PRELIMINARY DATA SHEET NPN SILICON EPITAXIAL TWIN TRANSISTOR FEATURES OUTLINE DIMENSIONS • SMALL PACKAGE OUTLINE: 1.5 mm x 1.1 mm, 33% smaller than conventional SOT-363 package • LOW HEIGHT PROFILE: Just 0.55 mm high • (Units in mm) Package Outline TC (TOP VIEW) 1.50±0.1 1.10±0.1 FLAT LEAD STYLE: Reduced lead inductance improves electrical performance • UPA831TC TWO DIFFERENT DIE TYPES: Q1 - Ideal oscillator transistor Q2 - Ideal buffer amplifier transistor 0.20 +0.1 -0.05 1.50±0.1 1 6 2 5 3 4 PIN OUT 1. Collector (Q1) 2. Emitter (Q1) 3. Collector (Q2) 4. Base (Q2) 5. Emitter (Q2) 6. Base (Q1) 0.48 0.96 0.48 DESCRIPTION 0.11+0.1 The UPA831TC contains one NE856 and one NE681 NPN high frequency silicon bipolar chip. NEC's new ultra small TC package is ideal for all portable wireless applications where reducing board space is a prime consideration. Each transistor chip is independently mounted and easily configured for oscillator/buffer amplifier and other applications. -0.05 0.55±0.05 Note: Pin 1 is the lower left most pin as the package lettering is oriented and read left to right. ELECTRICAL CHARACTERISTICS (TA = 25°C) PART NUMBER PACKAGE OUTLINE SYMBOLS PARAMETERS AND CONDITIONS UNITS ICBO Collector Cutoff Current at VCB = 10 V, IE = 0 µA 1 IEBO Emitter Cutoff Current at VEB = 1 V, IC = 0 µA 1 Q1 hFE Q2 UPA831TC TC fT DC Current Gain1 at VCE = 3 V, IC = 7 mA Gain Bandwidth at VCE = 3 V, IC = 7 mA, f = 1 GHz Cre Feedback Capacitance2 at VCB = 3 V, lE = 0, f = 1 MHz |S21E|2 dB Noise Figure at VCE = 3 V, IC = 7 mA, f = 1 GHz dB ICBO Collector Cutoff Current at VCB = 10 V, IE = 0 µA IEBO Emitter Cutoff Current at VEB = 1 V, IC = 0 µA hFE DC Current Gain1 at VCE = 3 V, IC = 7 mA 140 0.7 7 GHz Feedback Capacitance2 at VCB = 3 V, IE = 0, f = 1 MHz pF |S21E|2 Insertion Power Gain at VCE = 3 V, IC =7 mA, f = 1 GHz dB Noise Figure at VCE = 3 V, IC = 7 mA, f = 1 GHz dB MAX 4.5 1.5 9 1.2 2.5 0.8 0.8 70 Cre NF 3.0 pF Insertion Power Gain at VCE = 3 V, IC =7 mA, f = 1 GHz Gain Bandwidth at VCE = 3 V, IC = 7 mA, f = 1 GHz TYP 70 GHz NF fT MIN 150 4.5 7.0 10 12 0.9 1.4 2.7 Notes: 1. Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %. 2. Collector to base capacitance when measured with capacitance meter (automatic balanced bridge method), with emitter connected to guard pin of capacitances meter. California Eastern Laboratories UPA831TC ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C) SYMBOLS PARAMETERS UNITS RATINGS Q1 Q2 20 VCBO Collector to Base Voltage V 20 VCEO Collector to Emitter Voltage V 12 10 VEBO Emitter to Base Voltage V 3 1.5 65 IC Collector Current mA 100 PT Total Power Dissipation1 mW TBD TBD TBD TJ Junction Temperature °C 150 TSTG Storage Temperature °C -65 to +150 ORDERING INFORMATION PART NUMBER UPA831TC-T1 QUANTITY 3000 PACKAGING Tape & Reel 150 Note: 1. Operation in excess of any one of these parameters may result in permanent damage. EXCLUSIVE NORTH AMERICAN AGENT FOR RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279 24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) • Internet: http://WWW.CEL.COM 1/99 DATA SUBJECT TO CHANGE WITHOUT NOTICE