PRELIMINARY PRODUCT INFORMATION MOS FIELD EFFECT TRANSISTOR NP55N06CLD,NP55N06DLD,NP55N06ELD SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION This product is N-Channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION FEATURES • Channel Temperature 175 degree rated • Super Low On-state Resistance RDS(on)1 = 17 mΩ (MAX.) (VGS = 10 V, ID = 28 A) RDS(on)2 = 23 mΩ (MAX.) (VGS = 5 V, ID = 28 A) • Low Ciss : Ciss = 1920 pF (TYP.) PART NUMBER PACKAGE NP55N06CLD TO-220AB NP55N06DLD TO-262 NP55N06ELD TO-263 • Built-in Gate protection diode ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) Drain to Source Voltage VDSS 60 V Gate to Source Voltage VGSS ±20 V Drain Current (DC) ID(DC) ±55 A ID(pulse) ±165 A Total Power Dissipation (TA = 25 °C) PT 1.8 W Total Power Dissipation (Tch = 25 °C) PT 77 W Single Avalanche Current IAS TBD A EAS TBD mJ Channel Temperature Tch 175 °C Storage Temperature Tstg –55 to + 175 °C Drain Current (Pulse) Note1 Single Avalanche Energy Note2 Notes 1. PW ≤ 10 µs, Duty cycle ≤ 1 % 2. Starting Tch = 25 °C, RG = 25 Ω, VGS = 20 V →0 THERMAL RESISTANCE Channel to Case Rth(ch-C) 1.95 °C/W Channel to Ambient Rth(ch-A) 83.3 °C/W The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. The information contained in this document is being issued in advance of the production cycle for the device. The parameters for the device may change before final production or NEC Corporation, at its own discretion, may withdraw the device prior to its production. Document No. D13792EJ2V0PM00 (2nd edition) Date Published January 1999 NS CP(K) Printed in Japan © 1998 NP55N06CLD,NP55N06DLD,NP55N06ELD ELECTRICAL CHRACTERISTICS (TA = 25 °C) CHARACTERISTICS SYMBOL Drain to Source On-state Resistance Gate to Source Cut-off Voltage TEST CONDITIONS MIN. TYP. MAX. UNIT RDS(on)1 VGS = 10 V, ID = 28 A 13 17 mΩ RDS(on)2 VGS = 5 V, ID = 28 A 17 23 mΩ RDS(on)3 VGS = 4 V, ID = 28 A 20 27 mΩ VGS(off) VDS = 10 V, ID = 250 µA 1.0 1.5 2.0 V 13 42 Forward Transfer Admittance | yfs | VDS = 10 V, ID = 28 A Drain Leakage Current IDSS VDS = 60 V, VGS = 0 V 10 µA Gate to Source Leakage Current IGSS VGS = ±20 V, VDS = 0 V ±10 µA Input Capacitance Ciss VDS = 25 V, VGS = 0 V, f = 1 MHz 1920 2880 pF Output Capacitance Coss 380 570 pF Reverse Transfer Capacitance Crss 140 250 pF Turn-on Delay Time td(on) ID = 28 A, VGS(on) = 10 V, VDD = 30 V, 35 80 ns RG = 10 Ω 440 1100 ns td(off) 110 220 ns tf 230 500 ns Rise Time tr Turn-off Delay Time Fall Time S Total Gate Charge 1 QG1 ID = 55 A, VDD = 48 V, VGS = 10 V 44 66 nC Total Gate Charge 2 QG2 ID = 55 A, VDD = 48 V, VGS = 5 V 25 38 nC Gate to Source Charge QGS 8 nC Gate to Drain Charge QGD 13 nC IF = 55 A, VGS = 0 V 1.0 V IF = 55 A, VGS = 0 V, di/dt = 100 A/µs 60 ns 100 nC Body Diode Forward Voltage VF(S-D) Reverse Recovery Time trr Reverse Recovery Charge Qrr TEST CIRCUIT 2 GATE CHARGE TEST CIRCUIT 1 SWITCHING TIME D.U.T. IG = 2 mA D.U.T. VGS RL VGS PG. RG RG = 10 Ω Wave Form 0 VGS (on) 10 % 90 % PG. VDD 90 % ID 90 % ID VGS 0 I D Wave Form t t = 1µ s Duty Cycle ≤ 1 % 2 0 10 % 10 % tr td (on) ton td (off) tf toff Preliminary Product Information D13792EJ2V0PM00 50 Ω RL VDD NP55N06CLD,NP55N06DLD,NP55N06ELD PACKAGE DRAWINGS (Unit : mm) 1. TO-220AB (MP-25) 4.8 MAX. 1.3±0.2 15.5 MAX. 5.9 MIN. 1 1.3±0.2 1.3±0.2 0.75±0.1 2.54 12.7 MIN. 6.0 MAX. 1 2 3 0.5±0.2 1.3±0.2 4 10.0 4 4.8 MAX. 0.75±0.3 2.54 2.8±0.2 2.54 1.Gate 2.Drain 3.Source 4.Fin (Drain) 2 3 8.5±0.2 3.6±0.2 10 12.7 MIN. 3.0±0.3 10.6 MAX. 1.0±0.5 2. TO-262 (MP-25 Fin Cut) 0.5±0.2 2.8±0.2 2.54 1.Gate 2.Drain 3.Source 4.Fin (Drain) 3. TO-263 (JEDEC type : MP-25ZJ) 4.8 MAX. (10.0) 1.3±0.2 1.4±0.2 0.7±0.2 2 ) .5R (0 ) .8R (0 0.5±0.2 3 2.8±0.2 (2.54) 1 (2.54) 5.7±0.4 8.5±0.2 1.0±0.5 4 1.Gate 2.Drain 3.Source 4.Fin (Drain) Preliminary Product Information D13792EJ2V0PM00 3 NP55N06CLD,NP55N06DLD,NP55N06ELD No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC’s Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. Anti-radioactive design is not implemented in this product. M4 96. 5