LINEAR LS350-2

LS350 LS351 LS352
MONOLITHIC DUAL
PNP
TRANSISTORS
Linear Integrated Systems
FEATURES
HIGH GAIN
hFE ≥ 200 @ 10µA - 1mA
TIGHT VBE MATCHING
|VBE1-VBE2| = 0.2mV TYP.
HIGH fT
275MHz TYP. @ 1mA
C1
C2
E1
ABSOLUTE MAXIMUM RATINGS NOTE 1
@ 25°C (unless otherwise noted)
IC
Collector Current
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
Maximum Power Dissipation
Device Dissipation @ Free Air
Linear Derating Factor
3
5
B1 2
10mA
1
C1
-65° to +200°C
+150°C
ONE SIDE
250mW
2.3mW/°C
B1
BOTH SIDES
500mW
4.3mW/°C
E1
E2
E2
6 B2
7
C2
B2
26 X 29 MILS
BOTTOM VIEW
ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL
CHARACTERISTICS
LS350 LS351 LS352
Collector to Base Voltage
25
45
60
BVCBO
MIN.
BVCEO
Collector to Emitter Voltage
25
45
60
MIN.
V
IC = 10µA
BVEBO
Emitter to Base Voltage
6.2
6.2
6.2
MIN.
V
IE = 10µA
BVCCO
Collector to Collector Voltage
30
60
100
MIN.
V
IC = 10µA
IE = 0
hFE
DC Current Gain
100
100
IC = 100µA
VCE= 5V
hFE
DC Current Gain
100
MIN.
MAX.
MIN.
MAX.
MIN.
VCE= 5V
DC Current Gain
200
600
200
600
200
IC = 10µA
hFE
150
600
150
600
150
IC = 1mA,
VCE= 5V
UNITS
V
CONDITIONS
IC = 10µA
IE = 0
IB = 0
IC = 0
NOTE 2
VCE(SAT)
Collector Saturation Voltage
0.5
0.5
0.5
MAX.
V
IC = 1mA
ICBO
Collector Cutoff Current
0.2
0.2
0.2
MAX.
nA
IE = 0
VCB = NOTE 3
IB = 0.1mA
IEBO
Emitter Cutoff Current
0.2
0.2
0.2
MAX.
nA
IC = 0
VEB =3V
COBO
Output Capacitance
2
2
2
MAX.
pF
IE = 0
CC1C2
Collector to Collector Capacitance
2
2
2
MAX.
pF
VCC = 0
VCB = 5V
IC1C2
Collector to Collector Leakage Current
0.5
0.5
0.5
MAX.
nA
VCC = NOTE4
fT
Current Gain Bandwidth Product
200
200
200
MIN.
MHz
IC = 1mA
VCE = 5V
NF
Narrow Band Noise Figure
3
3
3
MAX.
dB
IC = 100µA
VCE = 5V
BW = 200Hz
f = 1KHz
RG = 10 KΩ
Linear Integrated Systems
4042 Clipper Court, Fremont, CA 94538 • TEL: (510) 490-9160 • FAX: (510) 353-0261
MATCHING CHARACTERISTICS
SYMBOL
CHARACTERISTICS
Base Emitter Voltage Differential
|VBE1-VBE2|
∆|(VBE1-VBE2)|/°C
|IB1- IB2|
|∆(IB1- IB2)|/°C
LS350
1
5
LS351
0.4
1.0
LS352
0.2
0.5
TYP.
MAX.
UNITS
mV
mV
VCE = 5V
IC= 10 µA
VCE = 5V
Base Emitter Voltage Differential
2
1
0.5
TYP.
µV/°C
Change with Temperature
20
10
2
MAX.
µV/°C
TA = -55°C to +125°C
Base Current Differential
5
5
MAX.
nA
I = 10µA
V
Base Current Differential
0.5
0.3
MAX.
nA/°C
I = 10 µA,
V
C
Change with Temperature
hFE1/hFE2
CONDITIONS
IC = 10 µA
10
TO-71
5
5
0.230
DIA.
0.209
0.150
0.115
6 LEADS
TYP.
%
I = 10µA
C
TO-78
0.500 MIN.
0.019 DIA.
0.016
= 5V
0.305
0.335
MAX.
0.040 0.165
0.185
MIN. 0.500
0.016
0.021
DIM. B
CE
= 5V
0.320 (8.13)
0.290 (7.37)
0.335
0.370
0.016
0.019
DIM. A
V
P-DIP
Six Lead
0.030
MAX.
CE
= 5V
TA = -55°C to +125°C
DC Current Gain Differential
0.195
DIA.
0.175
C
CE
SEATING
PLANE
0.405
(10.29)
MAX.
C1
B1
E1
N/C
1
2
3
4
8
7
6
5
C2
B2
E2
N/C
0.200
0.100
0.050
5
6
1
8
0.046
0.036
7
SOIC
2 3 4
1
5
8 7 6
2 3 4
45°
0.100
0.029
0.045
0.150 (3.81)
0.158 (4.01)
0.100
45°
0.048
0.028
0.028
0.034
0.188 (4.78)
0.197 (5.00)
C1
B1
E1
N/C
1
2
3
4
8
7
6
5
C2
B2
E2
N/C
0.228 (5.79)
0.244 (6.20)
NOTES:
1. These ratings are limiting values above which the serviceability of any semiconductor may be impaired.
2. The reverse base-to-emitter voltage must never exceed 6.2 volts; the reverse base-to-emitter current must never exceed 10 µA.
3. For LS350: VCB= 20V; for LS351 & LS352: VCB= 30V.
4. For LS351: VCC= ±45V; for LS352: VCC= ±80V; for LS350: VCC= ±25V.
Linear Integrated Systems
4042 Clipper Court, Fremont, CA 94538 • TEL: (510) 490-9160 • FAX: (510) 353-0261