PRELIMINARY DATA SHEET NPN SILICON TRANSISTOR NE680M03 OUTLINE DIMENSIONS (Units in mm) FEATURES • PACKAGE OUTLINE M03 NEW M03 PACKAGE: • Smallest transistor outline package available • Low profile/0.59 mm package height • Flat lead style for better RF performance HIGH GAIN BANDWIDTH PRODUCT: fT = 8 GHz • LOW NOISE FIGURE: NF = 1.9 dB at 2 GHz 0.8±0.1 2 1.4 ±0.1 0.45 (0.9) 0.45 TH • 1.2±0.05 0.3±0.1 3 1 0.2±0.1 DESCRIPTION The NE680M03 transistor is designed for low noise, high gain, and low cost applications. This high fT part is ideal for low voltage/low current applications. NEC's new low profile/flat lead style "M03" package is ideal for today's portable wireless applications. The NE680 is also available in chip, Micro-x, and six different low cost plastic surface mount package styles. 0.59±0.05 +0.1 0.15 -0.05 Note: 1. This dimension was changed effective 04/2000 from 1.4 mm to 1.2 mm. Products with "04" or a higher number indicated for month of manufacture in lot numbers have the new dimension. PIN CONNECTIONS 1. Emitter 2. Base 3. Collector Example of Lot No. Identification 0 6 xxxxxxx In-company control code Month of manufacture (Example: Jan. = 1, Feb. = 2, etc. Oct. = X, Nov. = Y, Dec. = Z) Year of manufacture (Last digit of year, 2000 = 0) ELECTRICAL CHARACTERISTICS (TA = 25°C) PART NUMBER EIAJ1 REGISTERED NUMBER PACKAGE OUTLINE SYMBOLS PARAMETERS AND CONDITIONS NE680M03 2SC5434 M03 UNITS MIN GHz 5.5 fT Gain Bandwidth at VCE = 3 V, IC = 5 mA, f = 2 GHz NF Noise Figure at VCE = 3 V, IC = 6 mA, f = 2 GHz dB Insertion Power Gain at VCE = 3 V, IC = 5 mA, f = 2 GHz dB |S21E|2 TYP 8.0 1.9 5.5 MAX 3.2 7.5 hFE2 Forward Current Gain at VCE = 3 V, IC = 5 mA ICBO Collector Cutoff Current at VCB = 10 V, IE = 0 µA 1.0 IEBO Emitter Cutoff Current at VEB = 1 V, IC = 0 µA 1.0 CRE3 Feedback Capacitance at VCB = 3 V, IE = 0, f = 1 MHz pF 80 145 0.3 0.7 Notes: 1. Electronic Industrial Association of Japan. 2. Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %. 3. Capacitance is measured with emitter and case connected to the guard terminal at the bridge. California Eastern Laboratories NE680M03 NONLINEAR MODEL SCHEMATIC Q1 CCBPKG CCB LCX LBX Collector LB Base CCE CCEPKG LE LEX Emitter BJT NONLINEAR MODEL PARAMETERS (1) Parameters Q1 Parameters Q1 UNITS Parameter Units time seconds farads IS 5.98e-16 MJC 0.15 capacitance BF 179 XCJC 1 inductance henries NF 1.04 CJS 0 resistance ohms VAF 17 VJS 0.75 voltage volts IKF 0.02 MJS 0 current amps ISE 1.0e-6 FC 0.5 NE 30 TF 8.7e-12 BR 16 XTF 20 NR 1.04 VTF 0.3 VAR 100 ITF 0.04 IKR 6.85e-3 PTF 120 ISC 1.5e-9 TR 0.635e-9 NC 20 EG 1.11 RE 0.50 XTB 0 RB 8.54 XTI 3 RBM 2 KF 0 IRB 4e-4 AF 1 RC 10 CJE 0.358e-12 VJE 0.86 MJE 0.5 CJC 0.162e-12 VJC 0.52 (1) Gummel-Poon Model ADDITIONAL PARAMETERS Parameters 680M03 CCB 0.08e-12 CCE 0.08e-12 LB 0.4e-9 LE 0.8e-9 CCBPKG 0.08e-12 CCEPKG 0.08e-12 LBX 0.12e-9 LCX 0.10e-9 LEX 0.12e-9 MODEL RANGE Frequency: 0.1 to 3.0 GHz Bias: VCE = 0.5 V to 6 V, IC = 0.5 mA to 15 mA Date: 11/98 NE680M03 ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C) SYMBOLS PARAMETERS UNITS RATINGS VCBO Collector to Base Voltage V 20 VCEO Collector to Emitter Voltage V 10 VEBO Emitter to Base Voltage V 1.5 IC Collector Current mA 35 PT Total Power Dissipation mW 125 TJ Junction Temperature °C 150 TSTG Storage Temperature °C -65 to +150 Note: 1. Operation in excess of any one of these parameters may result in permanent damage. TYPICAL PERFORMANCE CURVES (TA = 25°C) FORWARD CURRENT GAIN vs. COLECTOR CURRENT COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE 500 35 DC Forward Current Gain, hFE Collector Current, IC (mA) VCE = 6 V 25 15 5 300 200 100 70 50 30 20 10 0 2 4 6 8 Collector to Emitter Voltage, VCE (V) 10 1 2 3 5 7 10 20 30 50 Collector Current, IC (mA) Life Support Applications These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and agree to fully indemnify CEL for all damages resulting from such improper use or sale. EXCLUSIVE NORTH AMERICAN AGENT FOR NEC RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279 Internet: http://WWW.CEL.COM DATA SUBJECT TO CHANGE WITHOUT NOTICE 06/10/2002