DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT µPC2723T 1.1 GHz AGC AMPLIFIER FOR DBS TUNER AND MOBILE TELEPHONE FEATURES • • • • • Wide frequency response – fu = 1.1 GHzTYP @ – 3 dB GPMAX. Maximum power gain – GPMAX. = 13 dBTYP Single supply voltage: 5 V, 15 mA TYP. AGC Dynamic range: GCR = 38 dB TYP. @ f = 500 MHz Packaged in 6 pins mini mold suitable for high-density surface mounting. DESCRIPTION The µPC2723T is a silicon monolithic integrated circuit designed for miniature AGC amplifier. This amplifier realizes Auto gain control with external control circuit. This IC operates up to 1.1 GHz and therefore is suitable for DBS tuner, mobile telephone and other applications. The µPC2723T is manufactured using NEC’s 20 GHz fT NESAT™ III silicon bipolar process. This process uses silicon nitride passivation film and gold metallization wirings. These materials can protect the chips from external pollution and prevent corrosion/migration. Thus, this IC has excellent performance, uniformity and reliability. ORDER INFORMATION ORDER NUMBER PACKAGE µPC2723T–E3 6pin mini mold SUPPLYING FORM MARKING Embossed tape 8mm wide. 3kp/reel. Pin1, 2, 3 face to perforation side of the tape. C1M Remarks To order evaluation samples, please contact your local NEC sales office. (Order number: µPC2723T) PIN CONNECTIONS 3 2 1 C1M (Top View) (Bottom View) 4 1. INPUT 2. GND 4 3 5 3. OUTPUT 4. V CC 5. V AGC 5 2 6 1 6 6. INPUT Caution: Electro-static sensitive device Document No. P10922EJ2V0DS00 (2nd edition) (Previous No. ID-3258) Date Published November 1995 P Printed in Japan © 1995 µPC2723T ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATING UNIT CONDITION Supply Voltage VCC 6.0 V T A = +25 °C AGC Control Voltage V AGC 6.0 mA T A = +25 °C Total Power Dissipation PD 280 mW Mounted on double sided copper 50 × 50 × 1.6 mm epoxy glass PWB (TA = +85 °C) Operating Temperature T opt –40 to +85 °C Storage Temperature Tstg –55 to +150 °C Input Power Pin 0 dBm T A = +25 °C RECOMMENDED OPERATING CONDITIONS PARAMETER SYMBOL MIN. TYP. MAX. UNIT Supply Voltage VCC 4.5 5 5.5 V Operating Temperature T opt –40 +25 +85 °C ELECTRICAL CHARACTERISTICS (TA = 25 °C, VCC = 5 V, ZS = ZL = 50 Ω) PARAMETER SYMBOL MIN. TYP. MAX. UNIT ICC 11 15 19 mA No signal GPMAX. 9.5 13 14.5 dB f = 500 MHz NF – 11 13.5 dB f = 500 MHz, at GPMAX. fu 0.8 1.1 – GHz GCR 33 38 – dB f = 500 MHz, V AGC = 0 to 5.0 V Isolation ISL 32 37 – dB f = 500 MHz, at G PMAX. Input Return Loss RLin 9 12 – dB f = 500 MHz, at GPMAX. Output Return Loss RL out 2 4 – dB f = 500 MHz, at G PMAX. Maximum Output PO(sat) –5 –2 – dBm Circuit Current Maximum Power Gain Noise Figure Upper Limit Operating Frequency AGC Dynamic Range 2 CONDITION 3 dB down below flat gain f = 0.1 GHz at G PMAX. f = 500 MHz, Pin = –5 dBm at GPMAX. µPC2723T PIN DESCRIPTIONS Pin No. Symbol 1 IN 2 Assignment Functions and Explanation Input bypass pin Must be connected bypass capacitor (e.g. 1 500 pF) to minimize ground impedance. GND Ground pin Must be connected to the system ground with minimum inductance. Ground pattern on the board should be formed as wide as possible. (Track length should be kept as short as possible) 3 OUT Output pin Must be coupled with capacitor (e.g. 1 500 pF) for DC cut. 4 VCC Power supply pin Supply voltage 5.0 ± 0.5 V for operation. Must be connected bypass capacitor (e.g. 1 500 pF) to minimize ground impedance. 5 VAGC AGC control pin Can be used for auto gain control. The control can be governed by supply voltage to this pin. AGC performance can be adjustable by RAGC value. (e.g. 15 Ω). 6 IN Input pin Input frequency from an external VCO output. Must be coupled with capacitor (e.g. 1 500 pF). 3 µPC2723T TEST CIRCUIT VCC Tantalum capacitor C4 VAGC 1 500 pF 50 Ω 0.68 µF 1 500 pF C3 C5 RAGC 1kΩ 1 500 pF IN 6 C6 1 500 pF 5 1 500 pF 4 3 2 1 50 Ω OUT C2 C1 INTERNAL BLOCK DIAGRAM VAGC LEVEL SHIFTER RFIN RFOUT IN (BYPASS) AGC AMP 4 LEVEL SHIFTER µPC2723T TYPICAL CHARACTERISTICS (TA = +25 °C) ICC – VCC ICC – Topt 20 20 ICC – Circuit Current – mA ICC – Circuit Current – mA VAGC = 1.0 V No input signal 15 10 5 1 0 2 3 4 5 10 –40 6 VCC – Supply Voltage – V VCC = 5.0 V VAGC = 1.0 V No input signal –20 0 20 NF, GP – f VCC = 5.0 V VAGC = 1.0 V VCC = 5.0 V VCC = 4.5 V 10 5 0 0.1 1.0 GP – Maximum Power Gain – dB GP – Maximum Power Gain – dB 15 15 TA = +25 °C 0.1 10 20 GP – Power Gain – dB 40 15 kΩ –10 –20 VCC = 5.0 V f = 500 MHz 0 2 3.0 GP – f GP – VAGC RAGC =1 kΩ 1.0 f – Frequency – GHz 20 0 TA = +85 °C 5 0 0.01 3.0 TA = –40 °C VCC = 5.0 V VAGC = 1.0 V 10 f – Frequency – GHz –30 80 GP – f GPMAX. VCC = 5.5 V –5 0.01 5 GP – Power Gain – dB NF – Noise Figure – dB 10 60 20 20 15 40 Topt – Operating Temperature – °C 4 VAGC – AGC Control Voltage – V 6 VCC = 5.0 V VAGC = 3.3 V VAGC = 3.6 V 0 VAGC = 3.68 V VAGC = 3.71 V –20 VAGC = 3.8 V –40 –60 0.01 0.1 1.0 3.0 f – Frequency – GHz 5 µPC2723T RL in, RLout – f ISL – f 0 RLin – Input Return Loss – dB RLout – Output Return Loss – dB –20 ISL – Isolation – dB 0 VCC = 5.0 V –40 –60 –80 –100 0.01 0.1 1.0 VCC = 5.0 V –10 RLout –20 RLin –30 –40 0.01 3.0 0.1 f – Frequency – GHz 0 f = 500 MHz VAGC = 1.0 V at GPMAX. f = 500 MHz VCC = 5.0 V PO – Output Power – dBm PO – Output Power – dBm 0 VCC = 5.5 V –10 VCC = 5.0 V –20 VCC = 4.5 V –30 –40 –40 –30 –20 –10 0 –10 –20 –30 –40 –50 –60 10 PO(sat) – Saturated Output Power – dBm PO(sat) – f 5 VCC = 5.5 V 0 VCC = 5.0 V VCC = 4.5 V –5 0.1 f – Frequency – GHz 6 1.0 –40 –20 0 20 P in – Input Power – dBm 3.0 PO – Output Power – dBm IM3 – 3rd Order Intermodulation Distortion – dBm Pin – Input Power – dBm –10 0.01 3.0 PO – Pin AGC Operation PO – Pin Manual Gain Control 10 1.0 f – Frequency – GHz PO, IM3 – Pin +20 0 Pout –20 –40 IM3 –60 –80 –100 –50 –40 –30 –20 –10 Pin – Input Power – dBm 0 0.4 1 0.0 9 0.37 0.13 0.8 1.4 1.2 1.0 0.9 0.40 0.10 –11 0 0.38 0.39 0.12 0.11 –100 –90 0.36 0.04 –80 0.35 0.15 – 1.6 0 –70 4 0.3 6 0.1 3 0.3 7 0.1 –6 0.6 1.8 2.0 0.4 –1 0.2 12 0 0.7 5 ( 0.8 0.4 0 2 . 0 8 0 00 .43 0. 07 30 0. 0.6 3. 0 NE GA T 0. 0. 31 19 32 18 0. ) 1. 0 ENT ON MP CO CE AN T AC – JX –– RE ––ZO E IV 0 40 1. –1 20 0. 06 0. 50 20 10 5.0 4.0 3.0 2.0 1.8 1.6 1.4 1.2 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 ( 0.3 0 1. ) 0. 4 10 0.2 POS 14 ITIV 0 ER EA CT A ––+JX NCE ZO–– CO M P 44 0. 2.0 5 0. 0.6 1.8 1.6 0.2 1.0 0.9 0.8 1.4 0.7 1.4 1.2 1.0 0.9 0.8 1.6 0.7 0.6 1.8 2.0 5 0. ( E NC TA AC – JX –– RE ––ZO E IV ) 0 1. ) 0.4 0.6 0. 8 3. 0 1. 0 4.0 6.0 0.1 0.4 0.2 3.0 G ) 0.4 0. 8 0.26 0.24 0 0.37 0.13 –1 0.2 06 REACTANCE COMPONENT R –––– 0.2 ZO 0.2 8 0.2 2 –20 4.0 NE GA T 0.4 0. 0.8 0.4 5 5 0 0 1. 15 50 20 10 5.0 4.0 3.0 2.0 1.8 1.6 1.4 1.2 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 20 0.25 0.25 0.6 0.27 0.23 0 –4 44 10 –10 6.0 0.40 0.10 0.38 0.39 0.12 0.11 –100 –90 0.36 0.04 –80 0.35 0.15 7 0.4 O REF 3 6 0.0GTHS TANGLE OF 0.4 4 VELEN –160 0 . A 0 5 W 0.4 5 0 5 –1 0.0 44 0. 06 40 ENT ON MP 0. –1 CO 10 0.0 20 ( 15 6 0 0.0 0.4 5 5 0 1. ) POS 14 ITIV 0 ER EA CT A ––+JX NCE ZO–– CO M P 0.2 6.0 0 REACTANCE COMPONENT R –––– 0.2 ZO 50 –11 0 –70 4 0.3 6 0.1 3 0.3 7 0.1 0.4 0. 8 0.6 6 0.6 10 20 0.24 0.23 0.26 2 0.2 0.27 8 10 0.2 20 0 0.4 1 0.2 9 0.2 0 O REF 3 6 0.0GTHS TANGLE OF 0.4 4 ELEN –160 0.0WAV 0 5 –1 50 0. 0.1 0.3 7 3 0.2 00 9 0.2 0.3 1 –3 0.2 0 0 0 –5 0 0.4 1 0.0 9 0.4 0.0 2 8 0 00 .43 0. 07 30 0 –1 2 –6 0.1 0.2 600 0 0.1 6 0.3 4 32 18 0. 70 0. 0.15 0.35 0 0.8 30 5 0.4 5 0.0 0.6 0 4 WAVELE NGTH S 0.02 TOWARD 0.0 GENE 0.48 3 RA FCIENT 0.4 0.0TOR IN DE 7 4 GRE 0.4 ES 4.0 0.26 0.24 3. 0. 8 0.2 0 0.01 0.49 0.48 0 0.49 0.01 0.0W2ARD LOADLECTION COEF 0 0.25 0.25 S22 – FREQUENCY 0.14 0.36 80 0.2 0 0.1 0 0.24 0.26 T EN ON 3. 2 0.13 0.37 0.23 0.27 90 4.0 0.3 0.8 0.2 WAVELE NGTH S 0.02 TOWARD 0.0 GENE 0.48 3 RA FCIENT 0.4 0.0TOR IN DE 7 4 GRE 0.4 ES 0.6 0.3 ( 0.12 0.38 40 0.1 G 0.11 0.39 100 19 0. 31 0. 0 0.01 0.49 0.48 0 0.49 0.01 0.0W2ARD LOADLECTION COEF 0.4 0.27 0.2 0.23 8 0.2 2 –20 8 0.0 2 0.4 20 1 0.10 0.40 110 0. 0. 0. 06 44 2.0 5 0.6 1.8 50 0. 0. 31 19 9 0.0 1 0.4 –5 0.2 1.6 0.2 1.0 0.9 0.8 1.4 0.7 0.1 0.3 7 3 –10 0.01 G 600 0 0.2 0.1 6 0.3 4 10 ( 70 8 20 0.1 0 4 0. 1. 0.2 3.0 G 0.15 0.35 1 0.2 9 0.2 4 –4 0.3 T EN ON 0.14 0.36 80 0.2 00 9 0.2 0.3 1 – 0.2 0 0 0. 43 0 13 0 30 0. 12 30 07 2 90 0 0.2 0 0.3 0.2 0. 0.4 40 0.3 07 0. 3 4 0. 0 13 0.13 0.37 6.0 0 1 0.4 0.12 0.38 50 .08 0.11 0.39 100 0.6 0 0.10 0.40 110 0. .09 19 0. 31 0. .47 µPC2723T S PARAMETER (VCC = 5.0 V) S11 – FREQUENCY 0. 0. 18 32 50 0. 0. 18 32 50 7 µPC2723T ILLUSTRATION OF THE TEST CIRCUIT ASSEMBLED ON EVALUATION BOARD VCC C4 C3 R AGC OUT VAGC C5 C2 C6 C1 µPC2723T Component List 8 No. Value C1 to 3 1 500 pF C4 0.68 pF C5 to 6 1 500 pF RAGC 1 kΩ Note (1) 50×50×0.4 mm double copper clad polyimide board. (2) Back side: GND pattern (3) Solder plated on pattern (4) ● ● : Through holes IN µPC2723T TYPICAL SYSTEM APPLICATION DBS Tuner Block Diagram DC AMP DET 1st IF Input RF Amp ATT RF Amp MIX. IF Amp Sound Visual From O.D.U. µPC2723T µ PC2726T FM DEMO. PLL VCO LPF 900 MHz Band Digital Cellular Block Diagram (5 V System) 1st MIX. Low Noise Tr 2nd MIX. RX DEMO. VCO SW PLL I Q PLL I 0˚ TX F/F PA 90˚ Driver µPC2723T Q The application circuits and their parameters are for references only and are not intended for use in actual design-in's. 9 µPC2723T 6 PINS MINI MOLD PACKAGE DIMENSIONS (Unit : mm) +0.1 0.3 –0.05 2 3 +0.2 1.5 –0.1 +0.2 2.8 –0.3 1 0 to 0.1 6 5 4 0.95 0.95 1.9 2.9±0.2 10 0.13±0.1 0.8 +0.2 1.1 –0.1 µPC2723T NOTE ON CORRECT USE (1) Observe precautions for handling because of electro-static sensitive devices. (2) Form a ground pattern as wide as possible to minimize ground impedance (to prevent undesired oscillation). (3) Keep the wiring length of the ground pins as short as possible. (4) Connect a bypass capacitor (e.g. 1 000 pF) to the VCC pin. RECOMMENDED SOLDERING CONDITIONS This product should be soldered in the following recommended conditions. Other soldering methods and conditions than the recommended conditions are to be consulted with our sales representatives. µPC2723T Soldering method Infrared ray reflow VPS Wave soldering Pin part heating Soldering conditions Recommended condition symbol Package peak temperature: 235 °C, Hour: within 30 s. (more than 210 °C), Time: 2 times, Limited days: no.* IR35–00-2 Package peak temperature: 215 °C, Hour: within 40 s. (more than 200 °C), Time: 2 times, Limited days: no.* VP15–00-2 Soldering tub temperature: less than 260 °C, Hour: within 10 s. Time: 1 time, Limited days: no. WS60–00-1 Pin area temperature: less than 300 °C, Hour: within 3 s/pin. Limited days: no.* *: It is the storage days after opening a dry pack, the storage conditions are 25 °C, less than 65 % RH. Note 1. The combined use of soldering method is to be avoided (However, except the pin area heating method). For details of recommended soldering conditions for surface mounting, refer to information document SEMICONDUCTOR DEVICE MOUNTING TECHNOLOGY MANUAL (IEI-1207). 11 µPC2723T ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC SENSITIVE DEVICES No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: “Standard“, “Special“, and “Specific“. The Specific quality grade applies only to devices developed based on a customer designated “quality assurance program“ for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices in “Standard“ unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact NEC Sales Representative in advance. Anti-radioactive design is not implemented in this product. M4 94.11 NESAT (NEC Silicon Advanced Technology) is a trademark of NEC Corporation. 14