NTE2367 (NPN) & NTE2368 (PNP) Silicon Complementary Transistors Digital w/2 Built–In 4.7k Bias Resistors Features: D Built–In Bias Resistor (R1 = 4.7kΩ, R2 = 4.7kΩ) D Small–Sized Package (TO92 type) Applications: D Switching Circuit D Inverter D Interface Circuit D Driver Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector to Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V Collector to Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V Emitter to Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mA Collector Dissipation, PC NTE2367 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mW NTE2368 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mW Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +160°C Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit ICBO VCB = 40V, IE = 0 – – 0.1 µA ICEO VCE = 40V, IB = 0 – – 0.5 µA Emitter Cutoff Current IEBO VEB = 5V, IC = 0 170 250 330 µA DC Current Gain hFE VCE = 5V, IC = 10mA 30 – – fT VCE = 10V, IC = 5mA – 250 – MHz – 200 – MHz – 3.0 – pF Collector Cutoff Current Current Gain–Bandwidth Product NTE2367 NTE2368 Output Capacitance Cob VCB = 10V, f = 1MHz Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified) Parameter Symbol Collector–Emitter Saturation Voltage VCE(sat) Test Conditions IC = 5mA, IB = 0.25mA Min Typ Max Unit – 0.1 0.3 V Collector–Base Breakdown Voltage V(BR)CBO IC = 10µA, IE = 0 50 – – V Collector–Emitter Breakdown Voltage V(BR)CEO IC = 100µA, RBE = ∞ 50 – – V Input OFF Voltage VI(off) VCE = 5V, IC = 100µA 1.0 – 1.5 V Input ON Voltage VI(on) VCE = 200mV, IC = 5mA 1.1 – 2.0 V Input Resistance R1 3.29 4.7 6.11 kΩ R1/R2 0.9 1.0 1.1 Input Resistance Ratio Schematic Diagram Collector (Output) Collector (Output) R1 R1 Base (Input) Base (Input) R2 R2 Emitter (GND) Emitter (GND) NPN PNP .165 (4.2) Max .126 (3.2) Max .071 (1.8) .500 (12.7) Max E C B .050 (1.27) .050 (1.27) .035 (0.9) .102 (2.6) Max