DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3663 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING PACKAGE DRAWING (Unit: mm) DESCRIPTION The 2SK3663 is a switching device which can be driven directly by a 2.5 V power source. The 2SK3663 features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. FEATURES • 2.5 V drive available • Low on-state resistance RDS(on)1 = 0.57 Ω MAX. (VGS = 4.5 V, ID = 0.30 A) RDS(on)2 = 0.60 Ω MAX. (VGS = 4.0 V, ID = 0.30 A) RDS(on)3 = 0.88 Ω MAX. (VGS = 2.5 V, ID = 0.15 A) ORDERING INFORMATION PART NUMBER PACKAGE 2SK3663 SC-70 (SSP) Remark Marking : G26 ABSOLUTE MAXIMUM RATINGS (TA = 25°C) EQUIVALENT CIRCUIT Drain to Source Voltage (VGS = 0 V) VDSS 20 V Gate to Source Voltage (VDS = 0 V) VGSS ±12 V Drain Current (DC) ID (DC) ±0.5 A ID (pulse) ±2.0 A PT 0.2 W Channel Temperature Tch 150 °C Storage Temperature Tstg −55 to +150 °C Drain Current (pulse) Note1 Total Power Dissipation Note2 Drain Body Diode Gate Gate Protection Diode Source Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1% 2 2. Mounted on FR-4 board of 2500 mm x 1.1 mm Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. D16529EJ1V0DS00 (1st edition) Date Published January 2003 NS CP(K) Printed in Japan 2003 2SK3663 ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Zero Gate Voltage Drain Current IDSS VDS = 20 V, VGS = 0 V 1.0 µA Gate Leakage Current IGSS VGS = ±12 V, VDS = 0 V ±10 µA VGS(off) VDS = 10 V, ID = 1.0 mA 0.5 1.0 1.5 V | yfs | VDS = 10 V, ID = 0.30 A 0.25 0.75 RDS(on)1 VGS = 4.5 V, ID = 0.30 A 0.38 0.57 Ω RDS(on)2 VGS = 4.0 V, ID = 0.30 A 0.41 0.60 Ω RDS(on)3 VGS = 2.5 V, ID = 0.15 A 0.60 0.88 Ω Note Gate Cut-off Voltage Forward Transfer AdmittanceNote Note Drain to Source On-state Resistance S Input Capacitance Ciss VDS = 10 V 28 pF Output Capacitance Coss VGS = 0 V 11 pF Reverse Transfer Capacitance Crss f = 1.0 MHz 7 pF Turn-on Delay Time td(on) VDD = 10 V, ID = 0.30 A 20 ns tr VGS = 4.0 V 51 ns td off) RG = 10 Ω 94 ns 87 ns 0.87 V Rise Time Turn-off Delay Time Fall Time tf Body Diode Forward Voltage VF(S-D) IF = 0.5 A, VGS = 0 V Note Pulsed : PW≤350 µs, Duty Cycle≤2% TEST CIRCUIT SWITCHING TIME D.U.T. VGS RL VGS RG PG. Wave Form VDD 0 VGS 10% 90% VDS 90% VGS 0 VDS τ τ = 1 µs Duty Cycle ≤ 1% 2 90% VDS 10% 0 10% Wave Form td(on) tr ton td(off) tf toff Data Sheet D16529EJ1V0DS 2SK3663 DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 0.24 PT - Total Power Dissipation - W dT - Percentage of Rated Power - % 120 100 80 60 40 20 0.2 0.16 0.12 0.08 Mounted on FR-4 board of 2 2500 mm x 1.1 mm 0.04 0 0 0 25 50 75 100 125 150 0 175 25 TA - Ambient Temperature - °C DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 100 125 150 175 10 V DS = 10 V Pulsed Pulsed VGS = 4.5 V 1.6 1 ID - Drain Current - A ID - Drain Current - A 75 FORWARD TRANSFER CHARACTERISTICS 2 4.0 V 1.2 2.5 V 0.8 0.4 0.1 T A = 125°C 75°C 25°C −25°C 0.01 0.001 0 0.0001 0 0.4 0.8 1.2 1.6 0.5 1 1.5 2 2.5 VGS - Gate to Source Voltage - V GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT | yfs | - Forward Transfer Admittance - S VDS = 10 V ID = 1.0 mA 1.2 1 0.8 0.6 0.4 -50 0 VDS - Drain to Source Voltage - V 1.4 VGS(off) -Gate Cut-off Voltage - V 50 TA - Ambient Temperature - °C 0 50 100 150 Tch - Channel Temperature - °C 10 3 VDS = 10 V Pulsed 1 TA = −25°C 25°C 75°C 125°C 0.1 0.01 0.001 0.01 0.1 1 10 ID - Drain Current - A Data Sheet D16529EJ1V0DS 3 2SK3663 1.2 Pulsed 1 VGS = 2.5 V, ID = 0.15 A 0.8 0.6 0.4 VGS = 4.0 V, ID = 0.30 A VGS = 4.5 V, ID = 0.30 A 0.2 0 -50 0 50 100 150 Tch - Channel Temperature - °C DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 1.2 RDS(on) - Drain to Source On-state Resistance - Ω RDS(on) - Drain to Source On-state Resistance - Ω DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE ID = 0.30 A 0.8 0.6 0.4 0.2 0 0 VGS = 4.5 V Pulsed 1 TA = 125°C 75°C 0.6 0.4 25°C −25°C 0 0.01 0.1 1 4 10 1 TA = 125°C 0.8 75°C 0.6 0.4 25°C 0.2 −25°C 0 0.01 0.1 Ciss, Coss, Crss - Capacitance - pF RDS(on) - Drain to Source On-state Resistance - Ω TA = 125°C 75° 10 0.6 0.4 25°C −25°C VGS = 0 V f = 1.0 MHz Ciss 10 Coss Crss 1 0.1 1 10 0.1 1 10 VDS - Drain to Source Voltage - V ID - Drain Current - A 4 1 CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 100 0.8 0 0.01 12 ID - Drain Current - A VGS = 2.5 V Pulsed 0.2 10 VGS = 4.0 V Pulsed DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 1 8 1.2 ID - Drain Current - A 1.2 6 DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT RDS(on) - Drain to Source On-state Resistance - Ω RDS(on) - Drain to Source On-state Resistance - Ω 1.2 0.2 2 VGS - Gate to Source Voltage - V DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 0.8 Pulsed 1 Data Sheet D16529EJ1V0DS 100 2SK3663 SWITCHING CHARACTERISTICS SOURCE TO DRAIN DIODE FORWARD VOLTAGE 10 VDD = 10 V VGS = 4.0 V RG = 10 Ω VGS = 0 V Pulsed IF – Diode Forward Current - A td(on), tr, td(off), tf - Switching Time - ns 1000 td(off) 100 tf tr td(on) 10 0.01 1 0.1 0.01 0.001 0.1 1 10 ID - Drain Current - A 0.4 0.6 0.8 1 1.2 1.4 VF (S-D) - Source to Drain Voltage - V Data Sheet D16529EJ1V0DS 5 2SK3663 • The information in this document is current as of January, 2003. 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