DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1764 SWITCHING DUAL N-CHANNEL POWER MOS FET INDUSTRIAL USE PACKAGE DRAWING (Unit : mm) DESCRIPTION The µPA1764 is N-channel MOS Field Effect Transistor designed for high current switching applications. 8 5 1 : Source 1 2 : Gate 1 7, 8 : Drain 1 3 : Source 2 4 : Gate 2 5, 6 : Drain 2 FEATURES 1.44 6.0 ±0.3 4 4.4 0.8 0.15 +0.10 –0.05 5.37 MAX. 0.05 MIN. ★ 1 1.8 MAX. ★ ★ ★ • Dual chip type • Low On-state Resistance RDS(on)1 = 27 mΩ (TYP.) (VGS = 10 V, ID = 3.5 A) RDS(on)2 = 32 mΩ (TYP.) (VGS = 4.5 V, ID = 3.5 A) RDS(on)3 = 34 mΩ (TYP.) (VGS = 4.0 V, ID = 3.5 A) • Low input capacitance Ciss = 1300 pF (TYP.) • Built-in G-S protection diode • Small and surface mount package (Power SOP8) 0.5 ±0.2 0.10 1.27 0.78 MAX. 0.40 +0.10 –0.05 0.12 M ORDERING INFORMATION PART NUMBER PACKAGE µPA1764G Power SOP8 EQUIVALENT CIRCUIT (1/2 circuit) ABSOLUTE MAXIMUM RATINGS (TA = 25°C, All terminals are connected.) Drain to Source Voltage VDSS 60 V Gate to Source Voltage VGSS ±20 V Drain Current (DC) ID(DC) ±7 A Drain Current (pulse) Note1 ID(pulse) ±28 A Total Power Dissipation (1 unit) Note2 PT 1.7 W Total Power Dissipation (2 unit) Note2 PT 2.0 W Tch 150 °C Channel Temperature Storage Temperature Tstg –55 to +150 °C Single Avalanche Current Note3 IAS 7 A ★ Single Avalanche Energy Note3 EAS 98 mJ Drain Body Diode Gate Gate Protection Diode Source Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1 % 2 ★ 2. Mounted on ceramic substrate of 2000 mm x 2.2 mm 3. Starting Tch = 25 °C, RG = 25 Ω, VGS = 20 V → 0 V Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. G14329EJ1V0DS00 (1st edition) Date Published January 2000 NS CP(K) Printed in Japan The mark ★ shows major revised points. © 1999,2000 µ PA1764 ★ ELECTRICAL CHARACTERISTICS (TA = 25 °C, All terminals are connected.) CHARACTERISTICS SYMBOL Drain to Source On-state Resistance TEST CONDITIONS MIN. TYP. MAX. UNIT RDS(on)1 VGS = 10 V, ID = 3.5 A 27 35 mΩ RDS(on)2 VGS = 4.5 V, ID = 3.5 A 32 42 mΩ RDS(on)3 VGS = 4.0 V, ID = 3.5 A 34 46 mΩ VGS(off) VDS = 10 V, ID = 1 mA 1.5 2.0 2.5 V Forward Transfer Admittance | yfs | VDS = 10 V, ID = 3.5 A 5.0 9.0 Drain Leakage Current IDSS VDS = 60 V, VGS = 0 V 10 µA Gate to Source Leakage Current IGSS VGS = ±20 V, VDS = 0 V ±10 µA Input Capacitance Ciss VDS = 10 V 1300 pF Output Capacitance Coss VGS = 0 V 230 pF Reverse Transfer Capacitance Crss f = 1 MHz 110 pF Turn-on Delay Time td(on) ID = 3.5 A 15 ns VGS(on) = 10 V 69 ns td(off) VDD = 30 V 65 ns tf RG = 10 Ω 27 ns Total Gate Charge QG ID = 7.0 A 29 nC Gate to Source Charge QGS VDD = 48 V 3.6 nC Gate to Drain Charge QGD VGS = 10 V 7.4 nC VF(S-D) IF = 7.0 A, VGS = 0 V 0.84 V Reverse Recovery Time trr IF = 7.0 A, VGS = 0 V 40 ns Reverse Recovery Charge Qrr di/dt = 100 A / µs 66 nC Gate to Source Cut-off Voltage Rise Time tr Turn-off Delay Time Fall Time Body Diode Forward Voltage TEST CIRCUIT 1 AVALANCHE CAPABILITY S TEST CIRCUIT 2 SWITCHING TIME D.U.T. RG = 25 Ω D.U.T. L RL PG. 50 Ω VDD VGS = 20 → 0 V RG PG. VGS VGS Wave Form 0 90 % ID VGS 0 ID Starting Tch τ = 1 µs Duty Cycle ≤ 1 % TEST CIRCUIT 3 GATE CHARGE D.U.T. 2 IG = 2 mA RL 50 Ω VDD 10 % 0 10 % Wave Form τ VDD PG. 90 % BVDSS VDS ID 90 % VDD ID IAS VGS(on) 10 % Data Sheet G14329EJ1V0DS00 tr td(off) td(on) ton tf toff µ PA1764 [MEMO] Data Sheet G14329EJ1V0DS00 3 µ PA1764 • The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. • No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. 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Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. M7 98. 8