NEC NE429M01

DATA SHEET
HETERO JUNCTION FIELD EFFECT TRANSISTOR
NE429M01
C to Ku BAND SUPER LOW NOISE AMPLIFIER
N-CHANNEL HJ-FET
DESCRIPTION
The NE429M01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its
excellent low noise and high associated gain make it suitable for DBS, TVRO and another commercial systems.
FEATURES
•
Super low noise figure & High associated gain
•
6-pin super minimold package
•
Gate width: Wg = 200µm
NF = 0.9 dB TYP., Ga = 10 dB TYP. @ f = 12 GHz
ORDERING INFORMATION
Part Number
NE429M01-T1
Package
Marking
6-pin super minimold
V72
Supplying Form
Embossed tape 8 mm wide.
1, 2, 3 pins face to perforation side of the tape
Qty 3 kpcs/reel
ABSOLUTE MAXIMUM RATINGS (TA = +25 °C)
Parameter
Symbol
Ratings
Unit
Drain to Source Voltage
VDS
4.0
V
Gate to Source Voltage
VGS
−3.0
V
Drain Current
ID
IDSS
mA
Gate Current
IG
100
µA
Total Power Dissipation
Ptot
125
mW
Channel Temperature
Tch
125
°C
Storage Temperature
Tstg
−65 to +125
°C
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. P12254EJ3V0DS00 (3rd edition)
Date Published November 1999 N CP(K)
Printed in Japan
The mark
shows major revised points.
©
1997, 1999
NE429M01
PIN CONNECTIONS
3
2
1
V72
(Top View)
(Bottom View)
4
4
3
5
5
2
6
6
1
Pin No.
Pin name
1
Gate
2
Source
3
Source
4
Drain
5
Source
6
Source
RECOMMENDED OPERATING CONDITION (TA = +25 °C)
Parameter
Symbol
MIN.
TYP.
MAX.
Unit
VDS
1
2
3
V
Drain Current
ID
5
10
20
mA
Input Power
Pin
−
−
0
dBm
Drain to Source Voltage
ELECTRICAL CHARACTERISTICS (TA = +25 °C)
Parameter
Symbol
Test Conditions
TYP.
MAX.
Unit
Gate to Source Leak Current
IGSO
VGS = −3 V
−
0.5
10
µA
Saturated Drain Current
IDSS
VDS = 2 V, VGS = 0 V
20
60
90
mA
VGS(off)
VDS = 2 V, ID = 100 µA
−0.2
−0.7
−2.0
V
Transconductance
gm
VDS = 2 V, ID = 10 mA
45
60
−
mS
Noise Figure
NF
f = 12 GHz
−
0.9
1.2
dB
−
0.4
−
f = 12 GHz
9.0
10
−
f = 4 GHz
−
15.0
−
Gate to Source Cutoff Voltage
f = 4 GHz
Associated Gain
2
MIN.
Ga
VDS = 2 V
ID = 10 mA
Data Sheet P12254EJ3V0DS00
dB
NE429M01
TYPICAL CHARACTERISTICS (TA = +25 °C)
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
100
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
80
200
Drain Current ID (mA)
Total Power Dissipation Ptot (mW)
250
150
100
60
–0.2 V
40
–0.4 V
20
50
0
VGS = 0 V
–0.6 V
50
100
150
200
0
250
1
2
3
5
4
Ambient Temperature TA (˚C)
Drain to Source Voltage VDS (V)
DRAIN CURRENT vs.
GATE TO SOURCE VOLTAGE
MAXIMUM AVAILABLE GAIN, FORWARD
INSERTION GAIN vs. FREQUENCY
24
Drain Current ID (mA)
60
40
20
0
–2.0
–1.0
0
Maximum Stable Gain MSG. (dB)
Maximum Available Gain MAG. (dB)
Forward Insertion Gain |S21S|2 (dB)
VDS = 2 V
VDS = 2 V
ID = 10 mA
20
MSG.
16
MAG.
|S21S|2
12
8
Gate to Source Voltage VGS (V)
4
1
2
4
6
8 10
14
20 30
Frequency f (GHz)
Data Sheet P12254EJ3V0DS00
3
NE429M01
Gain Calculations
MSG. =
S21
MAG. =
S21
S12
S12
1 + ∆2−S112−S222
K=
(K ± √K2 − 1)
2 S12S21
∆ = S11 • S22 − S21 • S12
NOISE FIGURE, ASSOCIATED GAIN vs.
FREQUENCY
20
Noise Figure NF (dB)
Ga
2.0
16
1.5
12
1.0
8
0.5
4
NF
0
1
2
4
6
8 10
14
Frequency f (GHz)
4
Data Sheet P12254EJ3V0DS00
0
20 30
Associated Gain Ga (dB)
VDS = 2 V
ID = 10 mA
NE429M01
S-PARAMETERS
MAG. AND ANG.
VDS = 2 V, ID = 10 mA
FREQUENCY
MHz
MAG.
S11
ANG.
(deg.)
MAG.
S21
ANG.
(deg.)
MAG.
S12
ANG.
(deg.)
MAG.
S22
ANG.
(deg.)
2000
0.939
−33.5
4.728
146.1
0.040
69.6
0.597
−22.6
2500
0.916
−42.1
4.643
138.0
0.049
63.3
0.571
−28.5
3000
0.889
−50.7
4.546
130.0
0.055
59.2
0.557
−34.1
3500
0.856
−58.1
4.405
122.7
0.062
54.4
0.535
−39.4
4000
0.822
−65.2
4.279
115.1
0.066
50.2
0.510
−44.7
4500
0.790
−71.6
4.165
108.4
0.071
46.5
0.488
−48.9
5000
0.768
−77.9
4.099
102.2
0.075
41.6
0.478
−53.8
5500
0.736
−84.2
4.024
95.9
0.080
37.9
0.459
−56.9
6000
0.709
−91.2
4.013
89.3
0.082
36.9
0.441
−61.0
6500
0.679
−99.0
4.018
82.5
0.086
32.2
0.418
−65.5
7000
0.651
−109.1
4.007
74.7
0.091
27.4
0.386
−71.9
7500
0.626
−120.5
3.978
66.7
0.097
23.4
0.341
−78.7
8000
0.598
−132.6
3.940
58.6
0.099
17.0
0.296
−86.2
8500
0.576
−144.9
3.862
50.2
0.097
12.1
0.252
−94.9
9000
0.551
−157.4
3.775
42.3
0.100
6.6
0.212
−106.2
9500
0.527
−169.6
3.686
34.2
0.102
1.2
0.185
−121.8
10000
0.504
177.7
3.585
25.6
0.101
−6.1
0.166
−139.1
10500
0.494
163.6
3.475
17.8
0.101
−12.3
0.155
−157.3
11000
0.495
149.1
3.367
9.4
0.098
−16.5
0.149
178.4
11500
0.529
134.8
3.282
0.5
0.096
−22.3
0.148
158.4
12000
0.563
120.1
3.167
−8.6
0.095
−30.6
0.165
134.2
12500
0.608
106.2
3.011
−18.5
0.092
−38.8
0.194
109.4
13000
0.637
95.3
2.773
−27.7
0.085
−46.3
0.237
91.2
13500
0.645
86.6
2.562
−35.9
0.079
−50.2
0.279
80.9
14000
0.668
78.8
2.398
−43.8
0.072
−54.7
0.321
76.2
14500
0.689
70.0
2.231
−52.3
0.073
−60.3
0.372
74.3
15000
0.702
63.1
2.028
−59.7
0.072
−71.7
0.411
71.4
15500
0.713
57.1
1.917
−66.9
0.067
−79.5
0.427
71.5
16000
0.743
51.9
1.772
−75.6
0.065
−81.8
0.462
69.3
16500
0.766
46.1
1.633
−83.4
0.064
−83.1
0.500
62.6
17000
0.785
41.7
1.508
−92.0
0.063
−90.1
0.533
57.5
17500
0.802
37.4
1.335
−101.3
0.059
−104.7
0.580
50.0
18000
0.814
34.3
1.140
−108.9
0.053
−106.3
0.596
43.2
The information in this data is subject to change without notice.
Data Sheet P12254EJ3V0DS00
5
NE429M01
AMP. PARAMETERS
VDS = 2 V, ID = 10 mA
GUmax
GAmax
|S21|2
|S12|2
MHz
dB
dB
dB
dB
2000
24.65
13.49
−28.05
2500
22.98
13.34
−26.28
3000
21.55
13.15
3500
20.08
12.88
4000
18.83
4500
17.83
5000
5500
FREQUENCY
K
Delay
Mason’s U
G1
G2
ns
dB
dB
DB
0.28
0.045
30.977
9.24
1.91
0.34
0.045
28.134
7.92
1.72
−25.19
0.38
0.044
29.097
6.79
1.61
−24.16
0.45
0.041
26.443
5.74
1.46
12.63
−23.67
0.53
0.042
24.821
4.89
1.31
12.39
−22.94
0.59
0.038
23.707
4.26
1.18
17.25
12.25
−22.49
0.63
0.034
22.719
3.87
1.13
16.50
12.09
−21.93
0.69
0.035
21.774
3.39
1.03
6000
16.04
12.07
−21.76
0.73
0.037
23.007
3.03
0.94
6500
15.60
12.08
−21.30
0.77
0.038
22.393
2.69
0.83
7000
15.16
12.06
−20.81
0.80
0.043
22.558
2.40
0.70
7500
14.69
11.99
−20.30
0.82
0.044
23.290
2.16
0.54
8000
14.24
11.91
−20.13
0.87
0.045
21.787
1.93
0.40
8500
13.77
11.74
−20.25
0.94
0.047
20.820
1.75
0.29
9000
13.31
11.54
−20.01
0.99
0.044
20.035
1.57
0.20
9500
12.90
14.49
11.33
−19.80
1.03
0.045
19.527
1.42
0.15
10000
12.48
13.54
11.09
−19.91
1.10
0.048
18.251
1.27
0.12
10500
12.14
13.01
10.82
−19.92
1.15
0.043
17.588
1.21
0.11
11000
11.87
12.56
10.55
−20.15
1.21
0.046
17.140
1.22
0.10
11500
11.84
12.51
10.32
−20.35
1.22
0.049
17.344
1.42
0.10
12000
11.79
12.42
10.01
−20.42
1.21
0.051
17.372
1.66
0.12
12500
11.74
12.27
9.57
−20.73
1.23
0.055
17.250
2.00
0.17
13000
11.37
11.68
8.86
−21.43
1.34
0.051
15.992
2.26
0.25
13500
10.86
11.00
8.17
−22.01
1.48
0.045
14.752
2.33
0.35
14000
10.64
10.73
7.60
−22.90
1.59
0.044
14.134
2.57
0.47
14500
10.41
10.56
6.97
−22.73
1.53
0.047
14.250
2.80
0.65
15000
9.90
10.19
6.14
−22.83
1.53
0.041
13.739
2.95
0.81
15500
9.61
10.00
5.65
−23.48
1.60
0.040
13.276
3.08
0.87
16000
9.51
10.05
4.97
−23.75
1.53
0.048
13.699
3.49
1.05
16500
9.35
9.90
4.26
−23.84
1.49
0.044
13.763
3.84
1.25
17000
9.17
9.97
3.57
−23.99
1.41
0.048
14.262
4.15
1.45
17500
8.77
9.96
2.51
−24.61
1.36
0.051
14.537
4.48
1.78
18000
7.76
8.62
1.14
−25.57
1.66
0.042
11.758
4.72
1.91
The information in this data is subject to change without notice.
6
Data Sheet P12254EJ3V0DS00
NE429M01
NOISE PARAMETERS
VDS = 2 V, ID = 10 mA
Freq. (GHz)
NFmin. (dB)
Γopt.
Ga (dB)
Rn/50
MAG.
ANG. (deg.)
4.0
0.40
15.5
0.51
75
0.18
6.0
0.49
13.9
0.49
103
0.11
8.0
0.60
12.5
0.44
145
0.06
10.0
0.74
11.3
0.32
−162
0.06
12.0
0.90
10.0
0.23
−73
0.16
14.0
1.08
8.9
0.45
−5
0.36
16.0
1.30
7.8
0.60
42
0.58
18.0
1.53
6.8
0.76
78
0.68
The information in this data is subject to change without notice.
Data Sheet P12254EJ3V0DS00
7
NE429M01
PACKAGE DIMENSIONS
0.1 MIN.
6 PIN SUPER MINIMOLD (UNIT: mm)
2.1 ±0.1
0 to 0.1
0.65
0.65
1.3
2.0 ±0.2
8
0.15 +0.1
–0
1.25 ±0.1
0.2 +0.1
–0
Data Sheet P12254EJ3V0DS00
0.7
0.9 ±0.1
NE429M01
PRECAUTION
Avoid high static voltage and electric fields, because this device is Hetero Junction field effect transistor with
shottky barrier gate.
RECOMMENDED SOLDERING CONDITIONS
This product should be soldered under the following recommended conditions.
For soldering methods and
conditions other than those recommended below, contact your NEC sales representative.
Soldering Method
Soldering Conditions
Recommended Condition Symbol
Infrared Reflow
Package peak temperature: 235 °C or below
Time: 30 seconds or less (at 210 °C)
Note
Count: 3, Exposure limit: None
IR35-00-3
VPS
Package peak temperature: 215 °C or below
Time: 40 seconds or less (at 200 °C)
Note
Count: 3, Exposure limit: None
VP15-00-3
Wave Soldering
Soldering bath temperature: 260 °C or below
Time: 10 seconds or less
Note
Count: 1, Exposure limit: None
WS60-00-1
Partial Heating
Pin temperature: 300 °C
Time: 3 seconds or less (per side of device)
Note
Exposure limit: None
–
Note After opening the dry pack, keep it in a place below 25 °C and 65 % RH for the allowable storage period.
Caution
Do not use different soldering methods together (except for partial heating).
For details of recommended soldering conditions for surface mounting, refer to information document
SEMICONDUCTOR DEVICE MOUNTING TECHNOLOGY MANUAL (C10535E).
Data Sheet P12254EJ3V0DS00
9
NE429M01
[MEMO]
10
Data Sheet P12254EJ3V0DS00
NE429M01
[MEMO]
Data Sheet P12254EJ3V0DS00
11
NE429M01
CAUTION
The Great Care must be taken in dealing with the devices in this guide.
The reason is that the material of the devices is GaAs (Gallium Arsenide), which is
designated as harmful substance according to the law concerned.
Keep the law concerned and so on, especially in case of removal.
• The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
• No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in
this document.
• NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property
rights of third parties by or arising from use of a device described herein or any other liability arising from use
of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other
intellectual property rights of NEC Corporation or others.
• Descriptions of circuits, software, and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these circuits,
software, and information in the design of the customer's equipment shall be done under the full responsibility
of the customer. NEC Corporation assumes no responsibility for any losses incurred by the customer or third
parties arising from the use of these circuits, software, and information.
• While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
• NEC devices are classified into the following three quality grades:
"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a
customer designated "quality assurance program" for a specific application. The recommended applications of
a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device
before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific: Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact an NEC sales representative in advance.
M7 98. 8