NTE NTE2368

NTE2367 (NPN) & NTE2368 (PNP)
Silicon Complementary Transistors
Digital w/2 Built–In 4.7k Bias Resistors
Features:
D Built–In Bias Resistor (R1 = 4.7kΩ, R2 = 4.7kΩ)
D Small–Sized Package (TO92 type)
Applications:
D Switching Circuit
D Inverter
D Interface Circuit
D Driver
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector to Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V
Collector to Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V
Emitter to Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mA
Collector Dissipation, PC
NTE2367 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mW
NTE2368 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mW
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +160°C
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
ICBO
VCB = 40V, IE = 0
–
–
0.1
µA
ICEO
VCE = 40V, IB = 0
–
–
0.5
µA
Emitter Cutoff Current
IEBO
VEB = 5V, IC = 0
170
250
330
µA
DC Current Gain
hFE
VCE = 5V, IC = 10mA
30
–
–
fT
VCE = 10V, IC = 5mA
–
250
–
MHz
–
200
–
MHz
–
3.0
–
pF
Collector Cutoff Current
Current Gain–Bandwidth Product
NTE2367
NTE2368
Output Capacitance
Cob
VCB = 10V, f = 1MHz
Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter
Symbol
Collector–Emitter Saturation Voltage
VCE(sat)
Test Conditions
IC = 5mA, IB = 0.25mA
Min
Typ
Max
Unit
–
0.1
0.3
V
Collector–Base Breakdown Voltage
V(BR)CBO IC = 10µA, IE = 0
50
–
–
V
Collector–Emitter Breakdown Voltage
V(BR)CEO IC = 100µA, RBE = ∞
50
–
–
V
Input OFF Voltage
VI(off)
VCE = 5V, IC = 100µA
1.0
–
1.5
V
Input ON Voltage
VI(on)
VCE = 200mV, IC = 5mA
1.1
–
2.0
V
Input Resistance
R1
3.29
4.7
6.11
kΩ
R1/R2
0.9
1.0
1.1
Input Resistance Ratio
Schematic Diagram
Collector
(Output)
Collector
(Output)
R1
R1
Base
(Input)
Base
(Input)
R2
R2
Emitter
(GND)
Emitter
(GND)
NPN
PNP
.165 (4.2)
Max
.126
(3.2)
Max
.071
(1.8)
.500
(12.7)
Max
E C B
.050 (1.27)
.050 (1.27)
.035 (0.9)
.102
(2.6)
Max