NTE2638 Silicon NPN Transistor Darlington Features: D High Voltage, High Forward and Clamped Reverse Energy D 10A Peak Collector Current D 80W at +25°C Case Temperature D Collector–Emitter Sustaining Voltage: 400V Min at 7A Absolute Maximum Ratings: (TC = +25°C unless otherwise specifieid) Collector–Emitter Voltage (IB = 0), VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7A Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A Continuous Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5A Continuous Device Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80W Derate Linearly to 150°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.64W/°C Continuous Device Dissipation (TA = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2W Derate Linearly to 150°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16mW/°C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.56°C/W Thermal Resistance, Junction–to–Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 62.5°C/W Typical Thermal Resistance, Case–to–Heat Sink (Note 2), RthCHS . . . . . . . . . . . . . . . . . . . . 0.7°C/W Lead Temperature (During Soldering, 1/8” from case, 10sec), TL . . . . . . . . . . . . . . . . . . . . . . +260°C Note 1. This value applies for tw ≤ 5ms, duty cycle ≤ 10%. Note 2. This parameter is measured using 0.003” (0.08mm) mica insulator with Dow–Corning 11 compound on both sides of the insulator, a 0.138–32 (formally 6–32) mounting screw with bushing, and a mounting torque of 8 in•lb (0.9 n•m). Electrical Characteristics: (TC = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit Collector–Base Breakdown Voltage V(BR)CBO IC = 1mA, IE = 0, Note 3 400 – – V Collector–Emitter Breakdown Voltage V(BR)CEO IC = 10mA, IB = 0, Note 3 400 – – V Collector–Emitter Sustaining Voltage VCEX(sus) 400 – – V IC = 7A Collector Cutoff Current ICEO VCE = 400V, IB = 0 – – 250 µA Emitter Cutoff Current IEBO VEB = 8V, IC = 0 – – 15 mA DC Current Gain hFE IC = 2.5A, VCE = 5V, Note 3, Note 4 150 – – IC = 5A, VCE = 5V, Note 3, Note 4 50 – – IC = 7A, VCE = 5V, Note 3, Note 4 15 – – IB = 100mA, IC = 2A, Note 3, Note 4 – – 2.2 V IB = 250mA, IC = 5A, Note 3, Note 4 – – 2.3 V IB = 10mA, IC = 1A, Note 3, Note 4 – – 1.5 V IB = 100mA, IC = 2A, Note 3, Note 4 – – 1.5 V IB = 250mA, IC = 5A, Note 3, Note 4 – – 2.0 V – – 3.5 V Base–Emitter Voltage Collector–Emitter Saturation Voltage VBE VCE(sat) Diode Forward Voltage VF IF = 7A, Note 3, Note 4 Small–Signal Current Gain hfe VCE = 5V, IC = 500mA, f = 1kHz 200 – – Small–Signal Forward Current Transfer Ratio |hfe| VCE = 5V, IC = 500mA, f = 1kHz 10 – – Collector Capacitance Cobo IE = 0, VCB = 10V, f = 1MHz – – 100 pF – 3400 – ns – 1520 – ns Resistive–Load Switching Characteristics (TC = +25°C unless otherwise specified) Turn–Off Storage Time ts Turn–Off Fall Time tf Turn–Off Rise Time tr – 160 – ns Turn–On Delay Time td – 20 – ns – 3900 – ns – 4700 – ns IC = 5A, IB1 = 250mA, IB2 = –250mA, VBE(off) = –7.3V, RL = 50Ω, Note 5 Inductive–Load Switching Characteristics (TC = +25°C unless otherwise specified) Voltage Storage Time tsv Current Storage Time tsi Voltage Rise Time trv – 1200 – ns Storage Rise Time tri – 1200 – ns Turn–Off Crossover Time txo – 2000 – ns V(clamp) = Min VCEX(sus), ICM = 5A, IB1 = 250mA, IB2 = –250mA, Note 5 Note 3. These parameters must be measured using pulse techniques, tw = 300µs, duty cycle ≤ 2%. Note 4. These parameters are measured with voltage–sensing contacts separate from the current– carrying contacts located within 1/8” (3.2mm) from the device body. Note 5. Voltage and current values shown are nominal; exact values vary slightly with transistor parameters. C B E .420 (10.67) Max .110 (2.79) C .147 (3.75) Dia Max .500 (12.7) Max .250 (6.35) Max .500 (12.7) Min .070 (1.78) Max Base .100 (2.54) Emitter Collector