DATA SHEET JUNCTION FIELD EFFECT TRANSISTOR 2SK3717 N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM PACKAGE DRAWING (Unit: mm) FEATURES 1 • Compact package 2.0 ±0.2 3.0 ±0.2 4.0 ±0.2 The 2SK3717 is suitable for converter of ECM. 2 3 0.6 TYP. 0.50 TYP. 1.0 TYP. DESCRIPTION • High forward transfer admittance 0.45 TYP. 0.42 TYP. 12.5 MIN. 1400 µS TYP. (IDSS = 250 µA) • Includes diode and high resistance at G-S ORDERING INFORMATION PACKAGE 2SK3717 SC-72 (SST) 1.27 TYP. 1.27 TYP. 1.35 TYP. PART NUMBER EQUIVALENT CIRCUIT 3 ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = −1.0 V) VDSX 20 V Gate to Drain Voltage VGDO −20 V Drain Current ID 10 mA Gate Current IG 10 mA Total Power Dissipation PT 100 mW Junction Temperature Tj 125 °C Storage Temperature Tstg −55 to +125 °C 2 1 1: Source 2: Gate 3: Drain Caution Please take care of ESD (Electro Static Discharge) when you handle the device in this document. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. D16785EJ1V0DS00 (1st edition) Date Published July 2003 NS CP(K) Printed in Japan 2003 2SK3717 ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTICS SYMBOL Zero Gate Voltage Drain Cut-off Current TEST CONDITIONS MIN. TYP. MAX. UNIT 150 250 430 µA −0.4 −1.0 V IDSS VDS = 5.0 V, VGS = 0 V Gate Cut-off Voltage VGS(off) VDS = 5.0 V, ID = 1.0 µA Forward Transfer Admittance | yfs1 | VDS = 5.0 V, ID = 30 µA, f = 1.0 kHz 150 440 µS | yfs2 | VDS = 5.0 V, VGS = 0 V, f = 1.0 kHz 600 1400 µS Input Capacitance Ciss VDS = 5.0 V, VGS = 0 V, f = 1.0 MHz 3.9 pF Noise Voltage NV Refer to NOISE VOLTAGE TEST 1.3 CIRCUIT IDSS CLASSIFICATION MARKING F H J IDSS (µA) 150 to 240 210 to 350 320 to 430 NOISE VOLTAGE TEST CIRCUIT +4.5 V R = 1.0 kΩ JIS A NV (r.m.s) C = 10 pF 2 Data Sheet D16785EJ1V0DS 3.0 µV 2SK3717 TYPICAL CHARACTERISTICS (TA = 25°C) DRAIN FACTOR OF POWER DISSIPATION DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 1000 100 ID - Drain Current - µA dT - Derating Factor - % 120 80 60 40 800 VGS = 0.2 V 600 0.1 V 400 0V −0.1 V 200 20 −0.3 V −0.2 V 0 0 0 25 50 75 100 125 150 175 0 2 4 6 8 TA - Ambient Temperature - °C VDS - Drain to Source Voltage - V GATE TO SOURCE CURRENT vs. GATE TO SOURCE VOLTAGE DRAIN CURRENT vs. GATE TO SOURCE VOLTAGE 10 1600 IGS - Gate to Source Current - µA 40 VDS = 5.0 V 1400 20 10 -0.6 −0.4 −0.2 −0.8 −0.6 0 0.2 0.4 0.6 0.8 −10 −20 ID - Drain Current - µA 30 1200 1000 800 600 400 200 −30 −40 0 -0.8 -0.6 -0.4 -0.2 VGS - Gate to Source Voltage - V 0 0.2 0.4 0.6 0.8 1 VGS - Gate to Source Voltage - V INPUT CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE FORWARD TRANSFER ADMITTANCE AND GATE CUT-OFF VOLTAGE vs. ZERO GATE VOLTAGE DRAIN CURRENT 10 Ciss - Input Capacitance - pF 1 1 10 100 | yfs | - Forward Transfer Admittance - mS VGS(off) - Gate Cut-off Voltage - V 10 VGS = 0 V f = 1.0 MHz VDS = 5.0 V | yfs | 1 VGS(off) 0.1 100 1000 IDSS - Zero Gate Voltage Drain Current - µA VDS - Drain to Source Voltage - V Data Sheet D16785EJ1V0DS 3 2SK3717 • The information in this document is current as of July, 2003. 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