DATA SHEET JUNCTION FIELD EFFECT TRANSISTOR 2SK4028 N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM DESCRIPTION PACKAGE DRAWING (Unit: mm) The 2SK4028 is suitable for converter of ECM. 1.2 ±0.1 +0.1 0.3 –0.05 MAX. 0.33 FEATURES • High gain • Low noise −115 dB (VDD = 2.0 V, C = 5 pF, RL = 2.2 kΩ) 3 0.8 ±0.1 1.2 ±0.1 −1.0 dB (VDD = 2.0 V, C = 5 pF, RL = 2.2 kΩ) 0 to 0.02 2 1 • Ultra thin thickness package 0.4 t = 0.3 mm TYP. +0.1 0.13 –0.05 0.4 ORDERING INFORMATION PART NUMBER PACKAGE 2SK4028 3pXSOF03 (0812) 0.2 +0.1 –0 ABSOLUTE MAXIMUM RATINGS (TA = 25°C) EQUIVALENT CIRCUIT Drain to Source Voltage (VGS = −1.0 V) VDSX 20 V Gate to Drain Voltage VGDO −20 V Drain Current ID 10 mA Gate Current IG 10 mA Total Power Dissipation PT 100 mW Junction Temperature Tj 125 °C Storage Temperature Tstg −55 to +125 °C 2 3 1 1: Source 2: Drain 3: Gate Caution Please take care of ESD (Electro Static Discharge) when you handle the device in this document. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. D17529EJ1V0DS00 (1st edition) Date Published April 2005 NS CP(K) Printed in Japan 2005 2SK4028 ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTICS SYMBOL Zero Gate Voltage Drain Cut-off Current TEST CONDITIONS MIN. TYP. MAX. UNIT 90 250 430 µA −0.37 −1.0 V IDSS VDS = 2.0 V, VGS = 0 V Gate Cut-off Voltage VGS(off) VDS = 2.0 V, ID = 1.0 µA Forward Transfer Admittance | yfs1 | VDS = 2.0 V, ID = 30 µA, f = 1.0 kHz 320 470 µS | yfs2 | VDS = 2.0 V, VGS = 0 V, f = 1.0 kHz 800 1600 µS Input Capacitance Ciss VDS = 2.0 V, VGS = 0 V, f = 1.0 MHz 4.0 pF Voltage Gain GV VDD = 2.0 V, C = 5 pF, RL = 2.2 kΩ, −1.0 dB −115 dB VIN = 10 mV, f = 1 kHz Noise Voltage NV VDD = 2.0 V, C = 5 pF, RL = 2.2 kΩ, A-curve IDSS CLASSIFICATION MARKING DE DF DH DJ IDSS (µA) 90 to 180 150 to 240 210 to 350 320 to 430 GAIN TEST CIRCUIT VDD RL Out C NOISE VOLTAGE TEST CIRCUIT VDD RL JIS A NV (r.m.s) C 2 Data Sheet D17529EJ1V0DS 2SK4028 TYPICAL CHARACTERISTICS (TA = 25°C) DERATING FACTOR OF POWER DISSIPATION DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 1000 Pulsed 0.20 V 100 ID - Drain Current - µA dT - Derating Factor - % 120 80 60 40 800 0.15 V 0.10 V 600 0.05 V 400 −0.05 V 200 20 VGS = 0 V 0 0 0 25 50 75 100 125 150 0 175 2 4 6 8 10 VDS - Drain to Source Voltage - V TA - Ambient Temperature - °C GATE TO SOURCE CURRENT vs. GATE TO SOURCE VOLTAGE DRAIN CURRENT vs. GATE TO SOURCE VOLTAGE IGS - Gate to Source Current - µA 40 ID - Drain Current - µA 30 20 10 −0.8 −0.6 −0.4 −0.2 0 0.2 0.4 0.6 0.8 −10 −20 −30 −40 VGS - Gate to Source Voltage - V VGS - Gate to Source Voltage - V INPUT CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE Ciss - Input Capacitance - pF VGS = 0 V f = 1.0 MHz 1 1 10 100 10 | yfs | - Forward Transfer Admittance - mS VGS(off) - Gate Cut-off Voltage - V 10 FORWARD TRANSFER ADMITTANCE AND GATE CUT-OFF VOLTAGE vs. ZERO GATE VOLTAGE DRAIN CURRENT VDS = 2.0 V | yfs | 1 VGS(off) 0.1 VDS - Drain to Source Voltage - V 10 100 1000 IDSS - Zero Gate Voltage Drain Current - µA Data Sheet D17529EJ1V0DS 3 2SK4028 VOLTAGE GAIN vs. DRAIN CURRENT NOISE VOLTAGE vs. DRAIN CURRENT 2 -110 GV - Voltage Gain - dB 1 0 -1 NV - Noise Voltage - dB VDD = 2.0 V C = 5 pF RL = 2.2 kΩ VIN = 10 mV f = 1 kHz -2 -3 -4 -112 -114 -116 -118 -120 -5 10 100 1000 10 100 IDSS - Drain Current - µA IDSS - Drain Current - µA 4 VDD = 2.0 V C = 5 pF RL = 2.2 kΩ Data Sheet D17529EJ1V0DS 1000 2SK4028 • The information in this document is current as of April, 2005. 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