2N3702 Silicon PNP Transistor Audio Power Amplifier TO−92 Type

2N3702
Silicon PNP Transistor
Audio Power Amplifier
TO−92 Type Package
mAbsolute Maximum Ratings: (TA = +25C unless otherwise specified)
Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V
Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V
Emitter−Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current , IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA
Collector Dissipation, PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 625mW
Derate above +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5mW/C
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55 to +150C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55 to +150C
Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 83.3C/W
Thermal Resistance, Junction−to−Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200C/W
Note 1. These ratings are limiting values above which the serviceability of the device may be impaired and are based on maximum temperature of +150C.
Electrical Characteristics: (TA = +25C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max Unit
Collector−Base Breakdown Voltage
V(BR)CBO IC = 10mA, IE = 0
40
−
−
V
Collector−Emitter Breakdown Voltage
V(BR)CEO IC = 100A,IB = 0 , Note 2
25
−
−
V
Emitter−Base Breakdown Voltage
V(BR)EBO IE = 100A, IC = 0
5
−
−
V
Collector Cutoff Current
ICBO
VCB = 20V, IE = 0
−
−
100
nA
Emitter Cutoff Current
IEBO
VEB = 3V, IC = 0
−
−
100
nA
DC Current Gain
hFE
VCE = 5V, IC = 50mA, Note 2
60
−
300
−
Collector−Emitter Saturation Voltage
VCE(sat)
IC = 50mA, IB = 5mA, Note 2
−
−
0.25
V
Base−Emitter On Voltage
VBE(on)
VCE = 5V, IC = 50mA, Note 2
0.6
−
1
V
−
−
12
pF
100
−
−
MHz
Output Capacitance
Current Gain − Bandwidth Product
Cob
fT
VCB = 10V, f = 1.0 MHz
IC = 50 mA, VCE = 5V
Note 2. Pulse Test: Pulse Width  300s, Duty Cycle  2%.
.135 (3.45) Min
.210
(5.33)
Max
Seating Plane
.021 (.445) Dia Max
.500
(12.7)
Min
E C B
.100 (2.54)
.050 (1.27)
.165
(4.2)
Max
.105 (2.67) Max
.205 (5.2) Max
.105 (2.67) Max