PRELIMINARY DATA SHEET NPN SILICON HIGH FREQUENCY TRANSISTOR UPA808TC FEATURES DESCRIPTION • SMALL PACKAGE OUTLINE: 1.5 mm x 1.1 mm, 33% smaller than conventional SOT-363 package • LOW HEIGHT PROFILE Just 0.55 mm high • FLAT LEAD STYLE: Reduced lead inductance improves electrical performance The UPA808TC contains two NE687 NPN high frequency silicon bipolar chips. NEC's new ultra small TC package is ideal for all portable wireless applications where reducing board space is a prime consideration. Each transistor chip is independently mounted and easily configured for two stage cascode LNAs and other applications. • HIGH COLLECTOR CURRENT: IC MAX = 65 mA OUTLINE DIMENSIONS (Units in mm) PACKAGE OUTLINE TC (Top View) ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C) SYMBOLS PARAMETERS UNITS RATINGS VCBO Collector to Base Voltage V 20 VCEO Collector to Emitter Voltage V 10 VEBO Emitter to Base Voltage V 1.5 1.50±0.1 1.10±0.1 -0.05 1.50±0.1 IC Collector Current mA 65 PT Total Power Dissipation 1 Die 2 Die mW mW TBD TBD 0.20 +0.1 0.48 1 6 2 5 3 4 0.96 TJ Junction Temperature °C 150 TSTG Storage Temperature °C -65 to +150 0.48 PIN OUT 1. Collector Q1 2. Emitter Q1 3. Collector Q2 4. Emitter Q2 5. Base Q2 6. Base Q1 0.11+0.1 Note: 1. Operation in excess of any one of these parameters may result in permanent damage. -0.05 0.55±0.05 ELECTRICAL CHARACTERISTICS (TA = 25°C) PART NUMBER PACKAGE OUTLINE SYMBOLS PARAMETERS AND CONDITIONS UPA808TC TC UNITS ICBO Collector Cutoff Current at VCB = 10 V, IE = 0 µA IEBO Emitter Cutoff Current at VEB = 1 V, IC = 0 µA hFE Forward Current Gain1 at VCE = 3 V, IC = 7 mA fT Gain Bandwidth at VCE = 3 V, IC = 7 mA GHz Feedback Capacitance2 at VCB = 3 V, IE = 0, f = 1 MHz pF |S21E|2 Insertion Power Gain at VCE = 3 V, IC = 7 mA, f = 1 GHz dB Noise Figure at VCE = 3 V, IC = 7 mA, f = 1 GHz dB TYP MAX 0.1 0.1 70 Cre NF MIN 9 100 11 0.4 7 140 0.8 8.5 1.3 2 Notes: 1.Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %. 2.The emitter terminal should be connected to the ground terminal of the 3 terminal capacitance bridge. For Tape and Reel version use part number UPA808TC-T1, 3K per reel. California Eastern Laboratories UPA808TC NONLINEAR MODEL BJT NONLINEAR MODEL PARAMETERS (1) Parameters Q1, Q2 Parameters Q1, Q2 IS 8e-17 MJC 0.53 1 BF 128 XCJC NF 1 CJS 0 VAF 17 VJS 0.75 IKF 0.18 MJS 0 ISE 3.3e-15 FC 0.37 NE 1.48 TF 8e-12 BR 9.05 XTF 11.9 NR 1.05 VTF 9.55 VAR 4.3 ITF 1.78 IKR 0.009 PTF 69.1 ISC 4e-15 TR 1e-9 NC 1.5 EG 1.11 RE 0.8 XTB 0 RB 11.1 XTI 3 RBM 2.46 KF 0 IRB 0.017 AF 1 RC 7.5 CJE 0.415e-12 VJE 0.68 MJE 0.53 CJC 0.102e-12 VJC 0.29 (1) Gummel-Poon Model Note: This nonlinear model utilized the latest data available. See our Design Parameter Library at www.cel.com for this data. UNITS Parameter time capacitance inductance resistance voltage current Units seconds farads henries ohms volts amps MODEL RANGE Frequency: 0.1 to 7.0 GHz Bias: VCE = 0.5 V to 2 V, IC = 0.5 mA to 10 mA Date: 02/01 UPA808TC SCHEMATIC 0.07 pF C_C1B2 0.1 pF CCBPKG1 Pin_1 LC 0.26 pF 0.05 nH CCB1 C_C1E1 0.05 pF Pin_2 CCE1 0.19 pF LE LE1 0.05 nH 0.95 nH Q1 LC LB 0.45 nH 0.05 nH C_E1B2 0.1 pF LB2 C_E1C2 0.05 pF Pin_3 LB1 C_B1B2 0.05 pF LB 0.05 nH 0.7 nH CCB2 0.26 pF Pin_5 C_B2E2 0.05 pF Q2 LE2 0.8 nH 0.05 nH Pin_6 LE 0.05 nH Pin_4 0.19 pF CCE2 0.1 pF CCEPKG2 0.06 pF CCBPKG2 MODEL RANGE Frequency: 0.1 to 7.0 GHz Bias: VCE = 0.5 V to 2 V, IC = 0.5 mA to 10 mA Date: 02/01 Life Support Applications These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and agree to fully indemnify CEL for all damages resulting from such improper use or sale. EXCLUSIVE NORTH AMERICAN AGENT FOR NEC RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279 Internet: http://WWW.CEL.COM DATA SUBJECT TO CHANGE WITHOUT NOTICE 12/11/2001