DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3714 SWITCHING N-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION The 2SK3714 is N-channel MOS Field Effect Transistor designed for high current switching applications. PART NUMBER PACKAGE 2SK3714 Isolated TO-220 FEATURES • Super low on-state resistance (Isolated TO-220) R DS(on)1 = 13 mΩ MAX. (V GS = 10 V, I D = 25 A) R DS(on)2 = 22 mΩ MAX. (V GS = 4.0 V, I D = 25 A) • Low Ciss : C iss = 3200 pF TYP. • Built-in gate protection diode ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) VDSS 60 V Gate to Source Voltage (VDS = 0 V) VGSS ±20 V Drain Current (DC) (TC = 25°C) ID(DC) ±50 A ID(pulse) ±160 A Total Power Dissipation (TC = 25°C) PT1 35 W Total Power Dissipation (TA = 25°C) PT2 2.0 W Channel Temperature Tch 150 °C Tstg −55 to +150 °C IAS 31 A EAS 96 mJ Drain Current (pulse) Note1 Storage Temperature Single Avalanche Current Note2 Single Avalanche Energy Note2 Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1% 2. Starting Tch = 25°C, V DD = 30 V, RG = 25 Ω, VGS = 20 → 0 V The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. D16537EJ2V0DS00 (2nd edition) Date Published August 2003 NS CP(K) Printed in Japan The mark shows major revised points. 2003 2SK3714 ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Zero Gate Voltage Drain Current IDSS VDS = 60 V, VGS = 0 V 10 µA Gate Leakage Current IGSS VGS = ±20 V, VDS = 0 V ±10 µA 2.5 V Gate Cut-off Voltage Forward Transfer Admittance Note Drain to Source On-state Resistance Note VGS(off) VDS = 10 V, ID = 1 mA 1.5 2.0 | yfs | VDS = 10 V, ID = 25 A 17 34 RDS(on)1 VGS = 10 V, ID = 25 A 11 13 mΩ RDS(on)2 VGS = 4.0 V, ID = 25 A 16 22 mΩ S Input Capacitance Ciss VDS = 10 V 3200 pF Output Capacitance Coss VGS = 0 V 520 pF Reverse Transfer Capacitance Crss f = 1 MHz 260 pF Turn-on Delay Time td(on) VDD = 30 V, ID = 25 A 15 ns VGS = 10 V 10 ns RG = 0 Ω 58 ns 7 ns Rise Time tr Turn-off Delay Time td(off) Fall Time tf Total Gate Charge QG VDD = 48 V 60 nC Gate to Source Charge QGS VGS = 10 V 10 nC QGD ID = 50 A 16 nC Gate to Drain Charge Body Diode Forward Voltage Note VF(S-D) IF = 50 A, VGS = 0 V 0.94 Reverse Recovery Time trr IF = 50 A, VGS = 0 V 46 ns Reverse Recovery Charge Qrr di/dt = 100 A/µs 80 nC 1.5 V Note Pulsed TEST CIRCUIT 1 AVALANCHE CAPABILITY D.U.T. RG = 25 Ω D.U.T. L 50 Ω PG. VGS = 20 → 0 V TEST CIRCUIT 2 SWITCHING TIME RL RG PG. VDD VGS VGS Wave Form 0 VGS 10% 90% VDD VDS 90% IAS VDS ID VDS τ τ = 1 µs Duty Cycle ≤ 1% TEST CIRCUIT 3 GATE CHARGE D.U.T. IG = 2 mA PG. 2 50 Ω 0 10% 10% tr td(off) Wave Form VDD Starting Tch 90% VDS VGS 0 BVDSS RL VDD Data Sheet D16537EJ2V0DS td(on) ton tf toff 2SK3714 TYPICAL CHARACTERISTICS (T A = 25°C) TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 40 120 PT - Total Power Dissipation - W dT - Percentage of Rated Power - % DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100 80 60 40 20 30 20 10 0 0 0 25 50 75 100 125 150 175 0 25 50 75 100 125 150 175 TC - Case Temperature - °C TC - Case Temperature - °C FORWARD BIAS SAFE OPERATING AREA 1000 ID(pulse) PW = 100 µs 100 1 ms 10 ID(DC) DC 1 10 ms 0.1 Single pulse TC = 25°C 0.01 0.1 1 10 100 VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 100 rth(t) - Transient Thermal Resistance - °C/W ID - Drain Current - A RDS(on) Limited (at VGS = 10 V) Rth(ch-A) = 62.5°C/W 10 Rth(ch-C) = 3.57°C/W 1 0.1 Single pulse 0.01 100 µ 1m 10 m 100 m 1 10 100 1000 PW - Pulse Width - s Data Sheet D16537EJ2V0DS 3 2SK3714 DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE FORWARD TRANSFER CHARACTERISTICS 1000 Pulsed 80 ID - Drain Current - A ID - Drain Current - A 100 60 VGS =10 V 40 4.0 V 100 TA = –40˚C 25˚C 75˚C 150˚C 10 1 20 Pulsed 0 0 0.4 0.2 0.1 0.8 0.6 1 VGS(off) - Gate Cut-off Voltage - V 3.0 VDS = 10 V ID = 1 mA 2.0 1.5 1.0 0.5 −50 0 50 100 10 TA = 150˚C 75˚C 25˚C –40˚C 1 0.1 0.01 0.01 150 VGS = 4.0 V 10 V 1 10 100 ID - Drain Current - A 1000 RDS(on) - Drain to Source On-state Resistance - mΩ RDS(on) - Drain to Source On-state Resistance - mΩ 4 30 0 0.1 1 10 100 ID - Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 40 Pulsed 10 VDS = 10 V 5 6 100 VDS = 10 V Pulsed Tch - Channel Temperature - °C 20 4 FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT | yfs | - Forward Transfer Admittance - S GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE 0 3 VGS - Gate to Source Voltage - V VDS - Drain to Source Voltage - V 2.5 2 DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 50 Pulsed Data Sheet D16537EJ2V0DS 40 30 20 ID = 40 A 10 0 0 5 10 15 VGS - Gate to Source Voltage - V 20 DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 40 Pulsed VGS = 4.0 V 10 V 20 10 10000 ID = 40 A 0 −50 50 0 100 Ciss 1000 Coss 100 Crss 10 0.1 150 10 100 VDS - Drain to Source Voltage - V DYNAMIC INPUT/OUTPUT CHARACTERISTICS 1000 50 100 VDS - Drain to Source Voltage - V VDD = 30 V VGS = 10 V RG = 0 Ω td(off) td(on) 10 tr tf 10 ID = 50 A Pulsed VDD = 48 V 30 V 12 V 45 40 9 8 35 7 30 6 25 5 VGS 20 4 15 3 10 2 VDS 5 1 1 0 0.1 1 10 100 0 0 ID - Drain Current - A 100 30 40 50 1000 Pulsed VGS = 10 V 10 VGS = 0 V 1 0.1 0 20 0.5 1.0 60 70 80 REVERSE RECOVERY TIME vs. DIODE FORWARD CURRENT trr - Reverse Recovery Time - ns 1000 10 QG - Gate Charge - nC SOURCE TO DRAIN DIODE FORWARD VOLTAGE IF - Diode Forward Current - A 1 Tch - Channel Temperature - °C SWITCHING CHARACTERISTICS td(on), tr, td(off), tf - Switching Time - ns VGS = 0 V f = 1 MHz VGS - Gate to Source Voltage - V 30 CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE Ciss, Coss, Crss - Capacitance - pF RDS(on) - Drain to Source On-state Resistance - mΩ 2SK3714 di/dt = 100 A/µs VGS = 0 V 100 1.5 10 1 0.1 1 10 100 IF - Diode Forward Current - A VF(S-D) - Source to Drain Voltage - V Data Sheet D16537EJ2V0DS 5 2SK3714 SINGLE AVALANCHE CURRENT vs. INDUCTIVE LOAD SINGLE AVALANCHE ENERGY DERATING FACTOR 160 IAS = 31 A EAS 10 =9 Energy Derating Factor - % IAS - Single Avalanche Current - A 100 6m J 1 VDD = 30 V RG = 25 Ω VGS = 20 → 0 V 0.1 10 µ 100 µ 140 120 100 80 60 40 20 1m 10 m L - Inductive Load - H 6 VDD = 30 V RG = 25 Ω VGS = 20 → 0 V IAS ≤ 31 A 0 25 50 75 100 125 150 Starting Tch - Starting Channel Temperature - °C Data Sheet D16537EJ2V0DS 2SK3714 PACKAGE DRAWING (Unit: mm) Isolated TO-220 (MP-45F) 4.5 ±0.2 4 ±0.2 0.7 ±0.1 2.7 ±0.2 12.0 ±0.2 3 ±0.1 φ 3.2 ±0.2 13.5 MIN. 15.0 ±0.3 10.0 ±0.3 2.5 ±0.1 1.3 ±0.2 1.5 ±0.2 2.54 2.54 0.65 ±0.1 1. Gate 2. Drain 3. Source 1 2 3 EQUIVALENT CIRCUIT Drain Body Diode Gate Gate Protection Diode Source Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. Data Sheet D16537EJ2V0DS 7 2SK3714 • The information in this document is current as of August, 2003. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. • No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Electronics. 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