PRELIMINARY DATA SHEET N-CHANNEL GaAs HJ-FET NE6510379A 3 W L-BAND POWER GaAs HJ-FET DESCRIPTION The NE6510379A is a 3 W GaAs HJ-FET designed for middle power transmitter applications for mobile communication systems. It is capable of delivering 3 watt of output power (1/3 Duty pulse operation) with high linear gain, high efficiency and excellent distortion. Reliability and performance uniformity are assured by NEC’s stringent quality and control procedures. FEATURES • GaAs HJ-FET Structure • High Output Power : PO = +35 dBm typ. @VDS = 3.5 V, IDset = 200 mA, f = 900 MHz, Pin = +24 dBm, 1/3 duty • High Linear Gain : GL = 13 dB typ. @VDS = 3.5 V, IDset = 200 mA, f = 900 MHz, Pin = 0 dBm, 1/3 duty PO = +32.5 dBm typ. @VDS = 3.5 V, IDset = 200 mA, f = 1.9 GHz, Pin = +26 dBm, 1/3 duty GL = 8 dB typ. @VDS = 3.5 V, IDset = 200 mA, f = 1.9 GHz, Pin = 0 dBm, 1/3 duty • High Power Added Efficiency: 58% typ. @VDS = 3.5 V, IDset = 200 mA, f = 900 MHz, Pin = +24 dBm, 1/3 duty 52% typ. @VDS = 3.5 V, IDset = 200 mA, f = 1.9 GHz, Pin = +26 dBm, 1/3 duty ORDERING INFORMATION (PLAN) Part Number NE6510379A-T1 Remark Package 79A Supplying Form 12 mm tape width, 1 kpcs/reel To order evaluation samples, please contact your local NEC sales office. (Part number for sample order: NE6510379A) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Operation in excess of any one of these parameters may result in permanent damage. Parameter Symbol Ratings Unit Drain to Source Voltage VDS 6 V Gate to Source Voltage VGSO –4 V Drain Current ID 4.2 A Gate Forward Current IGF 38 mA Gate Reverse Current IGR 38 mA Total Power Dissipation PT 18 W Channel Temperature Tch 150 °C Storage Temperature Tstg –65 to +150 °C Caution Please handle this device at static-free workstation, because this is an electrostatic sensitive device. The information in this document is subject to change without notice. Document No. P13677EJ1V0DS00 (1st edition) Date Published August 1998 N CP(K) Printed in Japan © 1998 NE6510379A RECOMMENDED OPERATING LIMITS Characteristics Drain to Source Voltage Operating Duty Cycle Gain Compression Channel Temperature Symbol Test Conditions MIN. TYP. MAX. Unit 3.5 4.2 V 1/3 – Gcomp 5.0 dB Tch +110 °C VDS – Pulse width = 0.577 ms ELECTRICAL CHARACTERISTICS (TA = 25°C, Unless otherwise specified, using NEC standard test fixture. All RF characteristics is measured at 1/3 duty pulse operation, pulse width = 0.577 ms at 4.616 ms/frame) Characteristics Symbol Test Conditions Saturated Drain Current IDSS VDS = 2.5 V, VGS = 0 V Pinch-off Voltage Vp VDS = 2.5 V, ID = 21 mA Gate to Drain Break Down Voltage BVgd Igd = 21 mA Rth Channel to Case Output Power PO Drain Current ID f = 1.9 GHz, VDS = 3.5 V Pin = +26 dBm, Rg = 100 Ω IDset = 200 mA (RF OFF) Note 2 Note 1 Linear Gain ηadd TYP. MAX. 3.7 –2.0 –0.4 44 GL V V 4 31.5 Unit A 11 Thermal Resistance Power Added Efficiency MIN. 7 °C/W 32.5 dBm 760 mA 52 % 8.0 dB Notes 1. Pin = 0 dBm 2. DC performance is 100% testing. RF performance is testing several samples per wafer. Wafer rejection criteria for standard devices is 1 reject for several samples. TYPICAL RF PERFORMANCE FOR REFERENCE (NOT SPECIFIED) (TA = 25°C, Unless otherwise specified, using NEC standard test fixture. All RF characteristics is measured at 1/3 duty pulse operation, pulse width = 0.577 ms at 4.616 ms/frame) Characteristics Symbol Output Power PO Drain Current ID Power Added Efficiency Note Linear Gain ηadd Test Conditions f = 900 MHz, VDS = 3.5 V Pin = +24 dBm, Rg = 100 Ω IDset = 200 mA (RF OFF) GL Note Pin = 0 dBm 2 Preliminary Data Sheet MIN. TYP. MAX. Unit 35.0 dBm 1.40 A 58 % 13.0 dB NE6510379A NE6510379A S-PARAMETERS TEST CONDITIONS: VDS = 3.5 V, IDset = 200 mA (Preliminary Data) S11 S21 S12 S22 freq. (MHz) MAG. ANG. (deg.) MAG. ANG. (deg.) MAG. ANG. (deg.) MAG. ANG. (deg.) 600 0.958 178.7 1.601 91.9 0.017 23.4 0.848 177.3 700 0.956 178.1 1.374 91.8 0.017 26.2 0.847 176.6 800 0.954 177.1 1.210 90.7 0.017 29.7 0.845 176.1 900 0.956 176.0 1.087 90.8 0.017 33.6 0.846 175.3 1000 0.953 175.3 0.966 89.9 0.018 36.6 0.847 174.6 1100 0.952 174.4 0.869 89.7 0.018 41.0 0.848 173.8 1200 0.951 173.9 0.818 89.5 0.018 43.9 0.849 172.9 1300 0.949 173.2 0.747 88.9 0.019 45.9 0.848 172.1 1400 0.949 172.2 0.694 89.7 0.020 47.4 0.846 171.3 1500 0.952 170.6 0.656 90.0 0.020 50.2 0.846 170.4 1600 0.954 169.4 0.625 88.9 0.020 53.1 0.844 169.6 1700 0.945 168.3 0.584 90.7 0.021 56.1 0.844 168.5 1800 0.947 166.9 0.595 89.0 0.022 57.9 0.844 167.4 1900 0.949 165.0 0.570 86.1 0.022 60.3 0.846 166.1 2000 0.946 163.5 0.515 86.3 0.022 61.6 0.846 164.9 2100 0.947 161.2 0.505 85.2 0.022 64.2 0.846 163.7 2200 0.949 160.1 0.479 92.7 0.023 67.0 0.842 162.1 Preliminary Data Sheet 3 NE6510379A APPLICATION CIRCUIT EXAMPLE f = 1.9 GHz (Unit: mm) VGS VDS Rg 1000 p Tantalum Condenser Tantalum Condenser 100 µ F 47 µ F λ /4 LINE λ /4 OPEN STUB λ /4 OPEN STUB 5 5 5 2 18 16 5 10.5 C1 50 Ω LINE 2 3 4 3 INPUT 3 5 2 5 5 OUTPUT C2 3 3 30.9 4.5 30 10 3 10 3 2 3 GND f = 1.9 GHZ VDS = 3.5 V IDset = 200 mA (RF OFF) Rg = 100 Ω C1 = 30 pF C2 = 30 pF Substrate: Teflon glass (ε r = 2.6) t = 0.8 mm APPLICATION CIRCUIT EXAMPLE f = 900 MHz (Unit: mm) VGS VDS Rg 1000 p Tantalum Condenser Tantalum Condenser 100 µ F 47 µ F λ /4 OPEN STUB λ /4 OPEN STUB λ /4 LINE 2 5 C1 7 5 3 INPUT 26 f = 900 MHZ VDS = 3.5 V IDset = 200 mA (RF OFF) 4 C4 C5 3 3 3 2.5 C1 = 30 pF C6 C7 5 50 Ω LINE 7 1 4.5 R1 C3 3 C6 = 2 pF C7 = 8 pF C2 = 30 pF C3 = 1000 pF C8 = 8 pF C9 = 3 pF C4 = 2 pF C5 = 3 pF 2 3 C8 C9 3 3 5 5 3 3 3 20 R1 = 270 Ω Rg = 100 Ω Preliminary Data Sheet 7 2.5 C2 OUTPUT GND Substrate: Teflon glass (ε r = 2.6) t = 0.8 mm NE6510379A 79A Package Dimensions (Unit: mm) 1.5 ±0.2 4.2 max. Source Gate Drain 1.2 max. 1.0 max. 4.4 max. 0.8 ±0.15 Drain 0.6 ±0.15 5.7 max. Gate Source 0.4 ±0.15 0.8 max. 3.6 ±0.2 0.9 ±0.2 0.2 ±0.1 5.7 max. Bottom View 79A Package Recommended P.C.B. Layout (Unit: mm) 4.0 1.7 Stop up the hole with a rosin or something to avoid solder flow. Gate 0.5 1.0 1.2 5.9 Drain Source through hole φ 0.2 × 33 0.5 0.5 6.1 Preliminary Data Sheet 5 NE6510379A RECOMMENDED SOLDERING CONDITIONS This product should be soldered under the following recommended conditions. For soldering methods and conditions other than those recommended below, contact your NEC sales representative. Soldering Method Soldering Conditions Infrared Reflow Package peak temperature: 235°C or below Time: 30 seconds or less (at 210°C) Note Count: 2, Exposure limit : None Partial Heating Pin temperature: 260°C Time: 5 seconds or less (per pin row) Note Exposure limit : None Recommended Condition Symbol IR35-00-2 – Note After opening the dry pack, keep it in a place below 25°C and 65% RH for the allowable storage period. Caution Do not use different soldering methods together (except for partial heating). 6 Preliminary Data Sheet NE6510379A [MEMO] Preliminary Data Sheet 7 NE6510379A Caution The Great Care must be taken in dealing with the devices in this guide. The reason is that the material of the devices is GaAs (Gallium Arsenide), which is designated as harmful substance according to the law concerned. Keep the law concerned and so on, especially in case of removal. The application circuits and their parameters are for reference only and are not intended for use in actual design-ins. No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. Anti-radioactive design is not implemented in this product. M4 96. 5