DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK4035 SWITCHING N-CHANNEL POWER MOSFET PACKAGE DRAWING (Unit: mm) DESCRIPTION 0.16 +0.1 –0.06 +0.1 0.65 –0.15 0.4 +0.1 –0.05 3 1.5 2.8 ±0.2 2SK4035 is the best switching element for the DC-DC converter usage from 24 to 48 V in the direct current input voltage. It excels in the switching characteristics in low on-state resistance and because it is the small size surface mounting externals, is the best for the high-speed switching usage of the equipment that promotes the automation of space-saving and mounting. 0 to 0.1 1 2 FEATURES • Low input capacitance Ciss = 74 pF TYP. • Low on-state resistance RDS(on) = 4.5 Ω MAX. (VGS = 10 V, ID = 0.25 A) • Small and surface mount package (SC-96) 0.95 0.65 0.95 1.9 0.9 to 1.1 2.9 ±0.2 1. Gate 2. Source 3. Drain ORDERING INFORMATION PART NUMBER 2SK4035 2SK4035-A Note PACKAGE SC-96 (Mini Mold Thin Type) SC-96 (Mini Mold Thin Type) EQUIVALENT CIRCUIT Note Pb-free (This product does not contain Pb in external electrode and other parts.) Drain Marking: XP ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TA = 25°C) Note1 Drain Current (pulse) Total Power Dissipation (TA = 25°C) Note2 Total Power Dissipation (TA = 25°C) Channel Temperature Storage Temperature VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg 250 ±30 ±0.5 ±2.0 0.2 1.25 150 −55 to +150 V V A A W W °C °C Body Diode Gate Gate Protection Diode Source Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1% 2. Mounted on FR-4 board of 50 mm x 50 mm x 1.6 mm, t ≤ 5 sec Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. D17447EJ1V0DS00 (1st edition) Date Published July 2005 NS CP(K) Printed in Japan 2005 2SK4035 ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Zero Gate Voltage Drain Current IDSS VDS = 250 V, VGS = 0 V 10 µA Gate Leakage Current IGSS VGS = ±30 V, VDS = 0 V ±10 µA VGS(off) VDS = 10 V, ID = 1.0 mA 2.5 3.5 4.5 V | yfs | VDS = 10 V, ID = 0.25 A 0.2 0.5 RDS(on) VGS = 10 V, ID = 0.25 A 3.2 Gate Cut-off Voltage Forward Transfer Admittance Note Drain to Source On-state Resistance Note S 4.5 Ω Input Capacitance Ciss VDS = 10 V 74 pF Output Capacitance Coss VGS = 0 V 16 pF Reverse Transfer Capacitance Crss f = 1.0 MHz 7 pF Turn-on Delay Time td(on) VDD = 125 V, ID = 0.25 A 7 ns tr VGS = 10 V 5 ns td(off) RG = 10 Ω 12 ns 40 ns 4 nC Rise Time Turn-off Delay Time Fall Time tf Total Gate Charge QG VDD = 200 V Gate to Source Charge QGS VGS = 10 V 0.9 nC QGD ID = 0.5 A 2 nC Gate to Drain Charge Body Diode Forward Voltage Note VF(S-D) IF = 0.5 A, VGS = 0 V 0.84 V Reverse Recovery Time trr IF = 0.5 A, VGS = 0 V 42 ns Reverse Recovery Charge Qrr di/dt = 100 A/µs 57 nC Note Pulsed TEST CIRCUIT 1 SWITCHING TIME TEST CIRCUIT 2 GATE CHARGE D.U.T. D.U.T. VGS RL VGS RG PG. Wave Form VDD 0 VGS 10% PG. 90% τ τ = 1 µs Duty Cycle ≤ 1% 2 90% VDS VDS 0 10% 10% tr td(off) Wave Form td(on) ton RL 50 Ω VDD 90% VDS VGS 0 IG = 2 mA tf toff Data Sheet D17447EJ1V0DS 2SK4035 TYPICAL CHARACTERISTICS (TA = 25°C) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 120 1.4 PT - Total Power Dissipation - W dT - Percentage of Rated Power - % DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100 80 60 40 20 Mounted on FR-4 board of 50 mm x 50 mm x 1.6 mm, t ≤ 5 sec 1.2 1 0.8 0.6 0.4 0.2 0 0 0 25 50 75 100 125 150 175 0 TA - Ambient Temperature - °C 25 50 75 100 125 150 175 TA - Ambient Temperature - °C FORWARD BIAS SAFE OPERATING AREA 10 s m ID(DC) PW 10 1 =1 ms 0m 10 R (a DS(o t V n) G S Lim = 10 ited V) s n tio ipa ss Di 0.1 r we Po Lim d ite s) (5 0.01 Single pulse Mounted on FR-4 board of 50 mm x 50 mm x 1.6 mm 0.001 0.01 0.1 1 10 100 1000 VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH rth(ch-A) - Transient Thermal Resistance - °C/W ID - Drain Current - A ID(pulse) 1000 Without board 100 Mounted on FR-4 board of 50 mm x 50 mm x 1.6 mm 10 1 Single pulse 0.1 1m 10 m 100 m 1 PW - Pulse Width - s Data Sheet D17447EJ1V0DS 10 100 1000 3 2SK4035 DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 10 VGS = 10 V Pulsed VDS = 10 V Pulsed 1 ID - Drain Current - A ID - Drain Current - A 2 FORWARD TRANSFER CHARACTERISTICS 1 0.1 TA = −55°C −25°C 25°C 75°C 125°C 150°C 0.01 0.001 0.0001 0 0.00001 0 2 4 6 8 10 0 VDS - Drain to Source Voltage - V | yfs | - Forward Transfer Admittance - S 5 4 3 2 1 0 RDS(on) - Drain to Source On-state Resistance - Ω 25 75 125 175 10 75°C 125°C 150°C 0.1 VDS = 10 V Pulsed 0.01 0.01 0.1 1 10 ID - Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 8 7 VGS = 10 V Pulsed 6 5 4 3 2 1 0 0.01 0.1 1 10 8 ID = 0.25 A Pulsed 7 6 5 4 3 2 1 0 0 5 10 15 20 25 VGS - Gate to Source Voltage - V ID - Drain Current - A 4 TA = −55°C −25°C 25°C 1 Tch - Channel Temperature - °C RDS(on) - Drain to Source On-state Resistance - Ω VGS(off) - Gate Cut-off Voltage - V VDS = 10 V ID = 1 mA -25 15 FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 7 -75 10 VGS - Gate to Source Voltage - V GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE 6 5 Data Sheet D17447EJ1V0DS 30 DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 8 1000 6 5 4 VGS = 10 V 3 2 1 100 Ciss 10 Coss VGS = 0 V f = 1 MHz 0 -75 -25 25 75 125 1 10 100 1000 VDS - Drain to Source Voltage - V SWITCHING CHARACTERISTICS DYNAMIC INPUT/OUTPUT CHARACTERISTICS td(off) td(on) tr tf 1 VDD = 200 V 125 V 50 V 200 10 8 150 6 100 VGS 4 50 2 VDS ID = 0.5 A 0 0 0.1 1 10 0 ID - Drain Current - A 1 2 3 4 5 QG - Gate Charge - nC SOURCE TO DRAIN DIODE FORWARD VOLTAGE REVERSE RECOVERY TIME vs. DIODE FORWARD CURRENT 1000 trr - Reverse Recovery Time - ns 10 IF - Diode Forward Current - A 0.1 Tch - Channel Temperature - °C VGS = 10 V VDD = 125 V RG = 10 Ω 10 1 0.01 175 Crss VGS - Gate to Source Voltage - V 7 Ciss, Coss, Crss - Capacitance - pF ID = 0.25 A Pulsed 100 td(on), tr, td(off), tf - Switching Time - ns CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE VDS - Drain to Source Voltage - V RDS(on) - Drain to Source On-state Resistance - Ω 2SK4035 1 0.1 VGS = 0 V Pulsed di/dt = 100 A/µs VGS = 0 V 100 10 0.01 1 0 0.5 1 1.5 VF(S-D) - Source to Drain Voltage - V 0.1 1 10 IF - Diode Forward Current - A Data Sheet D17447EJ1V0DS 5 2SK4035 • The information in this document is current as of July, 2005. 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