NEC NE4210M01

PRELIMINARY DATA SHEET
HETERO JUNCTION FIELD EFFECT TRANSISTOR
NE4210M01
C to Ku BAND SUPER LOW NOISE AMPLIFIER
N-CHANNEL HJ-FET
DESCRIPTION
The NE4210M01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its
excellent low noise and high associated gain make it suitable for DBS, TVRO and another commercial systems.
FEATURES
•
Super Low Noise Figure & High Associated Gain
NF = 0.8 dB TYP., Ga = 11 dB TYP. at f = 12 GHz
•
6pin super minimold package
•
Gate Width: Wg = 200µm
ORDERING INFORMATION
Part Number
Package
NE4210M01-T1
6-pin super minimold
Supplying Form
Embossed tape 8 mm wide.
1, 2, 3 pins face to perforation
side of the tape
Marking
V73
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Parameter
Symbol
Ratings
Unit
Drain to Source Voltage
VDS
4.0
V
Gate to Source Voltage
VGS
−3.0
V
Drain Current
ID
IDSS
mA
Gate Current
IG
100
µA
Total Power Dissipation
Ptot
125
mW
Channel Temperature
Tch
125
°C
Storage Temperature
Tstg
−65 to +125
°C
The information in this document is subject to change without notice.
Document No. P13682EJ1V0DS00 (1st edition)
Date Published August 1998 N CP(K)
Printed in Japan
©
1998
NE4210M01
RECOMMENDED OPERATING CONDITION (TA = 25 °C)
Characteristic
TYP.
MAX.
Unit
VDS
2
3
V
Drain Current
ID
10
20
mA
Input Power
Pin
+5
dBm
Drain to Source Voltage
Symbol
MIN.
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
Parameter
Symbol
Test Conditions
Gate to Source Leak Current
IGSO
VGS = −3 V
Saturated Drain Current
IDSS
VDS = 2 V, VGS = 0 V
TYP.
MAX.
Unit
0.5
10
µA
20
60
90
mA
−2.0
V
VGS(off)
VDS = 2 V, ID = 100 µA
−0.2
−0.7
Transconductance
gm
VDS = 2 V, ID = 10 mA
50
65
Noise Figuer
NF
f = 12 GHz
Gate to Source Cutoff Voltage
f = 4 GHz
Associated Gain
Ga
VDS = 2 V
ID = 10 mA
f = 12 GHz
f = 4 GHz
2
MIN.
Preliminary Data Sheet
0.8
mS
1.1
dB
0.4
9.0
11.0
16.0
dB
NE4210M01
PACKAGE DIMENSIONS
6 pin super minimold (Unit: mm)
-0.1
0.2 -0
1.25 ±0.1
2.1 ±0.1
0.1 to
-0.1
0.15 -0
0 to 0.1
0.65
0.7
0.65
0.9 ±0.1
1.3
2.0 ±0.2
PIN CONNECTIONS
3
2
1
V73
(Top View)
(Bottom View)
4
4
3
5
5
2
6
6
1
Preliminary Data Shee
Pin No.
Pin Name
1
Gate
2
Source
3
Source
4
Drain
5
Source
6
Source
3
NE4210M01
TYPICAL CHARACTERISTICS (TA = 25 °C)
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
100
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
80
200
ID - Drain Current - mA
Ptot - Total Power Dissipation - mW
250
150
100
60
–0.2 V
40
–0.4 V
20
50
0
VGS = 0 V
–0.6 V
50
100
150
200
250
0
1
2
3
5
4
TA - Ambient Temperature - ˚C
VDS - Drain to Source Voltage - V
DRAIN CURRENT vs.
GATE TO SOURCE VOLTAGE
MAXIMUM AVAILABLE GAIN, FORWARD
INSERTION GAIN vs. FREQUENCY
24
40
20
0
–2.0
–1.0
0
MSG. - Maximum Stable Gain - dB
MAG. - Maximum Available Gain - dB
|S21s|2 - Forward Insertion Gain - dB
ID - Drain Current - mA
VDS = 2 V
60
VDS = 2 V
ID = 10 mA
20
MSG.
16
|S21S|2
MAG.
12
8
VGS - Gate to Source Voltage - V
4
1
2
4
6
8 10
f - Frequency - GHz
4
Preliminary Data Sheet
14
20 30
NE4210M01
Gain Calculations
S21
MAG. =
S21
K=
S12
2 S12S21
∆ = S11 • S22 − S21 • S12
(K ± √K2 − 1)
NOISE FIGURE, ASSOCIATED GAIN vs.
FREQUENCY
20
VDS = 2 V
ID = 10 mA
Ga
NF - Noise Figure - dB
S12
1 + ∆2−S112−S222
2.0
16
1.5
12
1.0
8
0.5
4
Ga - Associated Gain - dB
MSG. =
NF
0
1
0
2
4
6
8 10
14
20 30
f - Frequency - GHz
Preliminary Data Shee
5
NE4210M01
S-PARAMETER
MAG. AND ANG.
VDS = 2 V, ID = 10 mA
FREQUENCY
MHz
6
S11
S21
S12
S22
MAG.
ANG.
(deg.)
MAG.
ANG.
(deg.)
MAG.
ANG.
(deg.)
MAG.
ANG.
(deg.)
500
.991
−10.4
4.511
169.7
.011
85.4
.657
−8.4
1000
.992
−20.7
4.520
159.7
.021
74.5
.652
−16.9
1500
.991
−31.0
4.523
149.2
.032
69.3
.648
−25.2
2000
.948
−42.3
4.439
136.4
.041
58.9
.610
−31.8
2500
.926
−53.4
4.392
125.5
.050
51.3
.592
−40.6
3000
.893
−64.5
4.318
114.5
.058
42.9
.565
−49.3
3500
.859
−74.8
4.215
104.1
.064
36.5
.545
−57.0
4000
.829
−85.0
4.104
94.2
.070
29.0
.524
−64.6
4500
.798
−93.5
3.997
84.9
.074
22.1
.507
−71.7
5000
.769
−102.4
3.926
75.7
.078
15.9
.493
−78.5
5500
.738
−111.5
3.876
66.5
.082
9.3
.472
−85.2
6000
.679
−116.9
3.847
59.7
.085
5.7
.458
−87.3
6500
.667
−130.4
3.845
49.0
.091
−1.8
.415
−95.9
7000
.641
−144.4
3.817
38.5
.094
−8.6
.373
−105.7
7500
.615
−158.6
3.831
27.2
.099
−16.7
.349
−115.0
8000
.584
−173.6
3.776
16.0
.102
−25.4
.312
−126.4
8500
.553
172.1
3.692
5.0
.103
−33.8
.270
−139.3
9000
.530
157.4
3.603
−5.8
.103
−40.5
.235
−152.6
9500
.507
142.4
3.510
−16.9
.103
−48.3
.209
−165.6
10000
.484
126.9
3.408
−28.0
.103
−56.2
.171
177.0
10500
.482
110.3
3.270
−38.7
.103
−64.0
.139
160.7
11000
.487
92.5
3.176
−49.0
.101
−72.2
.142
133.6
11500
.536
73.8
3.109
−59.7
.100
−78.2
.164
114.7
12000
.562
52.8
3.085
−70.0
.102
−86.5
.173
103.7
12500
.617
37.3
2.994
−83.7
.101
−97.5
.173
81.1
13000
.604
21.9
2.744
−95.6
.096
−106.1
.186
44.2
13500
.602
14.7
2.534
−106.8
.090
−114.9
.240
18.9
14000
.625
4.6
2.361
−117.9
.085
−121.8
.299
11.5
14500
.647
−5.6
2.208
−128.8
.087
−129.4
.342
7.0
15000
.667
−15.3
2.034
−138.9
.085
−139.0
.373
−0.1
15500
.683
−23.9
1.926
−148.4
.080
−148.7
.391
−5.5
16000
.714
−32.6
1.808
−160.0
.076
−153.4
.435
−8.3
16500
.739
−41.9
1.649
−170.7
.079
−161.1
.471
−15.9
17000
.765
−48.5
1.535
178.1
.075
−170.4
.509
−25.0
17500
.788
−56.1
1.372
165.7
.078
179.9
.552
−35.3
18000
.808
−62.6
1.177
155.3
.069
173.2
.580
−46.4
Preliminary Data Sheet
NE4210M01
AMP. PARAMETERS
VDS = 2 V, ID = 10 mA
FREQUENCY
MHz
GUmax
GAmax
dB
dB
|S21|2
|S12|2
K
Delay
Mason’s U
ns
dB
G1
G2
dB
dB
dB
dB
500
33.06
13.09
−39.20
.08
.056
17.52
2.46
1000
33.41
13.10
−33.38
.08
.056
17.91
2.40
1500
33.04
13.11
−30.02
.05
.058
17.57
2.36
2000
24.87
12.95
−27.78
.27
.071
29.694
9.91
2.02
2500
23.16
12.85
−26.03
.31
.060
30.116
8.43
1.88
3000
21.30
12.71
−24.80
.39
.061
26.913
6.93
1.67
3500
19.84
12.50
−23.86
.46
.057
26.284
5.82
1.53
4000
18.70
12.26
−23.15
.52
.055
24.591
5.04
1.40
4500
17.73
12.03
−22.64
.59
.052
23.052
4.41
1.29
5000
16.98
11.88
−22.20
.64
.051
22.477
3.89
1.21
5500
16.28
11.77
−21.70
.70
.051
21.636
3.42
1.10
6000
15.40
11.70
−21.36
.82
.038
19.846
2.68
1.02
6500
15.07
11.70
−20.80
.81
.059
20.495
2.55
.82
7000
14.59
11.63
−20.51
.84
.058
20.840
2.30
.65
7500
14.29
11.67
−20.09
.86
.063
21.341
2.06
.56
8000
13.80
11.54
−19.83
.90
.062
20.755
1.81
.45
8500
13.26
11.35
−19.72
.96
.061
19.703
1.59
.33
9000
12.81
14.49
11.13
−19.77
1.02
.060
19.158
1.43
.25
9500
12.39
13.55
10.91
−19.75
1.08
.062
18.458
1.29
.19
10000
11.94
12.77
10.65
−19.73
1.16
.062
17.507
1.16
.13
10500
11.53
12.18
10.29
−19.76
1.22
.059
16.739
1.15
.09
11000
11.30
11.92
10.04
−19.94
1.26
.057
16.388
1.18
.09
11500
11.44
12.24
9.85
−19.96
1.19
.060
17.722
1.47
.12
12000
11.56
12.49
9.79
−19.83
1.15
.057
18.798
1.65
.13
12500
11.74
12.86
9.53
−19.96
1.10
.076
20.502
2.08
.13
13000
10.90
11.29
8.77
−20.34
1.30
.066
16.279
1.98
.15
13500
10.29
10.44
8.08
−20.92
1.47
.062
14.380
1.95
.26
14000
10.02
10.15
7.46
−21.39
1.52
.061
13.882
2.16
.41
14500
9.78
9.97
6.88
−21.24
1.48
.060
13.926
2.36
.54
15000
9.37
9.60
6.17
−21.43
1.50
.056
13.389
2.55
.65
15500
9.14
9.43
5.70
−21.90
1.55
.053
13.022
2.73
.72
16000
9.15
9.57
5.14
−22.40
1.50
.065
13.301
3.09
.91
16500
8.86
9.44
4.35
−22.09
1.40
.059
13.591
3.43
1.09
17000
8.85
9.67
3.72
−22.44
1.32
.062
14.276
3.82
1.30
17500
8.54
9.84
2.75
−22.19
1.19
.069
15.550
4.22
1.58
18000
7.78
8.72
1.42
−23.28
1.37
.058
12.630
4.58
1.78
Preliminary Data Shee
7
NE4210M01
NOISE PARAMETER
VDS = 2 V, ID = 10 mA
Γopt.
Freq. (GHz)
8
NFmin. (dB)
Ga (dB)
Rn/50
MAG.
ANG. (deg.)
2.0
0.38
18.2
0.82
37
0.36
4.0
0.39
16.3
0.64
67
0.26
6.0
0.47
14.6
0.48
101
0.17
8.0
0.56
13.5
0.38
142
0.09
10.0
0.66
12.3
0.25
−167
0.09
12.0
0.80
11.0
0.24
−92
0.15
14.0
0.94
10.0
0.42
−12
0.39
16.0
1.19
9.2
0.58
30
0.71
18.0
1.48
8.0
0.66
66
1.18
Preliminary Data Sheet
NE4210M01
RECOMMENDED SOLDERING CONDITIONS
This product should be soldered under the following recommended conditions.
For soldering methods and
conditions other than those recommended below, contact your NEC sales representative.
Soldering Metod
Infrared Reflow
Soldering Conditions
Package peak temperature: 230 °C or below
Recommended
Condtion Symbol
IR30-00-2
Time: 30 seconds or less (at 210 °C)
Count: 2, Exposure limitNote: None
Package peak temperature: 215 °C or below
VPS
VP15-00-2
Time: 40 seconds or less (at 200 °C)
Count: 2, Exposure limitNote: None
Wave Soldering
Soldering bath temperature: 260 °C or below
WS60-00-1
Time: 10 seconds or less
Count: 1, Exposure limitNote: None
Partial Heating
Pin temperature: 230 °C
Time: 10 seconds or less (per pin row)
Exposure limit
Note
–
Note
: None
After opening the dry pack, keep it in a place below 25 °C and 65 % RH for the allowable storage period.
Caution
Do not use different soldering methods together (except for partial heating).
PRECAUTION
Avoid high static voltage and electric fields, because this device is Hetero Junction field
effect transistor with shottky barrier gate.
For more details, refer to our document “SEMICONDUCTOR DEVICE MOUNTING TECHNOLOGY MANUAL”
(C10535E).
Preliminary Data Shee
9
NE4210M01
[MEMO]
10
Preliminary Data Sheet
NE4210M01
[MEMO]
Preliminary Data Shee
11
NE4210M01
CAUTION
The Great Care must be taken in dealing with the devices in this guide.
The reason is that the material of the devices is GaAs (Gallium Arsenide), which is
designated as harmful substance according to the law concerned.
Keep the law concerned and so on, especially in case of removal.
No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this
document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from use of a device described herein or any other liability arising
from use of such device. No license, either express, implied or otherwise, is granted under any patents,
copyrights or other intellectual property rights of NEC Corporation or others.
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
NEC devices are classified into the following three quality grades:
"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on
a customer designated "quality assurance program" for a specific application. The recommended applications
of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each
device before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact an NEC sales representative in advance.
Anti-radioactive design is not implemented in this product.
M4 96. 5