NTE171 Silicon NPN Transistor Audio/Video Amplifier Description: The NTE171 is a silicon NPN transistor in a TO202 type case designed for high–voltage TV video and chroma output circuits, high–voltage linear amplifiers, and high–voltage transistor regulators. Features: D High Collector–Emitter Breakdown Voltage Voltage: V(BR)CER = 300V @ IC = 1mA D Low Collector–Base Capacitance: Ccb = 3pF Max @ VCB = 20V Absolute Maximum Ratings: Collector–Emitter Voltage (IC = 1mA, RBE = 10kΩ, Note 1), VCER . . . . . . . . . . . . . . . . . . . . . . . . 300V Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300V Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 700mA Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250mA Total Power Dissipation (TA = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.67W Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13.3mW/°C Total Power Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6.25W Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mW/°C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C Thermal Resistance, Junction to Ambient, RΘJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75°C/W Thermal Resistance, Junction to Case, RΘJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20°C/W Lead Temperature (During Soldering, 1/16” from case, 10sec), TL . . . . . . . . . . . . . . . . . . . . . +260°C Note 1. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%. Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit 300 – – V OFF Characteristics Collector–Emitter Breakdown Voltage V(BR)CER IC = 1mA, IB = 0, Note 1 Collector Cutoff Current ICBO VCB = 300V, IE = 0 – – 10 µA Emitter Cutoff Current IEBO VBE = 5V, IC = 0 – – 10 µA hFE IC = 4mA, VCE = 10V 20 – – IC = 20mA, VCE = 10V 30 – 90 IC = 40mA, VCE = 10V 20 – – IC = 20mA, VCE = 10V, f = 20MHz 50 – – MHz VCB = 20V, IE = 0, f = 1MHz – – 3 pF ON Characteristics (Note 1) DC Current Gain Dynamic Characteristics Current Gain–Bandwidth Product fT Collector–Base Capacitance Ccb Note 1. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%. .380 (9.56) .180 (4.57) .132 (3.35) Dia C .500 (12.7) .325 (9.52) 1.200 (30.48) Ref .070 (1.78) x 45° Chamf .300 (7.62) .050 (1.27) .400 (10.16) Min E .100 (2.54) B C .100 (2.54)