NTE2311 Silicon NPN Transistor High Voltage, High Speed Switch Description: The NTE2311 is a silicon NPN transistor in a TO218 type case designed for use in high voltage, high speed switching applications. Features: D High Blocking Capability: VCEX = 1000V D Wide Surge Area: ICSM = 55A @ 350V Applications: D Switchmode Power Supply D DC/DC and DC/AC Converters D Motor Control Absolute Maximum Ratings: (TC = +25°C unless otherwise specified) Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 450V Collector–Emitter Voltage (VBE = –2.5V), VCEX . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1000V Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7V Collector Current (tp ≤ 5ms), IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15A Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30A Base Current (tp ≤ 5ms), IB Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20A Power Dissipation, Ptot TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150W TC = +60°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 115W Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +175°C Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1°C/W Electrical Characteristics: (TJ = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit 450 – – V 7 – 30 V VCE = VCEX, VBE = –2.5V – – 0.2 mA – – 2.0 mA VCE = VCEX, RBE = 10Ω Ω – – 0.5 mA – – 4.0 mA OFF Characteristics Collector–Emitter Sustaining Voltage VCEO(sus) IB = 0, IC = 200mA, L = 25mH Emitter–Base Breakdown Voltage Collector Cutoff Current V(BR)EBO IC = 0, IE = 50mA ICEX TJ = +25°C TJ = +125°C ICER TJ = +25°C TJ = +125°C Electrical Characteristics (Cont’d): (TJ = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics (Cont,d) Emitter Cutoff Current IEBO IC = 0, VBE = –5V – – 1 mA hFE IC = 8Adc, VCE = 5Vdc) 10 – – – IC = 8A, IB = 1.6A – – 1.5 V IC = 12A, IB = 2.4A – – 5.0 V IC = 8A, IB = 1.6A – – 1.6 V – 0.55 1.0 µs – 1.5 3.0 µs – 0.3 0.8 µs – 3.5 – µs – – 5.0 µs – 0.08 – µs – – 0.4 µs ON Characteristics (Note 1) DC Current Gain Collector–Emitter Saturation Voltage Base–Emitter Saturation Voltage VCE(sat) VBE(sat) Switching Characteristics (Switching Times on Resistive Load) Turn–On Time ton Storage Time ts Fall Time tf VCC = 150V, IC = 8A, IB1 = –IB2 = 1.6A Switching Characteristics (Switching Times on Inductive Load) Storage Time ts Fall Time tf TJ = +25°C VCC = 300V, VBB = –5V, TJ = +125°C LB = 3µH, TJ = +25°C IC = 8A, TJ = +125°C IBend = 1.6A Note 1. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2% .060 (1.52) .600 (15.24) .173 (4.4) C .156 (3.96) Dia. B C .550 (13.97) .430 (10.92) E .500 (12.7) Min .055 (1.4) .216 (5.45) .015 (0.39) NOTE: Dotted line indicates that case may have square corners