NTE2504 Silicon NPN Transistor High Gain Audio Amplifier Features: D Large Current Capacity (IC = 2A) D Adoption of MBIT Process D High DC Current Gain: hFE = 800 to 3200 D Low Collector–Emitter Saturation Voltage: VCE(sat) < 0.5V Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A Collector Dissipation, PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.2W Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit Collector Cutoff Current ICBO VCB = 20V, IE = 0 – – 0.1 µA Emitter Cutoff Current IEBO VEB = 10V, IC = 0 – – 0.1 µA DC Current Gain hFE VCE = 5V, IC = 500mA 800 fT VCE = 10V, IC = 50mA – 260 – MHz Cob VCE = 10V, f = 1MHz – 27 – pF Current Gain–Bandwidth Product Output Capacitance 1500 3200 Collector–Emitter Saturation Voltage VCE(sat) IC = 1A, IB = 20mA – 0.15 0.5 V Base–Emitter Saturation Voltage VBE(sat) IC = 1A, IB = 20mA – 0.85 1.2 V 30 – – V Collector–Base Breakdown Voltage V(BR)CBO IC = 10A, IE = 0 .315 (8.0) .106 (2.7) .433 (11.0) E C B .610 (15.5) .094 (2.4)