ETC UPC2710T-E3

DATA SHEET
BIPOLAR ANALOG INTEGRATED CIRCUIT
µPC2710T
5 V, MINIMOLD SILICON MMIC
MEDIUM OUTPUT POWER AMPLIFIER
DESCRIPTION
The µPC2710T is a silicon monolithic integrated circuits designed as PA driver for 900 MHz band cellular
telephone tuners. This IC is packaged in minimold package.
This IC is manufactured using NEC’s 20 GHz fT NESATTM lll silicon bipolar process. This process uses silicon
nitride passivation film and gold electrodes. These materials can protect chip surface from external pollution and
prevent corrosion/migration. Thus, this IC has excellent performance, uniformity and reliability.
FEATURES
•
•
•
•
•
Supply voltage
Wideband response
Medium output power
Power gain
Port impedance
: VCC = 4.5 to 5.5 V
: fu = 1.0 GHz TYP. @ 3 dB bandwidth
: PO(sat) = +13.5 dBm TYP. @ f = 500 MHz with external inductor
: GP = 33 dB TYP. @ f = 500 MHz
: input/output 50 Ω
APPLICATION
• PA driver for PDC900M
ORDERING INFORMATION
Part Number
µPC2710T-E3
Remark
Package
6-pin minimold
Marking
Supplying Form
C1F
Embossed tape 8 mm wide.
1, 2, 3 pins face to perforation side of the tape.
Qty 3 kp/reel
To order evaluation samples, please contact your local NEC sales office. (Part number for sample order:
µPC2710T)
Caution
Electro-static sensitive devices
The information in this document is subject to change without notice.
Document No. P12427EJ3V0DS00 (3rd edition)
Date Published September 1998 N CP(K)
Printed in Japan
©
1994
µPC2710T
PIN CONNECTIONS
(Bottom View)
C1F
(Top View)
3
2
1
4
4
3
5
5
2
6
6
1
Pin No.
Pin Name
1
INPUT
2
GND
3
GND
4
OUTPUT
5
GND
6
VCC
PRODUCT LINE-UP OF µPC2710 (TA = +25°C, VCC = Vout = 5.0 V, ZL = ZS = 50 Ω )
Part No.
fu
(GHz)
PO(sat)
(dBm)
GP
(dB)
NF
(dB)
ICC
(mA)
1.0
+13.5
33
3.5
22
µPC2710T
µPC2710TB
Package
Marking
6-pin minimold
C1F
6-pin super minimold
Remark
Typical performance. Please refer to ELECTRICAL CHARACTERISTICS in detail.
Notice
The package size distinguishes between minimold and super minimold.
SYSTEM APPLICATION EXAMPLE
EXAMPLE OF 900 MHz BAND DIGITAL CELLULER TELEPHONE
RX
DEMO
PLL
SW
I
Q
PLL
0°
I
Driver
TX
PA
µ PC2710T/TB
φ
90°
Q
2
µPC2710T
PIN EXPLANATION
Pin Name
Applied
Voltage V
1
INPUT
–
4
OUTPUT
Pin
No.
6
2
3
5
VCC
GND
Voltage
as same
as VCC
through
external
inductor
4.5 to 5.5
0
Pin
Voltage V
Note
Function and Applications
0.90
Signal input pin. A internal
matching circuit, configured
with resistors, enables 50 Ω
connection over a wide band.
A multi-feedback circuit is
designed to cancel the
deviations of hFE and
resistance.
This pin must be coupled to
signal source with capacitor
for DC cut.
–
Signal output pin. The
inductor must be attached
between VCC and output pins
to supply current to the
internal output transistors.
Internal Equivalent Circuit
6 VCC
4 OUT
IN 1
–
–
Power supply pin, which
biases the internal input
transistor.
This pin should be externally
equipped with bypass
capacitor to minimize its
impedance.
3
GND
2 5
GND
Ground pin. This pin should
be connected to system
ground with minimum
inductance. Ground pattern on
the board should be formed
as wide as possible.
All the ground pins must be
connected together with wide
ground pattern to decrease
impedance difference.
Note Pin voltage is measured at VCC = 5.0 V
3
µPC2710T
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Conditions
Ratings
Unit
Supply Voltage
VCC
TA = +25°C, Pin 4 and 6
5.8
V
Total Circuit Current
ICC
TA = +25°C
60
mA
Power Dissipation
PD
Mounted on double copper clad 50 × 50 × 1.6
mm epoxy glass PWB (TA = +85°C)
280
mW
Operating Ambient Temperature
TA
−40 to +85
°C
Storage Temperature
Tstg
−55 to +150
°C
Input Power
Pin
+10
dBm
TA = +25°C
RECOMMENDED OPERATING CONDITIONS
Parameter
Symbol
MIN.
TYP.
MAX.
Unit
Notice
Supply Voltage
VCC
4.5
5.0
5.5
V
The same voltage should be applied
to pin 4 and 6.
Operating Ambient Temperature
TA
−40
+25
+85
°C
ELECTRICAL CHARACTERISTICS (TA = +25°°C, VCC = Vout = 5.0 V, ZS = ZL = 50 Ω)
Parameter
Test Conditions
MIN.
TYP.
MAX.
Unit
Circuit Current
ICC
No Signal
16
22
29
mA
Power Gain
GP
f = 500 MHz
30
33
36.5
dB
f = 500 MHz, Pin = –8 dBm
+11
+13.5
–
dBm
–
3.5
5.0
dB
3 dB down below flat gain at
f = 0.1 GHz
0.7
1.0
–
GHz
Maximum Output Level
Noise Figure
Upper Limit Operating Frequency
4
Symbol
PO(sat)
NF
fu
f = 500 MHz
Isolation
ISL
f = 500 MHz
34
39
–
dB
Input Return Loss
RLin
f = 500 MHz
3
6
–
dB
Output Return Loss
RLout
f = 500 MHz
9
12
–
dB
Gain Flatness
∆GP
f = 0.1 to 0.6 GHz
–
±0.8
–
dB
µPC2710T
TEST CIRCUIT
VCC
1 000 pF
C3
L
6
50 Ω
C1
IN
C2
4
1
1 000 pF
50 Ω
OUT
1 000 pF
2, 3, 5
COMPONENTS OF TEST CIRCUIT
FOR MEASURING ELECTRICAL
EXAMPLE OF ACTURAL APPLICATION COMPONENTS
CHARACTERISTICS
Type
Value
C3
Capacitor
1 000 pF
L
Bias Tee
1 000 nH
C1 to C2
Bias Tee
1 000 pF
Type
Value
Operating Frequency
C1 to C3
Chip Capacitor
1 000 pF
100 MHz or higher
L
Chip Inductor
300 nH
10 MHz or higher
100 nH
100 MHz or higher
10 nH
1.0 GHz or higher
INDUCTOR FOR THE OUTPUT PIN
The internal output transistor of this IC consumes 20 mA, to output medium power. To supply current for output
transistor, connect an inductor between the VCC pin (pin 6) and output pin (pin 4). Select large value inductance, as
listed above.
The inductor has both DC and AC effects. In terms of DC, the inductor biases the output transistor with minimum
voltage drop to output enable high level. In terms of AC, the inductor make output-port impedance higher to get
enough gain. In this case, large inductance and Q is suitable.
CAPACITORS FOR THE VCC, INPUT AND OUTPUT PINS
Capacitors of 1000 pF are recommendable as the bypass capacitor for the VCC pin and the coupling capacitors for
the input and output pins.
The bypass capacitor connected to the VCC pin is used to minimize ground impedance of VCC pin. So, stable bias
can be supplied against VCC fluctuation.
The coupling capacitors, connected to the input and output pins, are used to cut the DC and minimize RF serial
impedance. Their capacitance are therefore selected as lower impedance against a 50 Ω load. The capacitors thus
perform as high pass filters, suppressing low frequencies to DC.
To obtain a flat gain from 100 MHz upwards, 1000 pF capacitors are used in the test circuit. In the case of under
10 MHz operation, increase the value of coupling capacitor such as 10000 pF. Because the coupling capacitors are
determined by equation, C = 1/(2 πRfc).
5
µPC2710T
ILLUSTRATION OF THE TEST CIRCUIT ASSEMBLED ON EVALUATION BOARD
3
Top View
1
2
IN
OUT
C
6
5
L
4
C
1F
C
Mounting Direction
VCC
C
COMPONENT LIST
Value
C
1 000 pF
L
300 nH
Notes
1. 30 × 30 × 0.4 mm double sided copper clad polyimide board.
2. Back side: GND pattern
3. Solder plated on pattern
4.
: Through holes
For more information on the use of this IC, refer to the following application note: USAGE AND APPLICATION OF
SILICON MEDIUM-POWER HIGH-FREQUENCY AMPLIFIER MMIC (P12152E).
6
µPC2710T
TYPICAL CHARACTERISTICS (Unless otherwise specified, TA = +25°C)
CIRCUIT CURRENT vs. OPERATING
AMBIENT TEMPERATURE
CIRCUIT CURRENT vs. SUPPLY VOLTAGE
40
40
35
35
ICC – Circuit Current – mA
ICC – Circuit Current – mA
VCC = 5.0 V
30
25
20
15
10
25
20
15
10
5
5
0
30
1
2
3
4
5
0
–60 –40 –20
6
NOISE FIGURE AND INSERTION POWER
GAIN vs. FREQUENCY
INSERTION POWER GAIN vs. FREQUENCY
VCC = 4.5 V
GP
30
VCC = 5.5 V
NF
VCC = 4.5 V
VCC = 5.0 V
0.3
1.0
TA = –40°C
TA = +25°C
30
25
0.1
2.0
TA = +85°C
0.3
1.0
f – Frequency – GHz
f – Frequency – GHz
ISOLATION vs. FREQUENCY
INPUT RETURN LOSS, OUTPUT
RETURN LOSS vs.FREQUENCY
0
0
RLin – Input Return Loss – dB
RLout – Output Return Loss – dB
VCC = 5.0 V
–10
–20
–30
–40
–50
0.1
VCC = 5.0 V
GP – Insertion Power Gain – dB
GP – Insertion Power Gain – dB
35
VCC = 5.5 V
VCC = 5.0 V
25
0.1
3
ISL – Isolation – dB
NF – Noise Figure – dB
35
3.5
+20 +40 +60 +80 +100
TA – Operating Ambient Temperature – °C
VCC – Supply Voltage – V
4
0
0.3
f – Frequency – GHz
1.0
2.0
2.0
VCC = 5.0 V
–10
–20
RLin
RLout
–30
–40
–50
0.1
0.3
1.0
2.0
f – Frequency – GHz
7
µPC2710T
OUTPUT POWER vs. INPUT POWER
OUTPUT POWER vs. INPUT POWER
+20
+20
PO – Output Power – dBm
PO – Output Power – dBm
f = 0.5 GHz
+15
+10
VCC = 5.5 V
VCC = 5.0 V
+5
VCC = 4.5 V
0
–5
–10
+15
+10
TA = +25°C
+5
0
–5
–15
–40 –35 –30 –25 –20 –15 –10 –5
+5 +10
OUTPUT POWER vs. INPUT POWER
+5 +10
OUTPUT POWER vs. INPUT POWER
+20
f = 1.0 GHz
VCC = 5.0 V
VCC = 5.0 V
VCC = 5.5 V
+15
PO – Output Power – dBm
PO – Output Power – dBm
0
Pin – Input Power – dBm
+20
+10
+5
0
VCC = 4.5 V
–5
–10
+15
f = 0.5 GHz
+10
f = 1.0 GHz
+5
0
–5
–10
–15
–40 –35 –30 –25 –20 –15 –10 –5
0
–15
–40 –35 –30 –25 –20 –15 –10 –5
+5 +10
SATURATED OUTPUT POWER vs.
FREQUENCY
+20
Pin = –8 dBm
+18
VCC = 5.5 V
+16
VCC = 5.0 V
+14
+12
VCC = 4.5 V
+10
+8
0.2
0.5
f – Frequency – GHz
0
+5 +10
Pin – Input Power – dBm
1
2
IM3 – 3rd Order Intermodulation Distortion – dBc
Pin – Input Power – dBm
PO(sat) – Saturated Output Power – dBm
TA = –40°C
0
Pin – Input Power – dBm
8
TA = +85°C
–10
–15
–40 –35 –30 –25 –20 –15 –10 –5
+6
0.1
VCC = 5.0 V
f = 0.5 GHz
THIRD ORDER INTERMODULATION DISTORTION
vs. OUTPUT POWER OF EACH TONE
–60
f1 = 0.500 GHz
f2 = 0.502 GHz
–50
VCC = 5.0 V
–40
VCC = 5.5 V
–30
–20
VCC = 4.5 V
–10
–10 –8 –6 –4 –2
0
+2 +4 +6 +8 +10
PO(each) – Output Power of Each Tone – dBm
–90
0
1.6
0.7
1.4
1.2
1.0
0.9
–11
0.35
0.15
–70
0.36
0.04
–80
0.37
0.13
0.38
0.39
0.12
0.11
–100
0.40
0.10
0.4
1
0.0
0.4
9
0 2
–1 .08
0
00 .43
0.
07
30
1.8
2.0
–1
0.2
20
0.8
0.6
0
0.6
5
0
1.
0.2
0.8
3.
0
50
20
0
1.
0.6
10
5.0
4.0
3.0
2.0
1.8
1.6
1.4
1.2
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
2.0
5
0.
0.6
1.8
50
0.
0. 31
19
NE
G
0.4
0
–4
4
0.3
6
3
0.1
0.3 7
0.1 60
32
–
0. 8
1
0. 0
–5
1.6
0.2
1.0
0.9
0.8
1.4
0.7
1.4
1.2
1.0
0.9
1.6
0.7
–
0.8
0.6
1.8
2.0
5
0.
(
)
0
1.
1.6
1.4
1.2
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
50
20
10
5.0
4.0
3.0
0
1.
0.2
6.0
REACTANCE COMPONENT
R
––––
0.2
ZO
( )
0.4
8
0.5 G
1.
0
4.0
6.0
0.1
0.4
0.1 G
( )
0.4
0.
8
0.5 G
0.25
0.25
3.
E
NC
TA
AC – JX
––
RE
––ZO
O
N
( –Z–+–J–XTANCE CO
) MPO
4.0
1.
0
0.2
8
0.2
2
–20
0.8
4.0
0.37
0.13
–1
0.2
N
0.2
0.1
0.3 7
3
0.27
0.23
(
E
IV
AT
0
20
0.26
0.24
6.0
O
4
0.6
0.1
0.4
0.2
20
10
1.
0
0.8
0.3
( –Z–+–J–XTANCE CO
) MPO
600
0.2
9
0
0
0.2
0.3
1
–3
0.2 0
0
0
0.
REACTANCE COMPONENT
R
–––
0.2
ZO
50
0.4
1
0.0
9
0.38
0.39
0.12
0.11
–100
–90
0.36
0.04
–80
0.35
0.15
12
0
0.4
0 2
.
0
8
0
00 .43
0.
07
30
–70
NE
G
0.4
0.2
1.
–10
)
0
0
0.6
0.1
6
0.3
4
10
20
0.
8
0.6
0.24
0.23
0.26
2
0.2
0.27
8
10
0.2
20
E
NC
TA
AC – JX
––
RE
––ZO
0.
0.
4
0.2
WAVEL
8
ENGT
HS
0
0.01
0.49
0.02 TOWARD
0.48
0
0.49
0.01
0.0 GENE
7
0.48
3
RA
0.4
0.02
0.4
REFLECTION COEFFCIENT IN
0.0TOR
3
6
7
LE OF
DEG
0.0
4
ANG
0.4
R
0
E
0.4
ES
0
16
4
–
0
.
6
0.0
0
5
15
0.4 5
0 .4 5
50
0
1
0
–
5
0.
0.
4
0
4
POS
0.1
14 0.4 6
0. 06 40
ENT
ITIV
ON
0
ER
4
MP
0. –1
EA
CO
C
0.6
3.
0
0.40
0.10
–11
0
70
4
0.3
6
3
0.1
0.3 7
0.1 60
32
–
0. 8
1
0. 0
–5
0.15
0.35
1
0.2
9
0.2
30
0.2
0.14
0.36
80
0
0.2 0
0.3
E
IV
AT
0.4
40
0.1
4.0
90
19
0. 31
0.
T
EN
3.
0.25
0.25
0.13
0.37
10
0.6
0.2
8
0.2
2
–20
0.
0.27
0.23
WAVEL
0.4
0.26
0.24
0.12
0.38
0.1 G
2.0
5
0.
0.6
1.8
50
–10
0
1
0.4
0.2
1.6
0.2
1.0
0.9
0.8
1.4
0.7
0.1
0.3 7
3
0
.
2
00 9
0.2
0.3
1
0
–3
0
0
.08
0.11
0.39
100
600
0
0.6
0.1
6
0.3
4
0.
0. 31
19
0
0.10
0.40
110
70
10
20
0.24
0.23
0.26
2
0.2
0.27
8
10
0.2
20
0.2
0.15
0.35
1
0 .2
9
0.2
0.
0.3
0.8
30
0.1
0
4
T
EN
0.14
0.36
80
.20
0.
–4
S22-FREQUENCY
.09
0.13
0.37
0
0 .2 0
4
90
0 .3
0.3
0.
0.12
0.38
40
0.3
07
43
0. 0
13
0.11
0.39
100
6.0
0.
8
0.0 2
0.4 20
1
0.10
0.40
110
50
9
0.0
1
0.4
19
0. 31
0.
2
0.4 20
1
07
0. 3
4
0. 0
13
ENGT
HS
0
0.01
0.49
0.02 TOWARD
0.48
0
0.49
0.01
0.0 GENE
7
0.48
3
RA
0.4
0.02
0.4
REFLECTION COEFFCIENT IN
0.0TOR
3
6
7
LE OF
DEG
0.0
4
ANG
0.4
R
0
E
0.4
ES
0
16
4
–
0
.
6
0.0
0
5
15
0.4 5
0.4 5
50
0
1
0
–
5
0.
0.
4
0
4
POS
0.1
14 0.4 6
0. 06 40
ENT
ITIV
ON
0
ER
4
MP
0. –1
EA
CO
C
µPC2710T
S-PARAMETER (VCC = Vout = 5.0 V)
S11-FREQUENCY
0.
0.
18
32
50
0.
0.
18
32
50
9
µPC2710T
TYPICAL S-PARAMETER VALUES (TA = +25°C)
µ PC2710T
VCC = Vout = 5.0 V, ICC = 21 mA
FREQUENCY
MHz
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
100.0000
200.0000
300.0000
400.0000
500.0000
600.0000
700.0000
800.0000
900.0000
1000.0000
1100.0000
1200.0000
1300.0000
1400.0000
1500.0000
.322
.346
.383
.429
.465
.486
.487
.468
.423
.392
.349
.301
.257
.217
.184
–0.3
3.3
2.1
–1.7
–9.4
–17.8
–27.2
–36.5
–44.5
–50.3
–56.6
–61.0
–63.2
–63.5
–59.9
37.668
38.808
40.192
41.567
42.130
42.282
41.075
39.129
35.399
32.933
30.025
26.823
23.836
21.128
18.841
–5.9
–17.0
–28.0
–40.4
–54.1
–68.3
–83.2
–97.9
–111.7
–123.4
–135.5
–146.8
–156.8
–165.9
–174.2
.013
.012
.009
.009
.012
.013
.013
.013
.013
.014
.014
.015
.016
.016
.017
17.1
19.8
22.5
25.1
27.8
30.5
33.1
35.8
38.5
41.2
43.9
46.6
49.2
51.6
54.5
.200
.208
.231
.258
.273
.305
.319
.320
.297
.260
.240
.216
.192
.173
.155
–11.7
–15.4
–23.5
–34.2
–47.2
–60.9
–77.8
–96.2
–115.4
–128.2
–142.2
–156.3
–169.7
176.0
162.3
10
S11
S21
S12
S22
K
1.06
1.07
1.21
1.10
0.86
0.79
0.82
0.89
1.04
1.10
1.22
1.31
1.40
1.56
1.65
µPC2710T
PACAGE DIMENSIONS
6 pin minimold (Unit: mm)
+0.1
0.3 –0.05
2
3
+0.2
1.5 –0.1
+0.2
2.8 –0.3
1
0.13±0.1
0 to 0.1
6
5
4
0.95
0.95
1.9
0.8
+0.2
1.1 –0.1
2.9±0.2
11
µPC2710T
NOTES ON CORRECT USE
(1) Observe precautions for handling because of electro-static sensitive devices.
(2) Form a ground pattern as wide as possible to minimize ground impedance (to prevent undesired oscillation).
All the ground pins must be connected together with wide ground pattern to decrease impedance difference.
(3) The bypass capacitor should be attached to VCC line.
(4) The inductor must be attached between VCC and output pins. The inductance value should be determined in
accordance with desired frequency.
(5) The DC cut capacitor must be attached to input pin.
RECOMMENDED SOLDERING CONDITIONS
This product should be soldered under the following recommended conditions.
For soldering methods and
conditions other than those recommended below, contact your NEC sales representative.
µPC2710T
Soldering Method
Soldering Conditions
Recommended Condition
Symbol
Infrared Reflow
Package peak temperature: 235°C or below
Time: 30 seconds or less (at 210°C)
Count: 3, Exposure limitNote: None
IR35-00-3
VPS
Package peak temperature: 215°C or below
Time: 40 seconds or less (at 200°C)
Count: 3, Exposure limitNote: None
VP15-00-3
Wave Soldering
Soldering bath temperature: 260°C or below
Time: 10 seconds or less
Count: 1, Exposure limitNote: None
WS60-00-1
Partial Heating
Pin temperature: 300°C
Time: 3 seconds or less (per side of device)
Exposure limitNote: None
–
Note After opening the dry pack, keep it in a place below 25°C and 65% RH for the allowable storage period.
Caution
Do not use different soldering methods together (except for partial heating).
For details of recommended soldering conditions for surface mounting, refer to information document
SEMICONDUCTOR DEVICE MOUNTING TECHNOLOGY MANUAL (C10535E).
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µPC2710T
[MEMO]
13
µPC2710T
[MEMO]
14
µPC2710T
[MEMO]
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µPC2710T
NESAT (NEC Silicon Advanced Technology) is a trademark of NEC Corporation.
No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in
this document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property
rights of third parties by or arising from use of a device described herein or any other liability arising from use
of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other
intellectual property rights of NEC Corporation or others.
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
NEC devices are classified into the following three quality grades:
"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a
customer designated "quality assurance program" for a specific application. The recommended applications of
a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device
before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact an NEC sales representative in advance.
Anti-radioactive design is not implemented in this product.
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