NTE NTE270

NTE270 (NPN) & NTE271 (PNP)
Silicon Complementary Transistors
Darlington Power Amp, Switch
Description:
The NTE270 (NPN) and NTE271 (PNP) are silicon Darlington complementary power transistors in
a TO218 type package designed for general purpose amplifier and low frequency switching applications.
Features:
D High DC Current Gain: hFE = 1000 Min @ IC = 5A, VCE = 4V
D Collector–Emitter Sustaining Voltage: VCEO(sus) = 100V Min @ 30mA
D Monolithic Construction with Built–In Base–Emitter Shunt Resistor
Absolute Maximum Ratings:
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V
Collector–Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V
Emitter–Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A
Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15A
Continuous Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA
Total Device Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 125W
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C
Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0°C/W
Thermal Resistance, Junction–to–Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35.7°C/W
Note 1. Pulse Width = 5ms, Duty Cycle ≤ 10%.
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
100
–
–
V
OFF Characteristics
Collector–Emitter Sustaining Voltage
Collector Cutoff Current
Emitter Cutoff Current
VCEO(sus) IC = 30mA, IB = 0, Note 2
ICEO
VCE = 50V, IB = 0
–
–
2.0
mA
ICBO
VCB = 100V, IE = 0
–
–
1.0
mA
IEBO
VBE = 5V
–
–
2.0
mA
Note 2. Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2%.
Electrical Characteristics (Cont’d): (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
IC = 5A, VCE = 4V
1000
–
–
IC = 10A, VCE = 4V
500
–
–
IC = 5A, IB = 10mA
–
–
2.0
V
IC = 10A, IB = 40mA
–
–
3.0
V
IC = 10A, IB = 40mA
–
–
3.5
V
VCC = 30V, IC = 5A,
IB = 20mA, Duty Cycle ≤ 2%,
IB1 = IB2, RC & RB Varied,
TJ = +25°C
–
0.15
–
µs
–
0.55
–
µs
–
2.5
–
µs
–
2.5
–
µs
ON Characteristics (Note 2)
DC Current Gain
hFE
Collector–Emitter Saturation Voltage
VCE(sat)
Base–Emitter Saturation Voltage
VBE(sat)
Switching Characteristics (Resistive Load)
Delay Time
td
Rise Time
tr
Storage Time
ts
Fall Time
tf
Note 2. Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2%.
NTE270
NTE271
C
C
B
B
E
E
.060 (1.52)
.600
(15.24)
.173 (4.4)
C
.156
(3.96)
Dia.
B
C
.550
(13.97)
.430
(10.92)
E
.500
(12.7)
Min
.055 (1.4)
.216 (5.45)
.015 (0.39)
NOTE: Dotted line indicates that
case may have square corners