NTE2303 Silicon NPN Transistor Horizontal Deflection Description: The NTE2303 is a silicon NPN transistor in a TO220 type package designed for use in small screen black and white deflection circuits. Features: D Collector–Emitter Voltage: VCEX = 1500V D Glassivated Base–Collector Junction D Switching Times with Inductive Loads: tf = 0.65µs (Typ) @ IC = 2A Maximum Ratings: Collector–Emitter Voltage, VCEO(sus) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 750V Collector–Emitter Voltage, VCEX . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1500V Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.5A Continuous Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.0A Continuous Emitter Current, IE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.5A Total Power Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65W Derate above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.65W/°C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +125°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +125°C Maximum Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.54°C/W Electrical Characteristics: (TC = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit 750 – – V OFF Characteristics (Note 1) Collector–Emitter Sustaining Voltage VCEO(sus) IC = 50mA, IB = 0 Collector Cutoff Current ICES VCE = 1500V, VBE = 0 – – 1.0 mA Emitter Cutoff Current IEBO VEB = 5V, IC = 0 – – 0.1 mA ON Characteristics (Note 1) Collector–Emitter Saturation Voltage VCE(sat) IC = 2A, IB = 660mA – – 5.0 V Base–Emitter Saturation Voltage VBE(sat) IC = 2A, IB = 660mA – – 1.5 V Note 1 Pulse Test: Pulse Width ≤ 300µs, Duty Cycle = 2%. Electrical Characteristics (Cont’d): (TC = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit VCB = 10V, IE = 0, f = 0.1MHz – 50 – pF fT VCE = 5V, Ic = 100mA, ftest = 1MHz, Note 1 – 4.0 – MHz tf IC = 2A, IB1 = 600mA, LB = 12µH – 0.65 – µs Dynamic Characteristics Output Capacitance Cob Current Gain–Bandwidth Product Switching Characteristics Fall Time Note 1 Pulse Test: Pulse Width ≤ 300µs, Duty Cycle = 2%. .420 (10.67) Max .110 (2.79) .147 (3.75) Dia Max .500 (12.7) Max .250 (6.35) Max .500 (12.7) Min .070 (1.78) Max Base .100 (2.54) Emitter Collector/Tab