NEC's C TO X BAND N-CHANNEL GaAs MES FET NE722S01 OUTLINE DIMENSION FEATURES • HIGH POWER GAIN: GS = 6 dB TYP at f = 12 GHz (Units in mm) PACKAGE OUTLINE SO1 • OUTPUT POWER (at 1 dB compression): 15 dB TYP at f = 12 GHz 2.0 ± 0.2 • LOW NOISE/HIGH GAIN: NF = 0.9 dB TYP, Ga = 12 dB TYP at f = 4 GHz 2. 1 0 ± 0. 2 • GATE LENGTH: LG = 0.8 µm (recessed gate) • GATE WIDTH: WG = 400 µm 2 P DESCRIPTION NEC's NE722S01 is a low cost GaAs MESFET suitable for both amplifier and oscillator applications through X-band. The device features a 0.8 micron recessed gate, triple epitaxial technology and is fabricated using ion implantation for improved RF and DC performance and uniformity. This device's low phase noise and high fT makes it a excellent choice for oscillator applications on a digital LNB (Low Noise Block). The NE722S01 is housed in a low cost plastic package which is available in Tape and Reel. 4 3 0.5 TYP 2.0±0.2 1. Source 2. Drain 3. Source 4. Gate 0.65 TYP 1.9 ± 0.2 1.6 NEC's stringent quality assurance and test procedures ensure the highest reliability performance. 0.125 ± 0.05 1.5 MAX APPLICATIONS 0.4 MAX 4.0 ± 0.2 • C to X band low noise amplifiers • C to X band oscillators ELECTRICAL CHARACTERISTICS (TA = 25°C) PART NUMBER PACKAGE OUTLINE SYMBOLS PARAMETERS AND CONDITIONS NE722S01 S01 UNITS MIN TYP MAX IGSO Gate to Source Leak Current, VGS = -5 V uA – 1.0 10 IDSS Saturated Drain Current, VDS = 3 V, VGS = 0 V mA 60 90 120 VGS Gate to Source Cutoff Voltage, VDS = 3 V, ID = 100 µA V -0.5 – -4.0 gm Transconductance, VDS = 3 V, IDS = 30 mA mS 20 45 – GS Power Gain, VDS = 3 V, IDS = 30 mA, f = 12 GHz dB – 6 – P1dB Output Power at 1 dB Gain Compression Point at VDS = 3 V, IDS = 30 mA, f = 12 GHz dBm 15.0 NF Noise Figure, VDS = 3 V, IDS = 10 mA, f = 4 GHz dB – 0.9 – Ga Associated Gain, VDS = 3 V, IDS = 10 mA, f = 4 GHz dB – 12 _ California Eastern Laboratories NE722S01 ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C) SYMBOLS PARAMETERS UNITS RATINGS VDS Drain to Source Voltage V 5.0 VGS Gate to Source Voltage V -5.0 VGD Gate to Drain Voltage V -6.0 IDS Drain Current mA IDSS PT Total Power Dissipation mW 250 PIN Input Power mW 40 TCH Channel Temperature °C 125 TSTG Storage Temperature °C -65 to +125 Note: 1. Operation in excess of any one of these parameters may result in permanent damage. RECOMMENDED OPERATING CONDITIONS (TA = 25°C) PART NUMBER NE722S01 SYMBOLS PARAMETERS Drain to Source Voltage VDS IDS Drain Current UNITS MIN TYP MAX V 3 4 mA 30 40 ORDERING INFORMATION PART NUMBER SUPPLY FORM NE722S01-T1 Tape & Reel 1000 pcs/reel NE722S01-T1B1 Tape & Reel 4000 pcs/reel MARKING P Note: 1. Available if quantity is over 100k per month TYPICAL PERFORMANCE CURVES (TA = 25°C) DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 500 100 400 80 VGS = 0.0 V Drain Current, IDS (mA) Total Power Dissipation, (PT) mW TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 300 200 100 -0.5 V 60 40 -1.0 V 20 -2.0 V 0 50 100 150 200 250 1 0 Ambient Temperature, TA (°C) DRAIN CURRENT vs. GATE TO SOURCE VOLTAGE 3 4 5 MAXIMUM AVAILABLE GAIN, FORWARD INSERTION GAIN vs. FREQUENCY 20 Maximum Stable Gain, MSG (dB) Maximum Available Gain, MAG (dB) Forward Insertion Gain, |S21S|2 (dB) VDS = 3.0 V 80 Drain Current, IDS (mA) 2 Drain to Source Voltage, VDS (V) 60 40 20 0 -2.0 -4.0 0 VDS = 3 V IDS = 10 mA MSG. 16 12 |S21S| 2 MAG. 8 4 |S21| (K ± K 2 - 1 ). |S12| When K ≤ 1, MAG is undefined and MSG values are used. 2 2 2 |S21| MSG = , K = 1 + | ∆ | - |S11| - |S22| , ∆ = S11 S22 - S21 S12 |S12| 2 |S12 S21| MAG = 0 0.5 Gate to Source Voltage, VGS (V) 1 5 10 14 20 50 Frequency, f (GHz) Note: 1. Gain Calculation: MAG = |S21| |S12| (K ± K 2- 1 ). When K ≤ 1, MAG is undefined and MSG values are used. MSG = MAG = Maximum Available Gain MSG = Maximum Stable Gain 2 2 2 |S21| , K = 1 + | ∆ | - |S11| - |S22| , ∆ = S11 S22 - S21 S12 |S12| 2 |S12 S21| NE722S01 TYPICAL PERFORMANCE CURVES OUTPUT POWER vs. INPUT POWER 20 Output Power, Pout (dBm) VDS = 3.0 V, ID = 30 mA fin = 12 GHz 15 10 5 0 -5 -10 -15 -10 -5 0 5 Input Power, Pin (dBm) 10 15 (TA = 25°C) NE722S01 TYPICAL SCATTERING PARAMETERS (TA = 25°C) NE722S01 VDS = 3.0 V, IDS = 10 mA FREQUENCY GHz 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 10.0 10.5 11.0 11.5 12.0 12.5 13.0 13.5 14.0 14.5 15.0 15.5 16.0 16.5 17.0 17.5 18.0 S11 MAG 0.912 0.876 0.828 0.784 0.737 0.699 0.660 0.620 0.583 0.547 0.516 0.496 0.500 0.510 0.526 0.540 0.553 0.566 0.576 0.592 0.608 0.640 0.665 0.693 0.718 0.744 0.759 0.756 0.750 0.738 0.728 0.721 0.721 S21 ANG -44.0 -56.1 -68.0 -79.3 -89.5 -99.3 -109.0 -119.0 -130.6 -143.8 -158.5 -173.7 172.6 159.9 148.4 138.4 129.9 120.6 111.3 101.8 92.8 85.2 79.1 73.3 69.3 64.8 59.6 55.5 51.0 45.4 40.9 36.4 32.5 MAG 3.100 3.037 2.935 2.819 2.696 2.589 2.499 2.420 2.355 2.283 2.196 2.098 2.016 1.920 1.834 1.749 1.676 1.608 1.542 1.470 1.401 1.325 1.256 1.183 1.111 1.045 0.966 0.893 0.839 0.777 0.714 0.676 0.624 S12 ANG 136.2 124.9 113.9 103.7 94.2 85.3 76.6 67.9 59.4 50.1 41.0 32.2 23.7 15.3 7.2 -0.6 -7.9 -15.8 -23.5 -31.1 -38.4 -45.7 -52.7 -59.7 -66.4 -73.3 -79.7 -85.4 -91.0 -96.7 -101.5 -105.7 -109.8 MAG 0.077 0.091 0.105 0.115 0.124 0.130 0.136 0.140 0.146 0.148 0.151 0.149 0.152 0.150 0.151 0.151 0.152 0.156 0.157 0.157 0.158 0.159 0.160 0.158 0.162 0.163 0.159 0.159 0.160 0.158 0.158 0.156 0.158 S22 ANG 59.0 51.2 42.9 36.2 30.0 24.7 19.1 14.1 9.1 3.8 -1.6 -6.6 -10.1 -13.6 -17.3 -20.3 -23.2 -26.3 -29.8 -32.9 -35.7 -38.0 -41.3 -44.5 -47.0 -49.5 -53.4 -55.8 -57.6 -61.4 -63.1 -65.9 -68.4 MAG 0.659 0.629 0.597 0.570 0.546 0.529 0.514 0.495 0.475 0.447 0.408 0.366 0.331 0.298 0.274 0.265 0.275 0.297 0.312 0.328 0.340 0.339 0.341 0.356 0.386 0.421 0.474 0.516 0.563 0.601 0.624 0.628 0.625 ANG -30.2 -38.0 -46.4 -53.5 -60.9 -67.2 -73.6 -79.6 -85.2 -91.5 -97.0 -103.7 -110.8 -120.4 -133.2 -147.9 -160.7 -172.7 178.5 171.0 163.5 155.6 145.5 133.8 122.3 111.6 104.4 98.7 95.8 92.8 89.4 86.9 82.2 Note: 1. Gain Calculation: MAG = |S21| |S12| (K ± K 2- 1 ). When K ≤ 1, MAG is undefined and MSG values are used. MSG = MAG = Maximum Available Gain MSG = Maximum Stable Gain 2 2 2 |S21| , K = 1 + | ∆ | - |S11| - |S22| , ∆ = S11 S22 - S21 S12 |S12| 2 |S12 S21| NE722S01 TYPICAL SCATTERING PARAMETERS (TA = 25°C) NE722S01 VDS = 3.0 V, IDS = 30 mA FREQUENCY GHz 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 10.0 10.5 11.0 11.5 12.0 12.5 13.0 13.5 14.0 14.5 15.0 15.5 16.0 16.5 17.0 17.5 18.0 S11 MAG 0.896 0.851 0.799 0.753 0.705 0.666 0.625 0.586 0.553 0.521 0.497 0.489 0.501 0.519 0.540 0.562 0.575 0.589 0.602 0.619 0.633 0.666 0.690 0.715 0.740 0.769 0.780 0.778 0.774 0.759 0.750 0.739 0.741 S21 ANG -48.3 -61.5 -74.1 -86.1 -97.0 -107.3 -117.5 -128.3 -140.6 -154.2 -169.4 175.8 162.9 151.0 140.4 131.2 123.2 114.3 105.5 96.4 88.0 80.9 75.2 70.0 66.4 62.0 57.0 52.5 48.2 42.7 38.1 33.9 30.2 MAG 3.721 3.606 3.449 3.275 3.102 2.957 2.834 2.724 2.627 2.522 2.402 2.281 2.176 2.062 1.963 1.865 1.786 1.709 1.637 1.554 1.480 1.400 1.321 1.241 1.169 1.101 1.021 0.945 0.888 0.824 0.767 0.721 0.672 S12 ANG 134.0 122.4 111.3 101.1 91.6 82.7 74.0 65.3 56.8 47.7 39.0 30.5 22.5 14.5 6.8 -0.7 -7.8 -15.4 -22.9 -30.2 -37.4 -44.5 -51.1 -57.9 -64.2 -70.8 -77.1 -82.6 -88.0 -93.4 -98.3 -102.3 -106.6 MAG 0.063 0.077 0.086 0.095 0.102 0.106 0.111 0.115 0.122 0.125 0.128 0.128 0.131 0.135 0.139 0.142 0.146 0.151 0.156 0.161 0.163 0.168 0.171 0.173 0.173 0.174 0.178 0.175 0.176 0.176 0.174 0.175 0.176 S22 ANG 59.9 53.2 45.1 39.6 34.1 29.5 24.9 20.6 17.0 12.6 8.5 5.0 1.8 -1.2 -3.4 -6.8 -9.9 -12.8 -16.7 -20.5 -23.9 -27.4 -30.5 -33.9 -37.3 -41.0 -45.3 -48.6 -51.4 -56.1 -58.3 -61.1 -63.3 MAG 0.547 0.519 0.489 0.464 0.443 0.431 0.419 0.406 0.390 0.366 0.334 0.296 0.267 0.234 0.209 0.206 0.221 0.246 0.265 0.285 0.299 0.303 0.307 0.326 0.358 0.396 0.450 0.494 0.540 0.578 0.601 0.604 0.599 ANG -29.6 -37.4 -45.4 -52.6 -59.5 -65.5 -71.5 -76.9 -82.2 -88.2 -93.4 -99.7 -106.8 -117.8 -132.7 -150.0 -164.3 -177.2 173.7 166.1 158.1 149.9 139.1 127.4 116.2 106.2 99.5 94.8 92.0 89.4 86.3 84.0 79.2 Note: 1. Gain Calculation: MAG = |S21| |S12| (K ± K 2- 1 ). When K ≤ 1, MAG is undefined and MSG values are used. MSG = MAG = Maximum Available Gain MSG = Maximum Stable Gain 2 2 2 |S21| , K = 1 + | ∆ | - |S11| - |S22| , ∆ = S11 S22 - S21 S12 |S12| 2 |S12 S21| NE722S01 NONLINEAR MODEL SCHEMATIC CGD_PKG 0.001pF Ldx DRAIN Lgx GATE Rgx 1 ohms Q1 0.5nH Rdx 1 ohms 0.71nH CGS_PKG 0.08pF Lsx 0.13nH CDS_PKG 0.1PF Rsx 0.01 ohms SOURCE FET NONLINEAR MODEL PARAMETERS (1) Parameters Q1 Parameters Q1 VTO -2.24 RG 8 VTOSC 0 RD UNITS Parameter Units time seconds 0.5 capacitance farads ALPHA 8 RS 6 inductance henries BETA 0.055 RGMET 0 resistance ohms TQGAMMA 0.04 TNOM 27 voltage volts TQGAMMAAC 0.05 XTI 3 current amps Q 1.5 EG 1.43 TQDELTA 0.25 VTOTC 0 VBI 1 BETATCE 0 IS 1e-14 FFE 1 N 1.3 FNC(2) 150e-6 RIS 0 R 0.5 RID 0 P 1 TAU 3e-12 C 0.9 CDS 0.19e-12 RDB 250 CBS 1e-9 CGS 0.92e-12 CGD 0.05e-12 DELTA1 0.3 DELTA2 0.3 FC 0.5 VBR Infinity MODEL RANGE Frequency: 0.1 to 18 GHz Bias: VDS = 2 V to 4 V, ID = 10 mA to 40 mA Date: 02/2002 (1) ADS TOM Model (2) To simulate phase noise using AF/KF: AF = 1.5 KF = 2e-10 Life Support Applications These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and agree to fully indemnify CEL for all damages resulting from such improper use or sale. 07/01/2004 A Business Partner of NEC Compound Semiconductor Devices, Ltd.