PRELIMINARY DATA SHEET NPN SILICON TRANSISTOR NE688M03 OUTLINE DIMENSIONS (Units in mm) FEATURES • • HIGH GAIN BANDWIDTH PRODUCT: fT = 9.5 GHz • LOW NOISE FIGURE: NF = 1.7 dB at 2 GHz 1.2±0.05 0.8±0.1 2 1.4 ±0.1 0.45 (0.9) TS • PACKAGE OUTLINE M03 NEW M03 PACKAGE: • Smallest transistor outline package available • Low profile/0.59 mm package height • Flat lead style for better RF performance 0.45 HIGH COLLECTOR CURRENT: ICMAX = 100 mA 0.3±0.1 3 1 0.2±0.1 DESCRIPTION The NE688M03 transistor is designed for low cost amplifier and oscillator applications. Low noise figure, high gain and high current capability equate to wide dynamic range and excellent linearity. NEC's new low profile/flat lead style "M03" package is ideal for today's portable wireless applications. The NE688 is also available in chip and six different low cost plastic surface mount package styles. 0.59±0.05 +0.1 0.15 -0.05 PIN CONNECTIONS 1. Emitter 2. Base 3. Collector ELECTRICAL CHARACTERISTICS (TA = 25°C) PART NUMBER EIAJ1 REGISTERED NUMBER PACKAGE OUTLINE SYMBOLS PARAMETERS AND CONDITIONS NE688M03 2SC5437 M03 UNITS MIN TYP GHz GHz 4 5 9.5 fT Gain Bandwidth at VCE = 1 V, IC = 3 mA, f = 2 GHz VCE = 3 V, IC = 20 mA, f = 2 GHz NF Noise Figure at VCE = 1 V, IC = 3 mA, f = 2 GHz VCE = 3 V, IC = 7 mA, f = 2 GHz dB dB Insertion Power Gain at VCE = 1 V, IC = 3 mA, f = 2 GHz VCE = 3 V, IC = 20 mA, f = 2 GHz dB dB |S21E|2 1.9 1.7 3 MAX 2.5 4 8 hFE2 Forward Current Gain at VCE = 1 V, IC = 3 mA ICBO Collector Cutoff Current at VCB = 5 V, IE = 0 µA 0.1 IEBO Emitter Cutoff Current at VEB = 1 V, IC = 0 µA 0.1 CRE3 Feedback Capacitance at VCB = 1 V, IE = 0, f = 1 MHz pF 80 145 0.7 0.8 Notes: 1. Electronic Industrial Association of Japan. 2. Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %. 3. Capacitance is measured with emitter and case connected to the guard terminal at the bridge. California Eastern Laboratories NE688M03 NONLINEAR MODEL SCHEMATIC Q1 CCBPKG CCB LCX LBX Collector LB Base CCE CCEPKG LE LEX Emitter BJT NONLINEAR MODEL PARAMETERS (1) UNITS Parameter Units Parameters Q1 Parameters Q1 time seconds IS 3.8e-16 MJC 0.48 capacitance farads BF 135.7 XCJC 0.56 inductance henries NF 1 CJS 0 resistance ohms VAF 28 VJS 0.75 voltage volts IKF 0.6 MJS 0 current amps ISE 3.8e-15 FC 0.75 NE 1.49 TF 11e-12 BR 12.3 XTF 0.36 NR 1.1 VTF 0.65 VAR 3.5 ITF 0.61 IKR 0.06 PTF 50 ISC 3.5e-16 TR 32e-12 NC 1.62 EG 1.11 RE 0.4 XTB 0 RB 6.14 XTI 3 RBM 3.5 KF 1.5e-14 IRB 0.001 AF 1.22 RC 4.2 CJE 0.796e-12 VJE 0.71 MJE 0.38 CJC 0.549e-12 VJC 0.65 (1) Gummel-Poon Model ADDITIONAL PARAMETERS Parameters 688M03 CCB 0.24e-12 CCE 0.27e-12 LB 0.5e-9 LE 0.6e-9 CCBPKG 0.08e-12 CCEPKG 0.08e-12 LBX 0.12e-9 LCX 0.10e-9 LEX 0.12e-9 MODEL RANGE Frequency: 0.1 to 5.0 GHz Bias: VCE = 0.5 V to 3 V, IC = 0.5 mA to 10 mA Date: 11/98 NE688M03 ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C) SYMBOLS PARAMETERS UNITS RATINGS VCBO Collector to Base Voltage V 9 VCEO Collector to Emitter Voltage V 6 VEBO Emitter to Base Voltage V 2 IC Collector Current mA 100 PT Total Power Dissipation mW 125 TJ Junction Temperature °C 150 TSTG Storage Temperature °C -65 to +150 Note: 1. Operation in excess of any one of these parameters may result in permanent damage. TYPICAL PERFORMANCE CURVES (TA = 25°C) COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE D.C. CURRENT GAIN vs. COLECTOR CURRENT 200 30 VCE = 1 V 25 180 µA 20 140 µA DC Current Gain, hFE Collector Current, IC (mA) 200 µA 160 µA 120 µA 15 100 µA 80 µA 10 60 µA 100 40 µA 5 IB = 20 µA 0 0 0 5 2.5 7 Collector to Emmiter Voltage, VCE (V) 0.1 0.2 0.5 1 2 5 10 20 50 100 Collector Current, IC (mA) COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE 100 VCE = 1 V Collector Current, IC (mA) 50 20 10 5 2 1 0.5 0.2 0.1 0.05 0.02 0.01 0 0.5 1 Base to Emmiter Voltage, VBE (V) Life Support Applications These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and agree to fully indemnify CEL for all damages resulting from such improper use or sale. EXCLUSIVE NORTH AMERICAN AGENT FOR NEC RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279 Internet: http://WWW.CEL.COM DATA SUBJECT TO CHANGE WITHOUT NOTICE 06/10/2002