DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE4211M01 C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES • Super low noise figure & associated gain: NF = 0.75 TYP., Ga = 12 dB TYP. @ f = 12 GHz NF = 0.4 TYP., Ga = 16 dB TYP. @ f = 4 GHz • 6-pin super minimold package • Gate width: Wg = 160 µm ORDERING INFORMATION Part Number NE4211M01-T1 Package Marking 6-pin super minimold V74 Supplying Form • 8 mm wide embossed taping • Pin 1, 2, 3 face the perforation side of the tape • Qty 3 kpcs/reel Remark To order evaluation samples, contact your nearby sales office. Part number for sample order: NE4211M01 ABSOLUTE MAXIMUM RATINGS (TA = +25°°C) Parameter Symbol Ratings Unit Drain to Source Voltage VDS 4.0 V Gate to Source Voltage VGS −3.0 V Drain Current ID IDSS mA Gate Current IG 80 µA Total Power Dissipation Ptot 125 mW Channel Temperature Tch +125 °C Storage Temperature Tstg −65 to +125 °C Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices representative for availability and additional information. Document No. PG10325EJ01V0DS (1st edition) Date Published January 2003 CP(K) Printed in Japan NEC Compound Semiconductor Devices 2002, 2003 NE4211M01 PIN CONNECTIONS (Top View) V74 3 2 (Bottom View) 4 4 3 5 5 2 6 6 1 Pin No. Pin Name 1 Gate 2 Source 3 Source 4 Drain 5 Source 6 Source 1 RECOMMENDED OPERATING RANGE (TA = +25°°C) Parameter Symbol MIN. TYP. MAX. Unit VDS 1 2 3 V Drain Current ID 5 10 15 mA Input Power Pin − − 0 dBm Drain to Source Voltage ELECTRICAL CHARACTERISTICS (TA = +25°°C, unless otherwise specified) Parameter Symbol Test Conditions MIN. TYP. MAX. Unit Gate to Source Leak Current IGSO VGS = −3 V − 0.5 10 µA Saturated Drain Current IDSS VDS = 2 V, VGS = 0 V 15 40 70 mA VGS(off) VDS = 2 V, ID = 100 µA −0.2 −0.7 −2.0 V Trans Conductance gm VDS = 2 V, ID = 10 mA 40 55 − mS Noise Figure NF VDS = 2 V, ID = 10 mA, f = 12 GHz − 0.75 1.1 dB Associated Gain Ga 10 12 − dB Noise Figure NF − 0.4 − dB Associated Gain Ga − 16 − dB Gate to Source Cutoff Voltage 2 VDS = 2 V, ID = 10 mA, f = 4 GHz Data Sheet PG10325EJ01V0DS NE4211M01 TYPICAL CHARACTERISTICS (TA = +25°°C, unless otherwise specified) DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 250 250 200 80 Drain Current ID (mA) Total Power Dissipation Ptot (mW) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 150 100 50 60 VGS = 0 V 40 –0.2 V 20 –0.4 V –0.6 V 0 50 100 150 200 250 0 1.0 2.0 Drain to Source Voltage VDS (V) Ambient Temperature TA (˚C) DRAIN CURRENT vs. GATE TO SOUCE VOLTAGE Drain Current ID (mA) VDS = 2 V 60 40 20 0 –2.0 –1.0 0 Gate to Source Voltage VGS (V) Remark The graphs indicate nominal characteristics. Data Sheet PG10325EJ01V0DS 3 NE4211M01 S-PARAMETERS S-parameters/Noise parameters are provided on the NEC Compound Semiconductor Devices Web site in a form (S2P) that enables direct import to a microwave circuit simulator without keyboard input. Click here to download S-parameters. [RF and Microwave] → [Device Parameters] URL http://www.csd-nec.com/ 4 Data Sheet PG10325EJ01V0DS NE4211M01 PACKAGE DIMENSIONS 6-PIN SUPER MINIMOLD (UNIT: mm) 2.1±0.1 0.2+0.1 –0.05 0.65 0.65 1.3 Data Sheet PG10325EJ01V0DS 0.15+0.1 –0.05 0 to 0.1 0.7 0.1 MIN. 0.9±0.1 2.0±0.2 1.25±0.1 5 NE4211M01 PRECAUTION (1) Because this device is a HJ-FET with a Schottky barrier gate structure, it is necessary that sufficient care be taken regarding static electricity and strong electric fields. Take measures against static electricity and make sure the body is earthed when mounting the device. (2) Follow the procedure below when operating the device by a gate-and-drain-independent dual power supply. Directly ground both the source pins. Fix VGS to approximately –2 V. Increase VDS to a predetermined voltage level (within the recommended operation range of VDS). Adjust VGS in line with a predetermined ID. (3) It is recommended that the bias application circuit be able to have a fixed voltage and current. (4) Adjust the I/O matching circuit after turning the bias OFF. RECOMMENDED SOLDERING CONDITIONS This product should be soldered and mounted under the following recommended conditions. For soldering methods and conditions other than those recommended below, contact your nearby sales office. Soldering Method Soldering Conditions Condition Symbol Infrared Reflow Peak temperature (package surface temperature) Time at peak temperature Time at temperature of 220°C or higher Preheating time at 120 to 180°C Maximum number of reflow processes Maximum chlorine content of rosin flux (% mass) : 260°C or below : 10 seconds or less : 60 seconds or less : 120±30 seconds : 3 times : 0.2%(Wt.) or below IR260 VPS Peak temperature (package surface temperature) Time at temperature of 200°C or higher Preheating time at 120 to 150°C Maximum number of reflow processes Maximum chlorine content of rosin flux (% mass) : 215°C or below : 25 to 40 seconds : 30 to 60 seconds : 3 times : 0.2%(Wt.) or below VP215 Wave Soldering Peak temperature (molten solder temperature) Time at peak temperature Preheating temperature (package surface temperature) Maximum number of flow processes Maximum chlorine content of rosin flux (% mass) : 260°C or below : 10 seconds or less : 120°C or below : 1 time : 0.2%(Wt.) or below WS260 Partial Heating Peak temperature (pin temperature) Soldering time (per side of device) Maximum chlorine content of rosin flux (% mass) : 350°C or below : 3 seconds or less : 0.2%(Wt.) or below HS350 Caution Do not use different soldering methods together (except for partial heating). 6 Data Sheet PG10325EJ01V0DS NE4211M01 • The information in this document is current as of January, 2003. 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(Note) (1) "NEC" as used in this statement means NEC Corporation, NEC Compound Semiconductor Devices, Ltd. and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for NEC (as defined above). M8E 00. 4 - 0110 Data Sheet PG10325EJ01V0DS 7 NE4211M01 SAFETY INFORMATION ON THIS PRODUCT Caution GaAs Products The product contains gallium arsenide, GaAs. GaAs vapor and powder are hazardous to human health if inhaled or ingested. • Do not destroy or burn the product. • Do not cut or cleave off any part of the product. • Do not crush or chemically dissolve the product. • Do not put the product in the mouth. Follow related laws and ordinances for disposal. The product should be excluded from general industrial waste or household garbage. 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