PRELIMINARY DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3358 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION The 2SK3358 is N-Channel MOS Field Effect Transistor PART NUMBER PACKAGE 2SK3358 TO-220AB FEATURES 2SK3358-S TO-262 • Low on-state resistance 2SK3358-Z TO-220SMD designed for high current switching applications. RDS(on)1 = 30 mΩ MAX. (VGS = 10 V, ID = 28 A) ★ ★ RDS(on)2 = 40 mΩ MAX. (VGS = 4.5 V, ID = 20 A) • Low Ciss: Ciss = 3200 pF TYP. • Built-in gate protection diode (TO-220AB) ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) Drain to Source Voltage (VGS = 0 V) VDSS 100 V Gate to Source Voltage (VDS = 0 V) VGSS(AC) ±20 V Gate to Source Voltage (VDS = 0 V) VGSS(DC) +20, −10 V ID(DC) ±55 A ID(pulse) ±165 A Total Power Dissipation (TC = 25°C) PT 100 W Total Power Dissipation (TA = 25°C) PT 1.5 W Channel Temperature Tch 150 °C Drain Current (DC) ★ Drain Current (Pulse) Note1 Storage Temperature Tstg –55 to +150 °C Single Avalanche Current Note2 IAS 39 A Single Avalanche Energy Note2 EAS 152 mJ (TO-262) (TO-220SMD) Notes 1. PW ≤ 10 µs, Duty cycle ≤ 1 % 2. Starting Tch = 25 °C, RG = 25 Ω, VGS = 20 V → 0 V THERMAL RESISTANCE Channel to Case Rth(ch-C) 1.25 °C/W Channel to Ambient Rth(ch-A) 83.3 °C/W The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D14322EJ1V0DS00 (1st edition) Date Published April 2000 NS CP(K) Printed in Japan The mark ★ shows major revised points. © 1999 2SK3358 ELECTRICAL CHARACTERISTICS (TA = 25 °C) CHARACTERISTICS ★ SYMBOL Drain to Source On-state Resistance ★ TEST CONDITIONS MIN. TYP. MAX. UNIT RDS(on)1 VGS = 10 V, ID = 28 A 20 30 mΩ RDS(on)2 VGS = 4.5 V, ID = 20 A 28 40 mΩ VGS(off) VDS = 10 V, ID = 250 µA 1.5 2.0 2.5 V 17 35 ★ Gate to Source Cut-off Voltage ★ Forward Transfer Admittance | yfs | VDS = 10 V, ID = 28 A Drain Leakage Current IDSS VDS = 100 V, VGS = 0 V 10 µA Gate to Source Leakage Current IGSS VGS = ±20 V, VDS = 0 V ±10 µA Input Capacitance Ciss VDS = 10 V 3200 pF Output Capacitance Coss VGS = 0 V 640 pF Reverse Transfer Capacitance Crss f = 1 MHz 360 pF Turn-on Delay Time td(on) ID = 28 A 40 ns VGS(on) = 10 V 300 ns td(off) VDD = 50 V 220 ns tf RG = 10 Ω 230 ns Total Gate Charge QG ID = 55 A 84 nC Gate to Source Charge QGS VDD = 80 11 nC Gate to Drain Charge QGD VGS(on) = 10 V 31 nC VF(S-D) IF = 55 A, VGS = 0 V 1.0 V Reverse Recovery Time trr IF = 55 A, VGS = 0 V 160 ns Reverse Recovery Charge Qrr di/dt = 100 A / µs 760 nC ★ Rise Time tr Turn-off Delay Time Fall Time Body Diode Forward Voltage TEST CIRCUIT 1 AVALANCHE CAPABILITY S TEST CIRCUIT 2 SWITCHING TIME D.U.T. RG = 25 Ω D.U.T. L RL PG. 50 Ω VDD VGS = 20 → 0 V RG PG. VGS VGS Wave Form 0 90 % ID VGS 0 ID Starting Tch τ = 1 µs Duty Cycle ≤ 1 % TEST CIRCUIT 3 GATE CHARGE D.U.T. 2 IG = 2 mA RL 50 Ω VDD 10 % 0 10 % Wave Form τ VDD PG. 90 % BVDSS VDS ID 90 % VDD ID IAS VGS(on) 10 % Preliminary Data Sheet D14322EJ1V0DS00 tr td(off) td(on) ton tf toff 2SK3358 PACKAGE DRAWINGS (Unit : mm) 4.8 MAX. φ 3.6±0.2 (10) 1.3±0.2 10.0 4.8 MAX. 1.3±0.2 1 1 2 3 3 12.7 MIN. 6.0 MAX. 1.3±0.2 1.3±0.2 0.75±0.3 2.54 TYP. 0.5±0.2 0.75±0.1 2.54 TYP. 2 12.7 MIN. 4 15.5 MAX. 5.9 MIN. 4 8.5±0.2 3.0±0.3 10.6 MAX. 2)TO-262 (MP-25 Fin Cut) 1.0±0.5 1)TO-220AB (MP-25) 0.5±0.2 2.8±0.2 2.54 TYP. 2.8±0.2 1.Gate 2.Drain 3.Source 4.Fin (Drain) 2.54 TYP. 1.Gate 2.Drain 3.Source 4.Fin (Drain) 3)TO-220SMD (MP-25Z) 4.8 MAX. (10) 1.3±0.2 EQUIVALENT CIRCUIT 3.0±0.5 11±0.4 1.4±0.2 1.0±0.3 2 Remark ) .5R ) (0 .8R (0 Body Diode Gate 0.5±0.2 3 2.54 TYP. 2.8±0.2 2.54 TYP. 1 Drain 8.5±0.2 1.0±0.5 4 1.Gate 2.Drain 3.Source 4.Fin (Drain) Gate Protection Diode Source The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. Preliminary Data Sheet D14322EJ1V0DS00 3 2SK3358 • The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. • No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. 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