DATA SHEET JUNCTION FIELD EFFECT TRANSISTOR 2SK660 N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM DESCRIPTION The 2SK660 is suitable for converter of ECM. FEATURES • Compact package • High forward transfer admittance | yfs | = 1200 µS TYP. (VDS = 5 V, ID = 0 µA) • Low capacitance Ciss = 4.5 pF (VDS = 5 V, VGS = 0 V, f = 1 MHz) • Includes diode and high resistance at G - S ORDERING INFORMATION PART NUMBER PACKAGE 2SK660 SST ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage Note VDSX 20 V VGDO –20 V Drain Current ID 10 mA Gate Current IG 10 mA Total Power Dissipation PT 100 mW Junction Temperature Tj 125 °C Storage Temperature Tstg –55 to +125 °C Gate to Drain Voltage EQUIVALENT CIRCUIT Drain Gate Source Note VGS = –1.0 V Remark Please take care of ESD (Electro Static Discharge) when you handle the device in this document. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D10753EJ2V0DS00 (2nd edition) Date Published January 2002 NS CP(K) Printed in Japan © 2002 2SK660 ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTICS Zero Gate Voltage Drain Cut-off Current SYMBOL TEST CONDITIONS IDSS VDS = 5.0 V, VGS = 0 V MIN. 60 Gate Cut-off Voltage VGS(off) VDS = 5.0 V, ID = 1.0 µA Forward Transfer Admittance | yfs1 | VDS = 5.0 V, ID = 30 µA, f = 1.0 kHz 150 Forward Transfer Admittance | yfs2 | VDS = 5.0 V, VGS = 0 V, f = 1.0 kHz 150 Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Noise Voltage NV 500 µA −1.0 V µS µS 1200 6.0 pF VGS = 0 V 1.5 3.0 pF 1.2 3.0 pF 1.0 3.0 µV f = 1.0 MHz See Test Circuit NV (r.m.s) C = 10 pF 2 UNIT 4.5 +4.5 V JIS A MAX. VDS = 5.0 V NOISE VOLTAGE TEST CIRCUIT R = 1 kΩ TYP. Data Sheet D10753EJ2V0DS 2SK660 TYPICAL CHARACTERISTICS (TA = 25°C) DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 500 0.15 V 100 400 ID - Drain Current - µA PT - Total Power Dissipation - mW 120 80 60 40 20 0 30 60 90 120 150 0.05 V 300 VGS = 0 V 200 −0.05 V 100 −0.10 V −0.15 V −0.20 V 0 0 0.10 V 180 0 2 GATE TO SOURCE CURRENT vs. GATE TO SOURCE VOLTAGE 40 1.0 20 10 0 0.2 0.4 0.6 0.8 1.0 −20 ID - Drain Current - mA IG - Gate Current - µ A 8 10 DRAIN CURRENT vs. GATE TO SOURCE VOLTAGE 30 −10 6 VDS - Drain to Source Voltage - V TA - Ambient Temperature - ˚C −1.0 −0.8 −0.6 −0.4 −0.2 4 −0.25 V −0.30 V VDS = 5 V 0.8 0.6 0.4 0.2 −30 −40 −0.2 0 0.2 0.4 VGS - Gate to Source Voltage - V FORWARD TRANSFER ADMITTANCE vs. GATE TO SOURCE VOLTAGE INPUT AND FEEDBACK CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 3.0 10 VDS = 5 V 2.5 2.0 1.5 1.0 0.5 CiSS, COSS - Capacitance - pF | yfs | - Forward Transfer Admittance - mS −0.4 VGS - Gate to Source Voltage - V VDS = 0 V f = 1.0 kHz 8 CISS 5 3 2 COSS 0 −0.4 −0.3 −0.2 −0.1 0 0.1 0.2 0.3 0.4 1 1 2 5 10 20 50 100 VDS - Drain to Source Voltage - V VGS - Gate to Source Voltage - V Data Sheet D10753EJ2V0DS 3 VGS (off) - Gate to Source Cut-off Voltage - V | yfs | - Forward Transfer Admittance - mS 2SK660 FORWARD TRANSFER ADMITTANCE AND GATE TO SOURCE CUT-OFF VOLTAGE vs. ZEROGATE VOLTAGE DRAIN CURRENT CO-RELATION 10.0 VDS = 5 V 5.0 2.0 | yfs | 1.0 0.5 0.2 VGS (off) 0.1 0.05 0.02 0.01 10 20 50 100 200 500 1000 Zero-Gate Voltage Drain Current - µ A 4 Data Sheet D10753EJ2V0DS 2SK660 PACKAGE DRAWING (Unit: mm) 2.0±0.2 1.0 TYP. 3.0±0.2 4.0±0.2 0.6 TYP. 0.50 TYP. 0.42 TYP. 12.5 MIN. 0.45 TYP. 1.27 TYP. G S 1.27 TYP. 1.35 TYP. D Data Sheet D10753EJ2V0DS 5 2SK660 [MEMO] 6 Data Sheet D10753EJ2V0DS 2SK660 [MEMO] Data Sheet D10753EJ2V0DS 7 2SK660 • The information in this document is current as of January, 2002. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. • No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. 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