DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3812 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION The 2SK3812 is N-channel MOS Field Effect Transistor designed for high current switching applications. PART NUMBER PACKAGE 2SK3812-ZP TO-263 (MP-25ZP) FEATURES • Super low on-state resistance RDS(on)1 = 2.8 mΩ MAX. (VGS = 10 V, ID = 55 A) RDS(on)2 = 3.7 mΩ MAX. (VGS = 4.5 V, ID = 55 A) • High current rating: ID(DC) = ±110 A ABSOLUTE MAXIMUM RATINGS (TA = 25°C) (TO-263) Drain to Source Voltage (VGS = 0 V) VDSS 60 V Gate to Source Voltage (VDS = 0 V) VGSS ±20 V Drain Current (DC) (TC = 25°C) ID(DC) ±110 A ID(pulse) ±440 A Total Power Dissipation (TC = 25°C) PT1 213 W Total Power Dissipation (TA = 25°C) PT2 1.5 W Channel Temperature Tch 150 °C Tstg −55 to +150 °C Drain Current (pulse) Note1 Storage Temperature Single Avalanche Energy Note2 EAS 397 mJ Repetitive Avalanche Current Note3 IAR 63 A Repetitive Avalanche Energy Note3 EAR 397 mJ Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1% 2. Starting Tch = 25°C, VDD = 30 V, RG = 25 Ω, VGS = 20 → 0 V, L = 100 µH 3. Tch(peak) ≤ 150°C, RG = 25 Ω The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. D16738EJ1V0DS00 (1st edition) Date Published September 2004 NS CP(K) Printed in Japan 2004 2SK3812 ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Zero Gate Voltage Drain Current IDSS VDS = 60 V, VGS = 0 V 10 µA Gate Leakage Current IGSS VGS = ±20 V, VDS = 0 V ±100 nA VGS(off) VDS = 10 V, ID = 1 mA 1.5 2.0 2.5 V | yfs | VDS = 10 V, ID = 55 A 50 110 RDS(on)1 VGS = 10 V, ID = 55 A 2.3 2.8 mΩ RDS(on)2 VGS = 4.5 V, ID = 55 A 2.6 3.7 mΩ Gate Cut-off Voltage Forward Transfer Admittance Note Drain to Source On-state Resistance Note S Input Capacitance Ciss VDS = 10 V 16800 pF Output Capacitance Coss VGS = 0 V 1600 pF Reverse Transfer Capacitance Crss f = 1 MHz 1000 pF Turn-on Delay Time td(on) VDD = 30 V, ID = 55 A 42 ns VGS = 10 V 160 ns RG = 0 Ω 140 ns 15 ns Rise Time tr Turn-off Delay Time td(off) Fall Time tf Total Gate Charge QG VDD = 48 V 250 nC Gate to Source Charge QGS VGS = 10 V 41 nC QGD ID = 110 A 66 nC Gate to Drain Charge Body Diode Forward Voltage Note VF(S-D) IF = 110 A, VGS = 0 V 0.87 Reverse Recovery Time trr IF = 110 A, VGS = 0 V 53 ns Reverse Recovery Charge Qrr di/dt = 100 A/µs 74 nC 1.5 V Note Pulsed TEST CIRCUIT 1 AVALANCHE CAPABILITY D.U.T. RG = 25 Ω D.U.T. L 50 Ω PG. VGS = 20 → 0 V TEST CIRCUIT 2 SWITCHING TIME RL RG PG. VDD VGS VGS Wave Form 0 VGS 10% 90% VDD VDS 90% BVDSS IAS VDS ID VDS τ τ = 1 µs Duty Cycle ≤ 1% TEST CIRCUIT 3 GATE CHARGE D.U.T. IG = 2 mA PG. 2 50 Ω 0 10% 10% tr td(off) Wave Form VDD Starting Tch 90% VDS VGS 0 RL VDD Data Sheet D16738EJ1V0DS td(on) ton tf toff 2SK3812 TYPICAL CHARACTERISTICS (TA = 25°C) TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 250 120 PT - Total Power Dissipation - W dT - Percentage of Rated Power - % DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100 80 60 40 20 200 150 100 50 0 0 0 25 50 75 100 125 150 0 175 25 TC - Case Temperature - °C 50 75 100 125 150 175 TC - Case Temperature - °C FORWARD BIAS SAFE OPERATING AREA ID(pulse) RDS(on) Limited (at VGS = 10 V) PW =100 µs ID(DC) 100 Power Dissipation Limited 1 ms 10 10 ms 1 TC = 25°C Single pulse 0.1 0.1 1 10 100 VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH rth(ch-A) - Transient Thermal Resistance - °C/W ID - Drain Current - A 1000 1000 Rth(ch-A) = 83.3°C/W 100 10 1 Rth(ch-C) = 0.587°C/W 0.1 0.01 Single pulse 0.001 100 µ 1m 10 m 100 m 1 10 100 1000 PW - Pulse Width - s Data Sheet D16738EJ1V0DS 3 2SK3812 DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE FORWARD TRANSFER CHARACTERISTICS 1000 500 VDS = 10 V Pulsed Pulsed VGS = 10 V 300 ID - Drain Current - A ID - Drain Current - A 400 100 4.5 V 200 100 10 TA = 150°C 75°C 25°C −55°C 1 0.1 0.01 0 0.001 0 0.4 0.8 1.2 1 1.6 2 3 4 5 VDS - Drain to Source Voltage - V VGS - Gate to Source Voltage - V GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT | yfs | - Forward Transfer Admittance - S VGS(off) - Gate Cut-off Voltage - V 3.0 VDS = 10 V ID = 1 mA 2.5 2.0 1.5 1.0 0.5 0 -75 -25 25 75 125 1000 VDS = 10 V Pulsed TA = 150°C 75°C 25°C −55°C 100 10 1 0.1 175 1 6 Pulsed 5 4 2 10 V 1 0 1 10 100 1000 RDS(on) - Drain to Source On-state Resistance - mΩ RDS(on) - Drain to Source On-state Resistance - mΩ DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT VGS = 4.5 V 1000 DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE ID - Drain Current - A 4 100 ID - Drain Current - A Tch - Channel Temperature - °C 3 10 6 Pulsed 5 ID = 110 A 55 A 22 A 4 3 2 1 0 0 2 4 6 8 10 12 14 16 18 20 VGS - Gate to Source Voltage - V Data Sheet D16738EJ1V0DS DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 100000 6 Pulsed Ciss, Coss, Crss - Capacitance - pF 5 4 VGS = 4.5 V 3 10 V 2 1 VGS = 0 V f = 1 MHz Ciss 10000 Coss 1000 Crss 0 100 -75 -25 25 75 125 175 0.1 Tch - Channel Temperature - °C 100 DYNAMIC INPUT/OUTPUT CHARACTERISTICS 1000 12 60 VDS - Drain to Source Voltage - V td(on), tr, td(off), tf - Switching Time - ns 10 VDS - Drain to Source Voltage - V SWITCHING CHARACTERISTICS tr td(off) 100 td(on) tf 10 VDD = 30 V VGS = 10 V RG = 0 Ω ID = 110 A 50 10 VDD = 48 V 30 V 12 V 40 8 6 30 VGS 20 10 4 2 VDS 0 1 0.1 1 10 100 0 1000 50 100 150 200 250 0 300 QG - Gate Charge - nC ID - Drain Current - A SOURCE TO DRAIN DIODE FORWARD VOLTAGE REVERSE RECOVERY TIME vs. DIODE FORWARD CURRENT 1000 1000 VGS = 10 V 100 trr - Reverse Recovery Time - ns IF - Diode Forward Current - A 1 VGS - Gate to Source Voltage - V RDS(on) - Drain to Source On-state Resistance - mΩ 2SK3812 4.5 V 0V 10 1 di/dt = 100 A/µs VGS = 0 V 100 10 Pulsed 1 0.1 0 0.5 1 1.5 0.1 1 10 100 1000 IF - Diode Forward Current - A VF(S-D) - Source to Drain Voltage - V Data Sheet D16738EJ1V0DS 5 2SK3812 SINGLE AVALANCHE CURRENT vs. INDUCTIVE LOAD SINGLE AVALANCHE ENERGY DERATING FACTOR 100 Energy Derating Factor - % IAS - Single Avalanche Current - A 1000 IAS = 63 A 100 EAS = 397 mJ 10 VDD = 30 V RG = 25 Ω VGS = 20 → 0 V Starting Tch = 25°C 1 0.001 80 60 40 20 0 0.01 0.1 1 10 L - Inductive Load - mH 6 VDD = 30 V RG = 25 Ω VGS = 20 → 0 V IAS ≤ 63 A 25 50 75 100 125 150 Starting Tch - Starting Channel Temperature - °C Data Sheet D16738EJ1V0DS 2SK3812 PACKAGE DRAWING (Unit: mm) 1.35±0.3 TO-263 (MP-25ZP) 0.5 4.45±0.2 1.3±0.2 0.025 to 0.25 0.6± 0.75±0.2 0.2 0 to 2.54 2.54±0.25 9.15±0.3 8.0 TYP. 7.88 MIN. 4 15.25±0.5 10.0±0.3 No plating 8o 0.25 1 2 3 1. Gate 2. Drain 2.5 3. Source 4. Fin (Drain) EQUIVALENT CIRCUIT Drain Body Diode Gate Source Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred. Data Sheet D16738EJ1V0DS 7 2SK3812 • The information in this document is current as of September, 2004. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all products and/or types are available in every country. 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