DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1804 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING PACKAGE DRAWING (Unit : mm) DESCRIPTION This product is a switching device which can be driven 8 directly by a 4.5 V power source. 5 The µPA1804 features a low on-state resistance and 1, 5, 8 : Drain 2, 3, 6, 7: Source 4 : Gate excellent switching characteristics, and is suitable for applications such as power switch of portable machine 1.2 MAX. 1.0±0.05 0.25 and so on. 3° +5° –3° FEATURES 0.1±0.05 • Can be driven by a 4.5 V power source 1 4 0.5 0.6 +0.15 –0.1 • Low on-state resistance RDS(on)1 = 23 mΩ MAX. (VGS = 10 V, ID = 4.0 A) RDS(on)2 = 32 mΩ MAX. (VGS = 4.5 V, ID = 4.0 A) 6.4 ±0.2 • Built-in G-S protection diode against ESD ORDERING INFORMATION PART NUMBER PACKAGE µPA1804GR-9JG 0.65 0.27 +0.03 –0.08 Power TSSOP8 ABSOLUTE MAXIMUM RATINGS (TA = 25°C) VDSS 30 V Gate to Source Voltage VGSS ±20 V Drain Current (DC) ID(DC) ±8.0 A ID(pulse) ±32 A PT 2.0 W Channel Temperature Tch 150 °C Storage Temperature Tstg –55 to +150 °C Note1 Total Power Dissipation Note2 1.0 ±0.2 0.1 0.8 MAX. 0.10 M EQUIVALENT CIRCUIT Drain to Source Voltage Drain Current (pulse) 4.4 ±0.1 0.145 ±0.055 3.15 ±0.15 3.0 ±0.1 Drain Body Diode Gate Gate Protection Diode Source Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1 % 2 2. Mounted on ceramic substrate of 5000 mm x 1.1 mm Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D13868EJ1V0DS00 (1st edition) Date Published June 1999 NS CP(K) Printed in Japan © 1998,1999 µ PA1804 ELECTRICAL CHARACTERISTICS (TA = 25 °C) CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Zero Gate Voltage Drain Current IDSS VDS = 30 V, VGS = 0 V 10 µA Gate Leakage Current IGSS VGS = ±16 V, VDS = 0 V ±10 µA VGS(off) VDS = 10 V, ID = 1 mA 1.0 2.1 2.5 V | yfs | VDS = 10 V, ID = 4.0 A 3 8.7 RDS(on)1 VGS = 10 V, ID = 4.0 A 18 23 mΩ RDS(on)2 VGS = 4.5 V, ID = 4.0 A 24 32 mΩ Gate to Source Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance S Input Capacitance Ciss VDS = 10 V 761 pF Output Capacitance Coss VGS = 0 V 258 pF Reverse Transfer Capacitance Crss f = 1 MHz 99 pF Turn-on Delay Time td(on) VDD = 15 V 24 ns tr ID = 4.0 A 83 ns VGS(on) = 10 V 46 ns tf RG = 10 Ω 29 ns Total Gate Charge QG VDS = 24 V 13.5 nC Gate to Source Charge QGS ID = 8.0 A 2.4 nC Gate to Drain Charge QGD VGS = 10 V 3.7 nC Rise Time Turn-off Delay Time td(off) Fall Time Diode Forward Voltage VF(S-D) IF = 8.0 A, VGS = 0 V 0.86 V Reverse Recovery Time trr IF = 8.0 A, VGS = 0 V 27 ns Reverse Recovery Charge Qrr di/dt = 100 A / µs 16 nC TEST CIRCUIT 1 SWITCHING TIME TEST CIRCUIT 2 GATE CHARGE D.U.T. D.U.T. RL RG RG = 10 Ω PG. VGS VGS Wave Form 0 PG. 90 % 90 % ID VGS 0 ID 10 % 0 10 % Wave Form τ τ = 1µ s Duty Cycle ≤ 1 % tr td(on) ton RL 50 Ω VDD 90 % VDD ID 2 VGS(on) 10 % IG = 2 mA td(off) tf toff Data Sheet D13868EJ1V0DS00 µ PA1804 TYPICAL CHARACTERISTICS (TA = 25 °C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA FORWARD BIAS SAFE OPERATING AREA 100 d ite V) Lim 10 = 80 R 60 40 10 V (@ PW ID(DC) =1 10 ms ms 10 0m s DC 1 0.1 20 TA = 25 ˚C Single Pulse Mounted on Ceramic Substrate of 50cm2 x 1.1mm 0 30 60 120 90 TA - Ambient Temperature - ˚C 0.01 0.1 150 10 1 100 VDS - Drain to Source Voltage - V DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE TRANSFER CHARACTERISTICS 100 30 VGS = 10 V VDS = 10 V 10 ID - Drain Current - A 25 ID - Drain Current - A ID(pulse) n) (o DS GS ID - Drain Current - A dT - Derating Factor - % 100 4.5 V 20 15 10 1 TA = −25˚C 25˚C 75˚C 125˚C 0.1 0.01 0.001 5 0.0001 0 0.2 0.6 0.4 0.8 1.0 0.00001 FORWARD TRANSFER ADMMITTANCE Vs. DRAIN CURRENT VDS = 10 V ID = 1 mA 2.0 1.5 −50 0 50 100 Tch - Channel Temperature - ˚C 100 | yfs | - Forward Transfer Admittance - S VGS(off) - Gate to Source Cut-off Voltage - V GATE TO SOURCE CUTOFF VOLTAGE vs. CHANNEL TEMPERATURE 2.5 4.0 2.0 3.0 VGS - Gate to Sorce Voltage - V 1.0 VDS - Drain to Source Voltage - V VDS = 10 V 10 TA = −25˚C 25˚C 75˚C 125˚C 1 0.1 150 0.01 0.1 1 10 100 ID - Drain Current - A Data Sheet D13868EJ1V0DS00 3 50 VGS = 4.5 V 40 TA = 125˚C 75˚C 30 25˚C −25˚C 20 RDS (on) - Drain to Source On-state Resistance - mΩ 10 0.01 0.1 1 10 ID - Drain Current - A 100 DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 40 ID = 4.0 A VGS = 4.5 V 30 10 V 20 10 −50 0 50 100 150 RDS (on) - Drain to Source On-state Resistance - mΩ RDS(on) - Drain to Source On-state Resistance - mΩ DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT RDS(on) - Drain to Source On-state Resistance - mΩ µ PA1804 DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 40 30 TA = 125˚C 75˚C 20 10 0.01 40 30 20 10 0 4 12 8 16 20 SWITCHING CHARACTERISTICS 1000 f = 1 MHz VGS = 0 V td(on), tr, td(off), tf - Swwitchig Time - ns Ciss, Coss, Crss - Capacitance - pF 100 VGS - Gate to Source Voltage - V 1000 Ciss Coss 100 Crss 10 10 100 tr 100 tf td(off) td(on) 10 VDD = 15 V VGS(on) = 10V 1 RG = 10 Ω 0.1 VDS - Drain Source Voltage - V 4 0.1 1 10 ID - Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 50 ID = 4.0 A CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 1 25˚C −25˚C Tch - Channel Temperature - ˚C 10000 VGS = 10 V 1 ID - Drain Current - A Data Sheet D13868EJ1V0DS00 10 µ PA1804 DYNAMIC INPUT CHARACTERISTICS 12 ID = 8.0 A VGS - Gate to Source Voltage - V IF - Source to Drain Current - A SOURCE TO DRAIN DIODE FORWARD VOLTAGE 100 10 1 0.1 0.01 0.4 0.8 0.6 1.2 1.0 10 VDD = 24 V 15 V 6V 8 6 4 2 0 2 VF(S-D) - Source to Drain Voltage - V 4 6 8 10 12 14 16 Qg - Gate Charge - nC TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH rth(ch-A) - Transient Thermal Resistance - ˚C/W 1000 Mounted on ceramic Substrate of 50 cm2 x 1.1 mm Single Pulse 100 62.5˚C/W 10 1 0.1 0.001 0.01 0.1 1 10 100 1000 PW - Pulse Width - s Data Sheet D13868EJ1V0DS00 5 µ PA1804 [MEMO] 6 Data Sheet D13868EJ1V0DS00 µ PA1804 [MEMO] Data Sheet D13868EJ1V0DS00 7 µ PA1804 • The information in this document is subject to change without notice. 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