DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1759 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE PACKAGE DRAWING (Unit : mm) DESCRIPTION This product is Dual N-channel MOS Field Effect Transistor designed for DC/DC converters. 8 5 1 ; Source 1 2 ; Gate 1 7, 8 ; Drain 1 FEATURES • Dual chip type 3 ; Source 2 4 ; Gate 2 5, 6 ; Drain 2 • Low on-resistance RDS(on)1 = 110 mΩ TYP. (VGS = 10 V, ID = 2.5 A) ORDERING INFORMATION PART NUMBER PACKAGE µPA1759G Power SOP8 4.4 5.37 Max. 0.8 +0.10 –0.05 0.05 Min. • Small and surface mount package (Power SOP8) 6.0 ±0.3 4 0.15 • Built-in G-S protection diode 1.8 Max. • Low input capacitance Ciss = 190 pF TYP. 1.44 1 RDS(on)2 = 170 mΩ TYP. (VGS = 4 V, ID = 2.5 A) 1.27 0.40 0.5 ±0.2 0.10 0.78 Max. +0.10 –0.05 0.12 M ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, All terminals are connected.) Drain to Source Voltage (VGS = 0) Gate to Source Voltage (VDS = 0) VDSS VGSS ±20 V V Drain Current (DC) ID(DC) ±5.0 A ID(pulse) PT ±20 1.7 A W PT 2.0 W Note1 Drain Current (pulse) Note2 Total Power Dissipation (1 unit) Total Power Dissipation (2 unit) Note2 60 Channel Temperature Tch 150 °C Storage Temperature Tstg –55 to + 150 °C Single Avalanche Current Note3 IAS 2.5 A Single Avalanche Energy Note3 EAS 0.625 mJ Notes 1. PW ≤ 10 µs, Duty cycle ≤ 1 % 2 2. Mounted on ceramic substrate of 1200 mm x 1.7 mm 3. Starting Tch = 25 °C, RG = 25 Ω, VGS = 20 V → 0 V Remark EQUIVALENT CIRCUIT (1/2 Circuit) Drain Body Diode Gate Gate Protection Diode Source The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. G13622EJ1V0DS00 (1st edition) Date Published May 1999 NS CP(K) Printed in Japan © 1999 µ PA1759 ELECTRICAL CHARACTERISTICS (TA = 25 °C, All terminals are connected.) CHARACTERISTICS SYMBOL Drain to Source On-state Resistance TEST CONDITIONS MIN. TYP. MAX. UNIT RDS(on)1 VGS = 10 V, ID = 2.5 A 110 150 mΩ RDS(on)2 VGS = 4 V, ID = 2.5 A 170 240 mΩ VGS(off) VDS = 10 V, ID = 1 mA 1.0 1.7 2.5 V Forward Transfer Admittance | yfs | VDS = 10 V, ID = 2.5 A 2.0 3.9 Drain Leakage Current IDSS VDS = 60 V, VGS = 0 V 10 µA Gate to Source Leakage Current IGSS VGS = ±20 V, VDS = 0 V ±10 µA Input Capacitance Ciss VDS = 10 V 190 pF Output Capacitance Coss VGS = 0 V 100 pF Reverse Transfer Capacitance Crss f = 1 MHz 36 pF Turn-on Delay Time td(on) ID = 2.5 A 6 ns VGS(on) = 10 V 50 ns td(off) VDD = 15 V 80 ns tf RG = 10 Ω 50 ns Total Gate Charge QG ID = 5.0 A 8 nC Gate to Source Charge QGS VDD = 24 V 1 nC Gate to Drain Charge QGD VGS = 10 V 2.4 nC VF(S-D) IF = 5.0 A, VGS = 0 V 0.9 V Reverse Recovery Time trr IF = 5.0 A, VGS = 0 V 40 ns Reverse Recovery Charge Qrr di/dt = 100 A/µs 50 nC Gate to Source Cut-off Voltage Rise Time tr Turn-off Delay Time Fall Time Body Diode forward Voltage TEST CIRCUIT 1 AVALANCHE CAPABILITY D.U.T. RG = 25 Ω PG. VGS = 20 → 0 V TEST CIRCUIT 2 SWITCHING TIME D.U.T. L 50 Ω S VGS RL RG RG = 10 Ω PG. VDD VGS Wave Form 0 VGS(on) 10 % 90 % VDD ID 90 % 90 % IAS ID VGS 0 BVDSS ID VDS ID τ VDD Starting Tch τ = 1 µs Duty Cycle ≤ 1 % TEST CIRCUIT 3 GATE CHARGE D.U.T. IG = 2 mA PG. 2 50 Ω 0 10 % 10 % Wave Form RL VDD Data Sheet G13622EJ1V0DS00 td(on) tr ton td(off) tf toff µ PA1759 [MEMO] Data Sheet G13622EJ1V0DS00 3 µ PA1759 • The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. • No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. • NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. • Descriptions of circuits, software, and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software, and information in the design of the customer's equipment shall be done under the full responsibility of the customer. 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Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. M7 98. 8