DATA SHEET GaAs HBT INTEGRATED CIRCUIT µPG2304TK L-BAND VCO LOCAL BUFFER AMPLIFIER DESCRIPTION The µPG2304TK is GaAs HBT MMIC for VCO local buffer amplifier which were developed for mobile phone and another L-band application. This device realizes excellent performance by using InGaP HBT. This device is housed in a 6-pin lead-less minimold package (1511). And this package is able to high-density surface mounting. FEATURES • Operation frequency : fopt1 = 679 to 768 MHz (720 MHz TYP.) : fopt2 = 1 270 to 1 371 MHz (1 320 MHz TYP.) • Supply voltage : VCC = 2.7 to 2.9 V (2.8 V TYP.) • Low current consumption : ICC = 3.5 mA TYP.@ VCC = 2.8 V • Excellent isolation : ISL1 = 40 dB TYP. @ fopt1 = 720 MHz, Pin = −4 dBm, VCC = 2.8 V : ISL2 = 35 dB TYP. @ fopt2 = 1 320 MHz, Pin = −4 dBm, VCC = 2.8 V • High-density surface mounting : 6-pin lead-less minimold package (1.5 × 1.1 × 0.55 mm) APPLICATION • VCO Buffer Amplifier etc. ORDERING INFORMATION Part Number µPG2304TK-E2 Package Marking 6-pin lead-less minimold (1511) G3F Supplying Form • Embossed tape 8 mm wide • Pin 1, 6 face the perforation side of the tape • Qty 5 kpcs/reel Remark To order evaluation samples, contact your nearby sales office. Part number for sample order: µPG2304TK Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices representative for availability and additional information. Document No. PG10162EJ01V0DS (1st edition) Date Published May 2002 CP(K) Printed in Japan NEC Compound Semiconductor Devices 2002 µPG2304TK PIN CONNECTIONS AND INTERNAL BLOCK DIAGRAM Top View G3F 1 2 3 Top View 6 1 5 2 4 3 6 5 SW Circuit 4 Pin No. Pin Name 1 OUTPUT2 (1.5 GHz) / VCC 2 GND 3 OUTPUT1 (800 MHz) / VCC 4 INPUT1 (800 MHz) 5 N.C. 6 INPUT2 (1.5 GHz) / VSW TRUTH TABLE VSW = 0 V VSW = 2.8 V INPUT1 - OUTPUT1 High Low INPUT2 - OUTPUT2 Low High ABSOLUTE MAXIMUM RATINGS (TA = +25°°C, unless otherwise specified) Parameter Symbol Ratings Unit Supply Voltage VCC 4.0 V Switch Voltage VSW 4.0 V Input Power Pin +10 dBm 125 Note Power Dissipation PD mW Operating Ambient Temperature TA −30 to +85 °C Storage Temperature Tstg −65 to +150 °C Circuit Current ICC 15 mA Control Current ISW 0.3 mA Note Mounted on double-sided copper-clad 50 × 50 × 1.6 mm epoxy glass PWB, TA = +85°C RECOMMENDED OPERATING RENGE (TA = +25°°C) Parameter Symbol MIN. TYP. MAX. Unit Operating Frequency 1 fopt1 679 720 768 MHz Operating Frequency 2 fopt2 1 270 1 320 1 371 MHz Supply Voltage VCC 2.7 2.8 2.9 V Switch Voltage 1 VSW1 2.7 2.8 2.9 V Switch Voltage 2 VSW2 0 − 0.5 V 2 Data Sheet PG10162EJ01V0DS µPG2304TK ELECTRICAL CHARACTERISTICS (TA = +25°°C, VCC = 2.8 V, Pin = −4 dBm, External input and output matching, unless otherwise specified) Parameter Symbol Test Conditions MIN. TYP. MAX. Unit Circuit Current 1 ICC1 VSW = 0 V − 3.5 4.0 mA Circuit Current 2 ICC2 VSW = 2.8 V − 3.5 4.0 mA Power Gain 1 GP1 VSW = 0 V, f = 720 MHz −2 0 +2 dB Power Gain 2 GP2 VSW = 2.8 V, f = 1 320 MHz −2 0 +2 dB Input Return Loss 1 RLin1 VSW = 0 V, f = 720 MHz − 10 − dB Input Return Loss 2 RLin2 VSW = 2.8 V, f = 1 320 MHz − 10 − dB Output Return Loss 1 RLout1 VSW = 0 V, f = 720 MHz − 5 − dB Output Return Loss 2 RLout2 VSW = 2.8 V, f = 1 320 MHz − 5 − dB Isolation 1 ISL1 VSW = 0 V, f = 720 MHz 30 40 − dB Isolation 2 ISL2 VSW = 2.8 V, f = 1 320 MHz 30 35 − dB Noise Figure 1 NF1 VSW = 0 V, f = 720 MHz − 8.5 9.5 dB Noise Figure 2 NF2 VSW = 2.8 V, f = 1 320 MHz − 7.0 8.0 dB Data Sheet PG10162EJ01V0DS 3 µPG2304TK EVALUATION CIRCUIT (VCC = 2.8 V, Pin = −4 dBm) VCC VSW 1 000 pF 68 kΩ 270 Ω 1.5 pF 100 pF 6 1 OUTPUT2 INPUT2 56 Ω 2 SW Circuit 5 1.0 pF OUTPUT1 3 270 Ω INPUT1 4 68 Ω 1 000 pF VCC The application circuits and their parameters are for reference only and are not intended for use in actual design-ins. 4 Data Sheet PG10162EJ01V0DS µPG2304TK ILLUSTRATION OF THE TEST CIRCUIT ASSEMBLED ON EVALUATION BOARD Dual HBT LNA 6pin L2MM Vcc C4 C 3 2 1.5 G OUT C 4 R R 1.5 G IN 3 1 C R 2 800 M OUT 3 R 800 M IN 1 R C4 Vsw Vcc USING THE NEC EVALUATION BOARD Symbol Values Part Number Maker R1 56 Ω RR0816P-560-D Susumu R2 68 Ω RR0816P-680-D Susumu R3 270 Ω RR0816P-271-D Susumu R4 68 kΩ RR0816P-683-D Susumu C1 1 pF GRM39CH010C50PB muRata C2 1.5 pF GRM39CH1R5C50PB muRata C3 100 pF GRM39CH101J50PB muRata C4 1 000 pF GRM39CH102J25PB muRata Data Sheet PG10162EJ01V0DS 5 µPG2304TK TYPICAL CHARACTERLISTICS (TA = +25°°C, unless otherwise specified) CIRCUIT CURRENT vs. INPUT POWER CIRCUIT CURRENT vs. OPERATING AMBIENT TEMPERATURE 5 5 Circuit Current ICC (mA) 4 f = 720 MHz, VCC = 2.8 V, VSW = 0 V 3 2 1 0 –20 Output Power Pout (dBm) +5 0 –15 –10 –5 0 f = 720 MHz, Pin = –4 dBm 4 VCC = 2.8 V, VSW = 0 V 3 2 1 0 –40 +5 0 +20 +40 +60 +80 +100 Operating Ambient Temperature TA (˚C) OUTPUT POWER vs. INPUT POWER POWER GAIN vs. OPERATING AMBIENT TEMPERATURE +3 f = 720 MHz, VCC = 2.8 V, VSW = 0 V –5 –10 –15 –20 –20 f = 720 MHz, Pin = –4 dBm +2 VCC = 2.8 V, VSW = 0 V +1 0 –1 –2 –15 –10 –5 0 +5 –3 –40 –20 0 +20 +40 +60 +80 Operating Ambient Temperature TA (˚C) Input Power Pin (dBm) Remark The graphs indicate nominal characteristics. 6 –20 Input Power Pin (dBm) Power Gain GP (dB) Circuit Current ICC (mA) INPUT1 - OUTPUT1 Data Sheet PG10162EJ01V0DS +100 µPG2304TK CIRCUIT CURRENT vs. INPUT POWER CIRCUIT CURRENT vs. OPERATING AMBIENT TEMPERATURE 5 5 Circuit Current ICC (mA) 4 f = 1 320 MHz, VCC = 2.8 V, VSW = 2.8 V 3 2 1 0 –20 Output Power Pout (dBm) +5 0 –15 –10 –5 0 f = 1 320 MHz, Pin = –4 dBm 4 VCC = 2.8 V, VSW = 2.8 V 3 2 1 0 –40 +5 –20 0 +20 +40 +60 +80 +100 Input Power Pin (dBm) Operating Ambient Temperature TA (˚C) OUTPUT POWER vs. INPUT POWER POWER GAIN vs. OPERATING AMBIENT TEMPERATURE +3 f = 1 320 MHz, VCC = 2.8 V, VSW = 2.8 V Power Gain GP (dB) Circuit Current ICC (mA) INPUT2 - OUTPUT2 –5 –10 –15 –20 –20 f = 1 320 MHz, Pin = –4 dBm +2 VCC = 2.8 V, VSW = 2.8 V +1 0 –1 –2 –15 –10 –5 0 +5 –3 –40 –20 0 +20 +40 +60 +80 +100 Operating Ambient Temperature TA (˚C) Input Power Pin (dBm) Remark The graphs indicate nominal characteristics. Data Sheet PG10162EJ01V0DS 7 µPG2304TK PACKAGE DIMENSIONS 6-PIN LEAD-LESS MINIMOLD (1511) (UNIT: mm) Remark () : Reference value 8 Data Sheet PG10162EJ01V0DS 0.11+0.1 –0.05 (0.48) (0.48) 0.55±0.05 (0.96) 1.5±0.1 1.1±0.1 0.16+0.1 –0.05 1.3±0.1 µPG2304TK RECOMMENDED SOLDERING CONDITIONS This product should be soldered and mounted under the following recommended conditions. For soldering methods and conditions other than those recommended below, contact your nearby sales office. Soldering Method Soldering Conditions Condition Symbol Infrared Reflow Peak temperature (package surface temperature) Time at peak temperature Time at temperature of 220°C or higher Preheating time at 120 to 180°C Maximum number of reflow processes Maximum chlorine content of rosin flux (% mass) : 260°C or below : 10 seconds or less : 60 seconds or less : 120±30 seconds : 3 times : 0.2%(Wt.) or below IR260 VPS Peak temperature (package surface temperature) Time at temperature of 200°C or higher Preheating time at 120 to 150°C Maximum number of reflow processes Maximum chlorine content of rosin flux (% mass) : 215°C or below : 25 to 40 seconds : 30 to 60 seconds : 3 times : 0.2%(Wt.) or below VP215 Wave Soldering Peak temperature (molten solder temperature) Time at peak temperature Preheating temperature (package surface temperature) Maximum number of flow processes Maximum chlorine content of rosin flux (% mass) : 260°C or below : 10 seconds or less : 120°C or below : 1 time : 0.2%(Wt.) or below WS260 Partial Heating Peak temperature (pin temperature) Soldering time (per side of device) Maximum chlorine content of rosin flux (% mass) : 350°C or below : 3 seconds or less : 0.2%(Wt.) or below HS350 Caution Do not use different soldering methods together (except for partial heating). Data Sheet PG10162EJ01V0DS 9 µPG2304TK • The information in this document is current as of May, 2002. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. • No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document. • NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC semiconductor products listed in this document or any other liability arising from the use of such products. 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