NTE2592 Silicon NPN Transistor Horizontal Output for HDTV Features: D High Breakdown Voltage: V(BR)CBO = 2000V Min D Isolated TO220 Type Package Absolute Maximum Ratings: (TC = +25°C unless otherwise specified) Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2000V Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1800V Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15mA Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA Collector Power Dissipation, PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2W Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C Maximum Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8.3°C/W Electrical Characteristics: (TC = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit – 1 µA 1 µA Collector Cutoff Current ICBO VCB = 1800V, IE = 0 – Emitter Cutoff Current IEBO VEB = 4V, IC = 0 – DC Current Gain hFE VCE = 5V, IC = 300µA 10 – 60 fT VCE = 10V, IC = 300µA – 6 – MHz Collector–Emitter Saturation Voltage VCE(sat) IC = 600µA, IB = 120µA – – 5 V Base–Emitter Saturation Voltage VBE(sat) IC = 600µA, IB = 120µA – – 2 V 2000 – – V 1800 – – V 5 – – V – 1.8 – pF Gain Bandwidth Product Collector–Base Breakdown Voltage V(BR)CBO IC = 100µA, IE = 0 Collector–Emitter Breakdown Voltage V(BR)CEO IC = 100µA, RBE = ∞ Emitter–Base Breakdown Voltage Output Capacitance V(BR)EBO IE = 10µA, IC = 0 Cob VCB = 100V, f = 1MHz .402 (10.2) Max .173 (4.4) Max .224 (5.7) Max .114 (2.9) Max .122 (3.1) Dia .295 (7.5) .165 (4.2) .669 (17.0) Max B C E .531 (13.5) Min .100 (2.54) .059 (1.5) Max NOTE: Tab is isolated