PRELIMINARY PRODUCT INFORMATION MOS FIELD EFFECT TRANSISTOR µPA2703GR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION PACKAGE DRAWING (Unit: mm) The µPA2703GR is N-Channel MOS Field Effect Transistor 8 designed for DC/DC converters and power management 5 1, 2, 3 ; Source 4 ; Gate 5, 6, 7, 8 ; Drain applications of notebook computers. FEATURES PART NUMBER PACKAGE µPA2703GR Power SOP8 4.4 5.37 MAX. 0.15 0.05 MIN. ORDERING INFORMATION 6.0 ±0.3 4 0.8 +0.10 –0.05 1.44 1 1.8 MAX. • Low on-state resistance RDS(on)1 = 4.2 mΩ MAX. (VGS = 10 V, ID = 9.0 A) RDS(on)2 = 6.4 mΩ MAX. (VGS = 4.5 V, ID = 9.0 A) • Low Ciss: Ciss = 2600 pF TYP. (VDS = 10 V, VGS = 0 V) • Small and surface mount package (Power SOP8) 0.5 ±0.2 0.10 1.27 0.78 MAX. 0.40 +0.10 –0.05 0.12 M ABSOLUTE MAXIMUM RATINGS (TA = 25°C, All terminals are connected.) Drain to Source Voltage (VGS = 0 V) VDSS 30 V Gate to Source Voltage (VDS = 0 V) VGSS ±20 V Drain Current (DC) ID(DC) ±17 A ID(pulse) ±68 A PT 2.2 W Tch 150 °C Tstg −55 to +150 °C IAS 17 A EAS 28.9 mJ Drain Current (pulse) Note1 Total Power Dissipation (TA = 25°C) Channel Temperature Storage Temperature Single Avalanche Current Note3 Single Avalanche Energy Note3 Note2 EQUIVALENT CIRCUIT Drain Body Diode Gate Source Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1% 2 2. Mounted on ceramic substrate of 1200 mm x 2.2 mm 3. Starting Tch = 25°C, VDD = 15 V, RG = 25 Ω, L = 100 µH, VGS = 20 → 0 V Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred. The information contained in this document is being issued in advance of the production cycle for the device. The parameters for the device may change before final production or NEC Corporation, at its own discretion, may withdraw the device prior to its production. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. G16303EJ1V0PM00 (1st edition) Date Published July 2002 NS CP(K) Printed in Japan © 2002 µPA2703GR ELECTRICAL CHARACTERISTICS (TA = 25°C, All terminals are connected.) CHARACTERISTICS SYMBOL TEST CONDITIONS Zero Gate Voltage Drain Current IDSS VDS = 30 V, VGS = 0 V Gate Leakage Current IGSS VGS = ±20 V, VDS = 0 V Gate Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance MIN. TYP. MAX. UNIT 10 µA ±100 nA 2.5 V VGS(off) VDS = 10 V, ID = 1 mA 1.5 | yfs | VDS = 10 V, ID = 9.0 A 11 RDS(on)1 VGS = 10 V, ID = 9.0 A 3.3 4.2 mΩ RDS(on)2 VGS = 4.5 V, ID = 9.0 A 4.5 6.4 mΩ RDS(on)3 VGS = 4.0 V, ID = 9.0 A 5.7 7.6 mΩ 21.5 S Input Capacitance Ciss VDS = 10 V 2600 pF Output Capacitance Coss VGS = 0 V 1000 pF Reverse Transfer Capacitance Crss f = 1 MHz 340 pF Turn-on Delay Time td(on) VDD = 15 V, ID = 9.0 A 20 ns tr VGS = 10 V 24 ns td(off) RG = 10 Ω 75 ns 22 ns Rise Time Turn-off Delay Time Fall Time tf Total Gate Charge QG VDD = 15 V 26 nC Gate to Source Charge QGS VGS = 5 V 7 nC Gate to Drain Charge QGD ID = 17 A 11 nC VF(S-D) IF = 17 A, VGS = 0 V 0.8 Reverse Recovery Time trr IF = 17 A, VGS = 0 V 50 ns Reverse Recovery Charge Qrr di/dt = 100 A/ µs 51 nC Body Diode Forward Voltage TEST CIRCUIT 1 AVALANCHE CAPABILITY D.U.T. RG = 25 Ω PG. VGS = 20 → 0 V V TEST CIRCUIT 2 SWITCHING TIME D.U.T. L 50 Ω 1.2 VGS RL Wave Form RG PG. VDD VGS 0 VGS 10% 90% VDD VDS 90% BVDSS IAS VDS τ VDS ID Starting Tch τ = 1 µs Duty Cycle ≤ 1% TEST CIRCUIT 3 GATE CHARGE PG. 2 50 Ω 10% 0 10% Wave Form VDD D.U.T. IG = 2 mA 90% VDS VGS 0 RL VDD Preliminary Product Information G16303EJ1V0PM td(on) tr ton td(off) tf toff µPA2703GR [MEMO] Preliminary Product Information G16303EJ1V0PM 3 µPA2703GR • The information contained in this document is being issued in advance of the production cycle for the device. The parameters for the device may change before final production or NEC Corporation, at its own discretion, may withdraw the device prior to its production. • No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. • NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. • Descriptions of circuits, software, and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software, and information in the design of the customer's equipment shall be done under the full responsibility of the customer. NEC Corporation assumes no responsibility for any losses incurred by the customer or third parties arising from the use of these circuits, software, and information. • While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. • NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. M5 98. 8