NTE256 Silicon NPN Transistor Darlington w/Damper Diode Description: The NTE256 is a silicon epitaxial planer NPN Darlington transistor in a TO218 type package with an integrated Base–Emitter speed–up diode. This device is particularly suitable for use as an output stage in high power, fast switching applications. Absolute Maximum Ratings: Collector–Base Voltagte (IE = 0), VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V Collector–Emitter Voltage (IB = 0), VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V Emitter–Base Voltage (IC = 0), VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28A Peak (tp = 10ms) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35A Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6A Total Power Dissipation (TC ≤ +25°C), Ptot . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150W Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to + 175°C Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0°C/W Electrical Characteristics: (TC = +25°C unless otherwise specified) Parameter Collector Cutoff Current Emitter Cutoff Current Symbol Test Conditions Min Typ Max Unit ICEO VCEO = 400V, IB = 0 – – 1 mA ICEV VCE = 600V, VBE = 1.5V, Note 1 – – 100 µA VCE = 600V, VBE = 1.5V, TC = +100°C, Note 1 – – 2 mA VEB = 2V, IC = 0, Note 1 – – 175 mA 400 – – V IC = 10A, IB = 0.5A – – 2.0 V IC = 18A, IB = 1.8A – – 2.5 V IC = 22A, IB = 2.2A – – 3.0 V IC = 28A, IB = 5.6A – – 5.0 V IEBO Collector–Emitter Sustaining Voltage VCEO(sus) IC = 100mA, Note 1 Collector–Emitter Saturation Voltage VCE(sat) Note 1. Pulsed: Pulse Width = 300µs, Duty Cycle = 1.5%. Electrical Characteristics (Cont’d): (TC = +25°C unless otherwise specified) Parameter Symbol Min Typ Max Unit IC = 10A, IB = 0.5A, Note 1 – – 2.5 V IC = 18A, IB = 1.8A, Note 1 – – 3.0 V IC = 22A, IB = 2.2A, Note 1 – – 3.3 V VCE = 5V, IC = 10A 30 – – VCE = 5V, IC = 18A 20 – – VF IF = 22A – – 4 V Turn–On Time ton – 0.35 0.6 µs Storage Time ts VCC = 250V, IC = 10A, IB1 = 0.5A, VBE(off) = –5V – 0.8 1.5 µs Fall Time tf – 0.25 0.6 µs VClamp = 250V, IC = 10A, IB1 = 0.5A, VBE(off) = –5V – 0.8 1.5 µs – 0.08 0.5 µs VClamp = 250V, IC = 20A, IB1 = 2A, VBE(off) = –5V – 0.8 1.5 µs – 0.35 0.7 µs Base–Emitter Saturation Voltage DC Current Gain VBE(sat) hFE Diode Forward Voltage Test Conditions Resistive Switching Times Inductive Switching Times Storage Time ts Fall Time tf Storage Time ts Fall Time tf Note 1. Pulsed: Pulse Width = 300µs, Duty Cycle = 1.5%. .060 (1.52) .600 (15.24) .173 (4.4) C C .156 (3.96) Dia. B C .550 (13.97) B .430 (10.92) E E .500 (12.7) Min .055 (1.4) .015 (0.39) .216 (5.45) NOTE: Dotted line indicates that case may have square corners