NTE2635 Silicon NPN Transistor Horizontal Deflection w/Internal Damper Diode Description: The NTE2635 is an enhanced performance, new generation, high–voltage, high–speed switching NPN transistor with an integrated damper diode in a full–pack envelope intended for use in horizontal deflection circuits in color TV receivers. This device features exceptional tolerance to base drive and collector current load variations resulting in a very low worst case dissipation. Absolute Maximum Ratings: Collector–Emitter Voltage (VBE = 0V), VCESM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1500V Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 700V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15A Base Current, IB Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6A Reverse Base Current, –IB Continuous (Average over any 20ms period) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA Peak (Turn–Off Current) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5A Total Power Dissipation (TC = +25°C), Ptot . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35W Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C Thermal Resistance, Junction–to–Case (With Heat Sink Compound), RthJC . . . . . . . . . . . . . 3.6K/W Typical Thermal Resistance, Junction–to–Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55K/W Electrical Characteristics: (TC = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit RMS Isolation Voltage from all Three Terminals to Case VISOL f = 50–60hz, Sinusoidal Waveform, R.H. ≤ 65%, Clean and Dustfree – – 2500 V Capacitance from T2 to External Heat Sink CISOL f = 1MHz – 10 – pF VCE = 1500V, VBE = 0, Note 1 – – 1.0 mA VCE = 1500V, VBE = 0, TJ = +125°C, Note 1 – – 2.0 mA Isolation Limiting Value Static Characteristics Collector Cutoff Current ICES Note 1. Measured with half sine–wave voltage (curve tracer). Electrical Characteristics: (TC = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit 140 – 390 mA 7.5 13.5 – V – 33 – Ω 700 – – V – – 5.0 V IC = 4.5A, IB = 1.29A – – 1.0 V IC = 4.5A, IB = 1.7A – – 1.3 V IC = 1A, VCE = 5V 7 13 23 4.0 5.5 7.5 Static Characteristics (Cont’d) Emitter Cutoff Current IEBO Emitter–Base Breakdown Voltage VEB = 7.5V, IC = 0 V(BR)EBO IB = 600mA Base–Emitter Resistance Rbe VEB = 7.5V Collector–Emitter Sustaining Voltage VCEO(sus) IB = 0, IC = 100mA, L = 25mH Collector–Emitter Saturation Voltage VCE(sat) IC = 4.5A, IB = 1.1A Base–Emitter Saturation Voltage VBE(sat) DC Current Gain hFE IC = 4.5A, VCE = 1V Diode Forward Voltage VF IF = 4.5A – 1.6 2.0 V Collector Capacitance Cc IE = 0, VCB = 10V, f = 1MHz – 80 – pF Turn–Off Storage Time ts – 5.0 6.0 µs Turn–Off Fall Time tf IC = 4.5A Peak, IB(end) = 1.1A, µ –VBB = 4V, LB = 6µH, (–dIB/dt = 0.6A/µs) – 0.4 0.6 µs Dymanic Characteristics .181 (4.6) Max .126 (3.2) Dia Max .405 (10.3) Max .114 (2.9) Isol .252 (6.4) COLLECTOR .622 (15.0) Max BASE B C E .118 (3.0) Max EMITTER .531 (13.5) Min .098 (2.5) .100 (2.54)