LS350 LS351 LS352 MONOLITHIC DUAL PNP TRANSISTORS Linear Integrated Systems FEATURES HIGH GAIN hFE ≥ 200 @ 10µA - 1mA TIGHT VBE MATCHING |VBE1-VBE2| = 0.2mV TYP. HIGH fT 275MHz TYP. @ 1mA C1 C2 E1 ABSOLUTE MAXIMUM RATINGS NOTE 1 @ 25°C (unless otherwise noted) IC Collector Current Maximum Temperatures Storage Temperature Operating Junction Temperature Maximum Power Dissipation Device Dissipation @ Free Air Linear Derating Factor 3 5 B1 2 10mA 1 C1 -65° to +200°C +150°C ONE SIDE 250mW 2.3mW/°C B1 BOTH SIDES 500mW 4.3mW/°C E1 E2 E2 6 B2 7 C2 B2 26 X 29 MILS BOTTOM VIEW ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted) SYMBOL CHARACTERISTICS LS350 LS351 LS352 Collector to Base Voltage 25 45 60 BVCBO MIN. BVCEO Collector to Emitter Voltage 25 45 60 MIN. V IC = 10µA BVEBO Emitter to Base Voltage 6.2 6.2 6.2 MIN. V IE = 10µA BVCCO Collector to Collector Voltage 30 60 100 MIN. V IC = 10µA IE = 0 hFE DC Current Gain 100 100 IC = 100µA VCE= 5V hFE DC Current Gain 100 MIN. MAX. MIN. MAX. MIN. VCE= 5V DC Current Gain 200 600 200 600 200 IC = 10µA hFE 150 600 150 600 150 IC = 1mA, VCE= 5V UNITS V CONDITIONS IC = 10µA IE = 0 IB = 0 IC = 0 NOTE 2 VCE(SAT) Collector Saturation Voltage 0.5 0.5 0.5 MAX. V IC = 1mA ICBO Collector Cutoff Current 0.2 0.2 0.2 MAX. nA IE = 0 VCB = NOTE 3 IB = 0.1mA IEBO Emitter Cutoff Current 0.2 0.2 0.2 MAX. nA IC = 0 VEB =3V COBO Output Capacitance 2 2 2 MAX. pF IE = 0 CC1C2 Collector to Collector Capacitance 2 2 2 MAX. pF VCC = 0 VCB = 5V IC1C2 Collector to Collector Leakage Current 0.5 0.5 0.5 MAX. nA VCC = NOTE4 fT Current Gain Bandwidth Product 200 200 200 MIN. MHz IC = 1mA VCE = 5V NF Narrow Band Noise Figure 3 3 3 MAX. dB IC = 100µA VCE = 5V BW = 200Hz f = 1KHz RG = 10 KΩ Linear Integrated Systems 4042 Clipper Court, Fremont, CA 94538 • TEL: (510) 490-9160 • FAX: (510) 353-0261 MATCHING CHARACTERISTICS SYMBOL CHARACTERISTICS Base Emitter Voltage Differential |VBE1-VBE2| ∆|(VBE1-VBE2)|/°C |IB1- IB2| |∆(IB1- IB2)|/°C LS350 1 5 LS351 0.4 1.0 LS352 0.2 0.5 TYP. MAX. UNITS mV mV VCE = 5V IC= 10 µA VCE = 5V Base Emitter Voltage Differential 2 1 0.5 TYP. µV/°C Change with Temperature 20 10 2 MAX. µV/°C TA = -55°C to +125°C Base Current Differential 5 5 MAX. nA I = 10µA V Base Current Differential 0.5 0.3 MAX. nA/°C I = 10 µA, V C Change with Temperature hFE1/hFE2 CONDITIONS IC = 10 µA 10 TO-71 5 5 0.230 DIA. 0.209 0.150 0.115 6 LEADS TYP. % I = 10µA C TO-78 0.500 MIN. 0.019 DIA. 0.016 = 5V 0.305 0.335 MAX. 0.040 0.165 0.185 MIN. 0.500 0.016 0.021 DIM. B CE = 5V 0.320 (8.13) 0.290 (7.37) 0.335 0.370 0.016 0.019 DIM. A V P-DIP Six Lead 0.030 MAX. CE = 5V TA = -55°C to +125°C DC Current Gain Differential 0.195 DIA. 0.175 C CE SEATING PLANE 0.405 (10.29) MAX. C1 B1 E1 N/C 1 2 3 4 8 7 6 5 C2 B2 E2 N/C 0.200 0.100 0.050 5 6 1 8 0.046 0.036 7 SOIC 2 3 4 1 5 8 7 6 2 3 4 45° 0.100 0.029 0.045 0.150 (3.81) 0.158 (4.01) 0.100 45° 0.048 0.028 0.028 0.034 0.188 (4.78) 0.197 (5.00) C1 B1 E1 N/C 1 2 3 4 8 7 6 5 C2 B2 E2 N/C 0.228 (5.79) 0.244 (6.20) NOTES: 1. These ratings are limiting values above which the serviceability of any semiconductor may be impaired. 2. The reverse base-to-emitter voltage must never exceed 6.2 volts; the reverse base-to-emitter current must never exceed 10 µA. 3. For LS350: VCB= 20V; for LS351 & LS352: VCB= 30V. 4. For LS351: VCC= ±45V; for LS352: VCC= ±80V; for LS350: VCC= ±25V. Linear Integrated Systems 4042 Clipper Court, Fremont, CA 94538 • TEL: (510) 490-9160 • FAX: (510) 353-0261