LINEAR IT121

IT120A IT120 IT121 IT122
MONOLITHIC DUAL
NPN
TRANSISTORS
Linear Integrated Systems
FEATURES
Direct Replacement for Intersil IT120 Series
Pin for Pin Compatible
C1
ABSOLUTE MAXIMUM RATINGS NOTE 1
E1
C2
(TA= 25°C unless otherwise noted)
IC
Collector Current
ONE SIDE
250mW
2.3mW/°C
E2
6 B2
1
C1
-65°C to +200°C
-55°C to +150°C
B1
Maximum Power Dissipation
Device Dissipation @ Free Air
Linear Derating Factor
5
B1 2
10mA
Maximum Temperatures
Storage Temperature Range
Operating Temperature Range
3
BOTH SIDES
500mW
4.3mW/°C
E1
E2
B2
BOTTOM VIEW
26 X 29 MILS
ELECTRICAL CHARACTERISTICS TA=25°C (unless otherwise noted)
SYMBOL CHARACTERISTICS
IT120A IT120 IT121
BVCBO
Collector to Base Voltage
45
45
45
IT122
45
MIN.
7
C2
UNITS CONDITIONS
V
IC = 10µA IE = 0
BVCEO
Collector to Emitter Voltage
45
45
45
45
MIN.
V
IC = 10µA
IB = 0
BVEBO
Emitter-Base Breakdown Voltage
6.2
6.2
6.2
6.2
MIN.
V
IE = 10µA
IC = 0
BVCCO
Collector to Collector Voltage
60
60
60
60
MIN.
V
IC = 10µA
IE = 0
hFE
DC Current Gain
200
200
80
80
MIN.
IC = 10µA
VCE = 5V
225
225
100
100
MIN.
IC = 1.0mA VCE = 5V
NOTE 2
VCE(SAT) Collector Saturation Voltage
0.5
0.5
0.5
0.5
MAX.
V
IC = 0.5mA IB = 0.05mA
IEBO
Emitter Cutoff Current
1
1
1
1
MAX.
nA
IC = 0
ICBO
Collector Cutoff Current
1
1
1
1
MAX.
nA
IE = 0
VCB = 45V
COBO
Output Capacitance
2
2
2
2
MAX.
pF
IE = 0
VCB = 5V
CC1C2
Collector to Collector Capacitance
2
2
2
2
MAX.
pF
VCC = 0
IC1C2
Collector to Collector Leakage Current
10
10
10
10
MAX.
nA
VCC= ±60V
fT
Current Gain Bandwidth Product
220
220
180
180
MIN.
MHz
IC = 1mA
NF
Narrow Band Noise Figure
3
3
3
3
MAX.
dB
VEB = 3V
VCE = 5V
IC = 100µA VCE = 5V
BW = 200Hz, RG = 10 KΩ
f=1KHz
Linear Integrated Systems
4042 Clipper Court, Fremont, CA 94538 • TEL: (510) 490-9160 • FAX: (510) 353-0261
MATCHING CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL
CHARACTERISTICS
IT120A IT120
IT121
IT122
UNITS CONDITIONS
Base Emitter Voltage Differential
1
2
3
5
MAX. mV
IC = 10 µA
∆|(VBE1-VBE2)|/∆T Base Emitter Voltage Differential
3
5
10
20
MAX. µV/°C
IC = 10 µA
|VBE1-VBE2|
Change with Temperature
|IB1- IB2|
T = -55°C
Base Current Differential
2.5
TO-71
5
25
0.230
DIA.
0.209
0.030
MAX.
0.150
0.115
6 LEADS
MAX. nA
TO-78
0.500 MIN.
0.019 DIA.
0.016
0.305
0.335
MAX.
0.040 0.165
0.185
MIN. 0.500
0.016
0.021
DIM. B
+125°C
VCE = 5V
0.320 (8.13)
0.290 (7.37)
0.335
0.370
0.016
0.019
DIM. A
IC = 10 µA
VCE = 5V
to
P-DIP
Six Lead
0.195
DIA.
0.175
25
VCE = 5V
SEATING
PLANE
0.405
(10.29)
MAX.
C1
B1
E1
N/C
1
2
3
4
8
7
6
5
C2
B2
E2
N/C
0.200
0.100
0.050
5
6
1
8
0.046
0.036
7
SOIC
2 3 4
1
5
8 7 6
2 3 4
45°
0.100
0.029
0.045
0.150 (3.81)
0.158 (4.01)
0.100
45°
0.048
0.028
0.188 (4.78)
0.197 (5.00)
0.028
0.034
C1
B1
E1
N/C
1
2
3
4
8
7
6
5
C2
B2
E2
N/C
0.228 (5.79)
0.244 (6.20)
NOTES:
1. These ratings are limiting values above which the serviceability of any semiconductor may be impaired.
2. The reverse base-to-emitter voltage must never exceed 6.2 volts; the reverse base-to-emitter current must never exceed 10 µA.
Linear Integrated Systems
4042 Clipper Court, Fremont, CA 94538 • TEL: (510) 490-9160 • FAX: (510) 353-0261