DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT µPC2710T 5 V, MINIMOLD SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER DESCRIPTION The µPC2710T is a silicon monolithic integrated circuits designed as PA driver for 900 MHz band cellular telephone tuners. This IC is packaged in minimold package. This IC is manufactured using NEC’s 20 GHz fT NESATTM lll silicon bipolar process. This process uses silicon nitride passivation film and gold electrodes. These materials can protect chip surface from external pollution and prevent corrosion/migration. Thus, this IC has excellent performance, uniformity and reliability. FEATURES • • • • • Supply voltage Wideband response Medium output power Power gain Port impedance : VCC = 4.5 to 5.5 V : fu = 1.0 GHz TYP. @ 3 dB bandwidth : PO(sat) = +13.5 dBm TYP. @ f = 500 MHz with external inductor : GP = 33 dB TYP. @ f = 500 MHz : input/output 50 Ω APPLICATION • PA driver for PDC900M ORDERING INFORMATION Part Number µPC2710T-E3 Remark Package 6-pin minimold Marking Supplying Form C1F Embossed tape 8 mm wide. 1, 2, 3 pins face to perforation side of the tape. Qty 3 kp/reel To order evaluation samples, please contact your local NEC sales office. (Part number for sample order: µPC2710T) Caution Electro-static sensitive devices The information in this document is subject to change without notice. Document No. P12427EJ3V0DS00 (3rd edition) Date Published September 1998 N CP(K) Printed in Japan © 1994 µPC2710T PIN CONNECTIONS (Bottom View) C1F (Top View) 3 2 1 4 4 3 5 5 2 6 6 1 Pin No. Pin Name 1 INPUT 2 GND 3 GND 4 OUTPUT 5 GND 6 VCC PRODUCT LINE-UP OF µPC2710 (TA = +25°C, VCC = Vout = 5.0 V, ZL = ZS = 50 Ω ) Part No. fu (GHz) PO(sat) (dBm) GP (dB) NF (dB) ICC (mA) 1.0 +13.5 33 3.5 22 µPC2710T µPC2710TB Package Marking 6-pin minimold C1F 6-pin super minimold Remark Typical performance. Please refer to ELECTRICAL CHARACTERISTICS in detail. Notice The package size distinguishes between minimold and super minimold. SYSTEM APPLICATION EXAMPLE EXAMPLE OF 900 MHz BAND DIGITAL CELLULER TELEPHONE RX DEMO PLL SW I Q PLL 0° I Driver TX PA µ PC2710T/TB φ 90° Q 2 µPC2710T PIN EXPLANATION Pin Name Applied Voltage V 1 INPUT – 4 OUTPUT Pin No. 6 2 3 5 VCC GND Voltage as same as VCC through external inductor 4.5 to 5.5 0 Pin Voltage V Note Function and Applications 0.90 Signal input pin. A internal matching circuit, configured with resistors, enables 50 Ω connection over a wide band. A multi-feedback circuit is designed to cancel the deviations of hFE and resistance. This pin must be coupled to signal source with capacitor for DC cut. – Signal output pin. The inductor must be attached between VCC and output pins to supply current to the internal output transistors. Internal Equivalent Circuit 6 VCC 4 OUT IN 1 – – Power supply pin, which biases the internal input transistor. This pin should be externally equipped with bypass capacitor to minimize its impedance. 3 GND 2 5 GND Ground pin. This pin should be connected to system ground with minimum inductance. Ground pattern on the board should be formed as wide as possible. All the ground pins must be connected together with wide ground pattern to decrease impedance difference. Note Pin voltage is measured at VCC = 5.0 V 3 µPC2710T ABSOLUTE MAXIMUM RATINGS Parameter Symbol Conditions Ratings Unit Supply Voltage VCC TA = +25°C, Pin 4 and 6 5.8 V Total Circuit Current ICC TA = +25°C 60 mA Power Dissipation PD Mounted on double copper clad 50 × 50 × 1.6 mm epoxy glass PWB (TA = +85°C) 280 mW Operating Ambient Temperature TA −40 to +85 °C Storage Temperature Tstg −55 to +150 °C Input Power Pin +10 dBm TA = +25°C RECOMMENDED OPERATING CONDITIONS Parameter Symbol MIN. TYP. MAX. Unit Notice Supply Voltage VCC 4.5 5.0 5.5 V The same voltage should be applied to pin 4 and 6. Operating Ambient Temperature TA −40 +25 +85 °C ELECTRICAL CHARACTERISTICS (TA = +25°°C, VCC = Vout = 5.0 V, ZS = ZL = 50 Ω) Parameter Test Conditions MIN. TYP. MAX. Unit Circuit Current ICC No Signal 16 22 29 mA Power Gain GP f = 500 MHz 30 33 36.5 dB f = 500 MHz, Pin = –8 dBm +11 +13.5 – dBm – 3.5 5.0 dB 3 dB down below flat gain at f = 0.1 GHz 0.7 1.0 – GHz Maximum Output Level Noise Figure Upper Limit Operating Frequency 4 Symbol PO(sat) NF fu f = 500 MHz Isolation ISL f = 500 MHz 34 39 – dB Input Return Loss RLin f = 500 MHz 3 6 – dB Output Return Loss RLout f = 500 MHz 9 12 – dB Gain Flatness ∆GP f = 0.1 to 0.6 GHz – ±0.8 – dB µPC2710T TEST CIRCUIT VCC 1 000 pF C3 L 6 50 Ω C1 IN C2 4 1 1 000 pF 50 Ω OUT 1 000 pF 2, 3, 5 COMPONENTS OF TEST CIRCUIT FOR MEASURING ELECTRICAL EXAMPLE OF ACTURAL APPLICATION COMPONENTS CHARACTERISTICS Type Value C3 Capacitor 1 000 pF L Bias Tee 1 000 nH C1 to C2 Bias Tee 1 000 pF Type Value Operating Frequency C1 to C3 Chip Capacitor 1 000 pF 100 MHz or higher L Chip Inductor 300 nH 10 MHz or higher 100 nH 100 MHz or higher 10 nH 1.0 GHz or higher INDUCTOR FOR THE OUTPUT PIN The internal output transistor of this IC consumes 20 mA, to output medium power. To supply current for output transistor, connect an inductor between the VCC pin (pin 6) and output pin (pin 4). Select large value inductance, as listed above. The inductor has both DC and AC effects. In terms of DC, the inductor biases the output transistor with minimum voltage drop to output enable high level. In terms of AC, the inductor make output-port impedance higher to get enough gain. In this case, large inductance and Q is suitable. CAPACITORS FOR THE VCC, INPUT AND OUTPUT PINS Capacitors of 1000 pF are recommendable as the bypass capacitor for the VCC pin and the coupling capacitors for the input and output pins. The bypass capacitor connected to the VCC pin is used to minimize ground impedance of VCC pin. So, stable bias can be supplied against VCC fluctuation. The coupling capacitors, connected to the input and output pins, are used to cut the DC and minimize RF serial impedance. Their capacitance are therefore selected as lower impedance against a 50 Ω load. The capacitors thus perform as high pass filters, suppressing low frequencies to DC. To obtain a flat gain from 100 MHz upwards, 1000 pF capacitors are used in the test circuit. In the case of under 10 MHz operation, increase the value of coupling capacitor such as 10000 pF. Because the coupling capacitors are determined by equation, C = 1/(2 πRfc). 5 µPC2710T ILLUSTRATION OF THE TEST CIRCUIT ASSEMBLED ON EVALUATION BOARD 3 Top View 1 2 IN OUT C 6 5 L 4 C 1F C Mounting Direction VCC C COMPONENT LIST Value C 1 000 pF L 300 nH Notes 1. 30 × 30 × 0.4 mm double sided copper clad polyimide board. 2. Back side: GND pattern 3. Solder plated on pattern 4. : Through holes For more information on the use of this IC, refer to the following application note: USAGE AND APPLICATION OF SILICON MEDIUM-POWER HIGH-FREQUENCY AMPLIFIER MMIC (P12152E). 6 µPC2710T TYPICAL CHARACTERISTICS (Unless otherwise specified, TA = +25°C) CIRCUIT CURRENT vs. OPERATING AMBIENT TEMPERATURE CIRCUIT CURRENT vs. SUPPLY VOLTAGE 40 40 35 35 ICC – Circuit Current – mA ICC – Circuit Current – mA VCC = 5.0 V 30 25 20 15 10 25 20 15 10 5 5 0 30 1 2 3 4 5 0 –60 –40 –20 6 NOISE FIGURE AND INSERTION POWER GAIN vs. FREQUENCY INSERTION POWER GAIN vs. FREQUENCY VCC = 4.5 V GP 30 VCC = 5.5 V NF VCC = 4.5 V VCC = 5.0 V 0.3 1.0 TA = –40°C TA = +25°C 30 25 0.1 2.0 TA = +85°C 0.3 1.0 f – Frequency – GHz f – Frequency – GHz ISOLATION vs. FREQUENCY INPUT RETURN LOSS, OUTPUT RETURN LOSS vs.FREQUENCY 0 0 RLin – Input Return Loss – dB RLout – Output Return Loss – dB VCC = 5.0 V –10 –20 –30 –40 –50 0.1 VCC = 5.0 V GP – Insertion Power Gain – dB GP – Insertion Power Gain – dB 35 VCC = 5.5 V VCC = 5.0 V 25 0.1 3 ISL – Isolation – dB NF – Noise Figure – dB 35 3.5 +20 +40 +60 +80 +100 TA – Operating Ambient Temperature – °C VCC – Supply Voltage – V 4 0 0.3 f – Frequency – GHz 1.0 2.0 2.0 VCC = 5.0 V –10 –20 RLin RLout –30 –40 –50 0.1 0.3 1.0 2.0 f – Frequency – GHz 7 µPC2710T OUTPUT POWER vs. INPUT POWER OUTPUT POWER vs. INPUT POWER +20 +20 PO – Output Power – dBm PO – Output Power – dBm f = 0.5 GHz +15 +10 VCC = 5.5 V VCC = 5.0 V +5 VCC = 4.5 V 0 –5 –10 +15 +10 TA = +25°C +5 0 –5 –15 –40 –35 –30 –25 –20 –15 –10 –5 +5 +10 OUTPUT POWER vs. INPUT POWER +5 +10 OUTPUT POWER vs. INPUT POWER +20 f = 1.0 GHz VCC = 5.0 V VCC = 5.0 V VCC = 5.5 V +15 PO – Output Power – dBm PO – Output Power – dBm 0 Pin – Input Power – dBm +20 +10 +5 0 VCC = 4.5 V –5 –10 +15 f = 0.5 GHz +10 f = 1.0 GHz +5 0 –5 –10 –15 –40 –35 –30 –25 –20 –15 –10 –5 0 –15 –40 –35 –30 –25 –20 –15 –10 –5 +5 +10 SATURATED OUTPUT POWER vs. FREQUENCY +20 Pin = –8 dBm +18 VCC = 5.5 V +16 VCC = 5.0 V +14 +12 VCC = 4.5 V +10 +8 0.2 0.5 f – Frequency – GHz 0 +5 +10 Pin – Input Power – dBm 1 2 IM3 – 3rd Order Intermodulation Distortion – dBc Pin – Input Power – dBm PO(sat) – Saturated Output Power – dBm TA = –40°C 0 Pin – Input Power – dBm 8 TA = +85°C –10 –15 –40 –35 –30 –25 –20 –15 –10 –5 +6 0.1 VCC = 5.0 V f = 0.5 GHz THIRD ORDER INTERMODULATION DISTORTION vs. OUTPUT POWER OF EACH TONE –60 f1 = 0.500 GHz f2 = 0.502 GHz –50 VCC = 5.0 V –40 VCC = 5.5 V –30 –20 VCC = 4.5 V –10 –10 –8 –6 –4 –2 0 +2 +4 +6 +8 +10 PO(each) – Output Power of Each Tone – dBm –90 0 1.6 0.7 1.4 1.2 1.0 0.9 –11 0.35 0.15 –70 0.36 0.04 –80 0.37 0.13 0.38 0.39 0.12 0.11 –100 0.40 0.10 0.4 1 0.0 0.4 9 0 2 –1 .08 0 00 .43 0. 07 30 1.8 2.0 –1 0.2 20 0.8 0.6 0 0.6 5 0 1. 0.2 0.8 3. 0 50 20 0 1. 0.6 10 5.0 4.0 3.0 2.0 1.8 1.6 1.4 1.2 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 2.0 5 0. 0.6 1.8 50 0. 0. 31 19 NE G 0.4 0 –4 4 0.3 6 3 0.1 0.3 7 0.1 60 32 – 0. 8 1 0. 0 –5 1.6 0.2 1.0 0.9 0.8 1.4 0.7 1.4 1.2 1.0 0.9 1.6 0.7 – 0.8 0.6 1.8 2.0 5 0. ( ) 0 1. 1.6 1.4 1.2 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 50 20 10 5.0 4.0 3.0 0 1. 0.2 6.0 REACTANCE COMPONENT R –––– 0.2 ZO ( ) 0.4 8 0.5 G 1. 0 4.0 6.0 0.1 0.4 0.1 G ( ) 0.4 0. 8 0.5 G 0.25 0.25 3. E NC TA AC – JX –– RE ––ZO O N ( –Z–+–J–XTANCE CO ) MPO 4.0 1. 0 0.2 8 0.2 2 –20 0.8 4.0 0.37 0.13 –1 0.2 N 0.2 0.1 0.3 7 3 0.27 0.23 ( E IV AT 0 20 0.26 0.24 6.0 O 4 0.6 0.1 0.4 0.2 20 10 1. 0 0.8 0.3 ( –Z–+–J–XTANCE CO ) MPO 600 0.2 9 0 0 0.2 0.3 1 –3 0.2 0 0 0 0. REACTANCE COMPONENT R ––– 0.2 ZO 50 0.4 1 0.0 9 0.38 0.39 0.12 0.11 –100 –90 0.36 0.04 –80 0.35 0.15 12 0 0.4 0 2 . 0 8 0 00 .43 0. 07 30 –70 NE G 0.4 0.2 1. –10 ) 0 0 0.6 0.1 6 0.3 4 10 20 0. 8 0.6 0.24 0.23 0.26 2 0.2 0.27 8 10 0.2 20 E NC TA AC – JX –– RE ––ZO 0. 0. 4 0.2 WAVEL 8 ENGT HS 0 0.01 0.49 0.02 TOWARD 0.48 0 0.49 0.01 0.0 GENE 7 0.48 3 RA 0.4 0.02 0.4 REFLECTION COEFFCIENT IN 0.0TOR 3 6 7 LE OF DEG 0.0 4 ANG 0.4 R 0 E 0.4 ES 0 16 4 – 0 . 6 0.0 0 5 15 0.4 5 0 .4 5 50 0 1 0 – 5 0. 0. 4 0 4 POS 0.1 14 0.4 6 0. 06 40 ENT ITIV ON 0 ER 4 MP 0. –1 EA CO C 0.6 3. 0 0.40 0.10 –11 0 70 4 0.3 6 3 0.1 0.3 7 0.1 60 32 – 0. 8 1 0. 0 –5 0.15 0.35 1 0.2 9 0.2 30 0.2 0.14 0.36 80 0 0.2 0 0.3 E IV AT 0.4 40 0.1 4.0 90 19 0. 31 0. T EN 3. 0.25 0.25 0.13 0.37 10 0.6 0.2 8 0.2 2 –20 0. 0.27 0.23 WAVEL 0.4 0.26 0.24 0.12 0.38 0.1 G 2.0 5 0. 0.6 1.8 50 –10 0 1 0.4 0.2 1.6 0.2 1.0 0.9 0.8 1.4 0.7 0.1 0.3 7 3 0 . 2 00 9 0.2 0.3 1 0 –3 0 0 .08 0.11 0.39 100 600 0 0.6 0.1 6 0.3 4 0. 0. 31 19 0 0.10 0.40 110 70 10 20 0.24 0.23 0.26 2 0.2 0.27 8 10 0.2 20 0.2 0.15 0.35 1 0 .2 9 0.2 0. 0.3 0.8 30 0.1 0 4 T EN 0.14 0.36 80 .20 0. –4 S22-FREQUENCY .09 0.13 0.37 0 0 .2 0 4 90 0 .3 0.3 0. 0.12 0.38 40 0.3 07 43 0. 0 13 0.11 0.39 100 6.0 0. 8 0.0 2 0.4 20 1 0.10 0.40 110 50 9 0.0 1 0.4 19 0. 31 0. 2 0.4 20 1 07 0. 3 4 0. 0 13 ENGT HS 0 0.01 0.49 0.02 TOWARD 0.48 0 0.49 0.01 0.0 GENE 7 0.48 3 RA 0.4 0.02 0.4 REFLECTION COEFFCIENT IN 0.0TOR 3 6 7 LE OF DEG 0.0 4 ANG 0.4 R 0 E 0.4 ES 0 16 4 – 0 . 6 0.0 0 5 15 0.4 5 0.4 5 50 0 1 0 – 5 0. 0. 4 0 4 POS 0.1 14 0.4 6 0. 06 40 ENT ITIV ON 0 ER 4 MP 0. –1 EA CO C µPC2710T S-PARAMETER (VCC = Vout = 5.0 V) S11-FREQUENCY 0. 0. 18 32 50 0. 0. 18 32 50 9 µPC2710T TYPICAL S-PARAMETER VALUES (TA = +25°C) µ PC2710T VCC = Vout = 5.0 V, ICC = 21 mA FREQUENCY MHz MAG ANG MAG ANG MAG ANG MAG ANG 100.0000 200.0000 300.0000 400.0000 500.0000 600.0000 700.0000 800.0000 900.0000 1000.0000 1100.0000 1200.0000 1300.0000 1400.0000 1500.0000 .322 .346 .383 .429 .465 .486 .487 .468 .423 .392 .349 .301 .257 .217 .184 –0.3 3.3 2.1 –1.7 –9.4 –17.8 –27.2 –36.5 –44.5 –50.3 –56.6 –61.0 –63.2 –63.5 –59.9 37.668 38.808 40.192 41.567 42.130 42.282 41.075 39.129 35.399 32.933 30.025 26.823 23.836 21.128 18.841 –5.9 –17.0 –28.0 –40.4 –54.1 –68.3 –83.2 –97.9 –111.7 –123.4 –135.5 –146.8 –156.8 –165.9 –174.2 .013 .012 .009 .009 .012 .013 .013 .013 .013 .014 .014 .015 .016 .016 .017 17.1 19.8 22.5 25.1 27.8 30.5 33.1 35.8 38.5 41.2 43.9 46.6 49.2 51.6 54.5 .200 .208 .231 .258 .273 .305 .319 .320 .297 .260 .240 .216 .192 .173 .155 –11.7 –15.4 –23.5 –34.2 –47.2 –60.9 –77.8 –96.2 –115.4 –128.2 –142.2 –156.3 –169.7 176.0 162.3 10 S11 S21 S12 S22 K 1.06 1.07 1.21 1.10 0.86 0.79 0.82 0.89 1.04 1.10 1.22 1.31 1.40 1.56 1.65 µPC2710T PACAGE DIMENSIONS 6 pin minimold (Unit: mm) +0.1 0.3 –0.05 2 3 +0.2 1.5 –0.1 +0.2 2.8 –0.3 1 0.13±0.1 0 to 0.1 6 5 4 0.95 0.95 1.9 0.8 +0.2 1.1 –0.1 2.9±0.2 11 µPC2710T NOTES ON CORRECT USE (1) Observe precautions for handling because of electro-static sensitive devices. (2) Form a ground pattern as wide as possible to minimize ground impedance (to prevent undesired oscillation). All the ground pins must be connected together with wide ground pattern to decrease impedance difference. (3) The bypass capacitor should be attached to VCC line. (4) The inductor must be attached between VCC and output pins. The inductance value should be determined in accordance with desired frequency. (5) The DC cut capacitor must be attached to input pin. RECOMMENDED SOLDERING CONDITIONS This product should be soldered under the following recommended conditions. For soldering methods and conditions other than those recommended below, contact your NEC sales representative. µPC2710T Soldering Method Soldering Conditions Recommended Condition Symbol Infrared Reflow Package peak temperature: 235°C or below Time: 30 seconds or less (at 210°C) Count: 3, Exposure limitNote: None IR35-00-3 VPS Package peak temperature: 215°C or below Time: 40 seconds or less (at 200°C) Count: 3, Exposure limitNote: None VP15-00-3 Wave Soldering Soldering bath temperature: 260°C or below Time: 10 seconds or less Count: 1, Exposure limitNote: None WS60-00-1 Partial Heating Pin temperature: 300°C Time: 3 seconds or less (per side of device) Exposure limitNote: None – Note After opening the dry pack, keep it in a place below 25°C and 65% RH for the allowable storage period. Caution Do not use different soldering methods together (except for partial heating). For details of recommended soldering conditions for surface mounting, refer to information document SEMICONDUCTOR DEVICE MOUNTING TECHNOLOGY MANUAL (C10535E). 12 µPC2710T [MEMO] 13 µPC2710T [MEMO] 14 µPC2710T [MEMO] 15 µPC2710T NESAT (NEC Silicon Advanced Technology) is a trademark of NEC Corporation. No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. Anti-radioactive design is not implemented in this product. M4 96. 5