NTE NTE2317

NTE2317
Silicon NPN Transistor
High Voltage Fast Switching Power Darlington
Description:
The NTE2317 is a multiepitaxial bipolar NPN transistor in a monolithic Darlington configuration
mounted in a TO218 type package designed for use in automotive ignition applications and inverter
circuits for motor controls. Controlled performances in the linear region make this device particularly
suitable for car ignitions where current limiting is achieved desaturing the darlington.
Features:
D High Performance Electronic Ignition Darlington
D High Ruggedness
Applications:
D Automotive Market
Absolute Maximum Ratings:
Collector–Emitter Voltage (VBE = 0), VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V
Collector–Emitter Voltage (IB = 0), VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 450V
Emitter–Base Voltage (IC = 0), VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15A
Peak (tp ≤ 10ms) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30A
Base Current, IB
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A
Peak (tp ≤ 10ms) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5A
Total Power Dissipation (TC ≤ +25°C), Ptot . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 125W
Maximum Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +150°C
Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1°C/W
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
450
–
–
V
–
–
1
mA
–
–
5
mA
OFF Characteristics
Collector–Emitter Sustaining Voltage VCEO(sus) IC = 100mA, Note 1
Collector Cutoff Current
ICES
TJ = +25°C
TJ = +125°C
Emitter Cutoff Current
VCE = 500V,
VBE = 0
ICEO
VCE = 450V, IB = 0
–
–
1
mA
IEBO
IC = 0, VEB = 5V
–
–
50
mA
ON Characteristics (Note 1)
Collector–Emitter Saturation Voltage
VCE(sat)
IC = 8A, IB = 150mA
–
1.09
1.8
V
Base–Emitter Saturation Voltage
VBE(sat)
IC = 8A, IB = 150mA
–
1.77
2.2
V
DC Current Gain
hFE
IC = 5A, VCE = 10V
300
–
–
Diode Forward Voltage
VF
IF = 10A
–
1.43
2.8
V
–
15
–
µs
–
0.5
–
µs
Switching Characteristics (Switching Times on Inductive Load)
Storage Time
ts
Fall Time
tf
VCC = 12V, VBE = 0, LB = 7mH,
Ω
IC = 7A, IB = 70mA, RBE = 47Ω,
Vclamp= 300V
Note 1. Pulse Test: Pulse Width = 300µs, Duty Cycle = 1.5%.
.600
(15.24)
.060 (1.52)
.173 (4.4)
C
C
B
.156
(3.96)
Dia.
B
C
.550
(13.97)
800Ω
.430
(10.92)
50Ω
E
E
.500
(12.7)
Min
.055 (1.4)
.015 (0.39)
.216 (5.45)
NOTE: Dotted line indicates that
case may have square corners