mW/°C Top View TO-71 & TO-78 ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted) SYMBOL CHARACTERISTICS LS310 LS311 LS312 LS313 UNITS CONDITIONS BVCBO Collector to Base Voltage 25 45 60 45 MIN. V IC = 10µA, IE = 0 BVCEO Collector to Emitter Voltage Emitter-Base Breakdown Voltage Collector to Collector Voltage 25 45 60 45 MIN. V IC = 1mA, IB = 0 6.0 6.0 6.0 6.0 MIN. V IE = 10µA, IC = 0 45 45 60 IC = 10µA, IE = IB = 0A DC Current Gain 150 150 200 hFE DC Current Gain 150 150 200 MIN. MIN. MAX. MIN. V hFE 45 400 1000 400 hFE DC Current Gain 150 150 200 400 MIN. Collector Saturation Voltage 0.25 0.25 0.25 0.25 MAX. V IC = 1mA, IB = 0.1mA ICBO Collector Cutoff Current 0.2 0.2 0.2 0.2 MAX. nA IE = 0, VCB = NOTE 3 IEBO Emitter Cutoff Current 0.2 0.2 0.2 0.2 MAX. nA IC = 0, VCB = 3V COBO Out put Capacitance Collector to Collector Capacitance Collector to Collector Leakage Current Current Gain Bandwidth Product 2 2 2 2 MAX. pF IE = 0, VCB = 5V 2 2 2 2 MAX. pF VCC = 0V 1.0 1.0 1.0 1.0 MAX. µA VCC = NOTE 4 200 200 200 200 MIN. MHz 3 3 3 3 MAX. dB BVEBO BVCCO VCE(SAT) CC1C2 IC1C2 fT NF Narrow Band Noise Figure Linear Integrated Systems • NOTE 2 IC = 10µA, VCE = 5V IC = 100µA, VCE = 5V IC = 1mA, VCE = 5V IC = 1mA , VCE = 5V IC = 100µA , VCE = 5V BW = 200Hz, RG = 10KΩ F=1KHz 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261 Doc 201121 03/17/2014 Rev#A10 ECN# LS310_11_12_13 ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted) SYMBOL CHARACTERISTICS |VBE1-VBE2| Base Emitter Voltage Differential ∆|(VBE1-VBE2)|/°C Base Emitter Voltage Differential Change with Temperature |IB1-IB2| |∆ (IB1-IB2)|/°C hFE1/hFE2 LS310 LS311 LS312 LS313 MIN. UNITS 1 3 2 15 Base Current Differential Base Current Differential Change with Temperature Current Gain Differential 0.4 1 1 5 0.2 0.5 0.5 2 10 0.5 5 0.3 0.4 1 1 5 1.25 5 0.5 5 5 5 10 TYP. mV MAX. mV TYP. µV/°C MAX. TYP. nA MAX. nA MAX. nA/°C TYP. % CONDITIONS IC = 10µA, VCE = 5V IC = 10µA, VCE = 5V TA = -55°C to +125°C IC = 10µA, VCE = 5V IC = 10µA, VCE = 5V TA = -55°C to +125°C IC = 10µA, VCE = 5V NOTES: 1. These ratings are limiting values above which the serviceability of any semiconductor may be impaired. 2. The reverse base-to-emitter voltage must never exceed 6.2 volts; the reverse base-to-emitter current must never exceed 10µA. 3. For LS310: VCB = 20V; for LS311, LS312 & LS313: VCB = 30V 4. For LS310, LS311 & LS313: VCC ±45V; for LS312: VCC ±60V. Linear Integrated Systems (LIS) is a 25-year-old, third-generation precision semiconductor company providing high-quality discrete components. Expertise brought to LIS is based on processes and products developed at Amelco, Union Carbide, Intersil and Micro Power Systems by company President John H. Hall. Hall, a protégé of Silicon Valley legend Dr. Jean Hoerni, was the director of IC Development at Union Carbide, co-founder and vice president of R&D at Intersil, and founder/president of Micro Power Systems. Linear Integrated Systems • 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261 Doc 201121 03/17/2014 Rev#A10 ECN# LS310_11_12_13