2N3415 Silicon NPN Transistor General Purpose Amplifier TO−92

2N3415
Silicon NPN Transistor
General Purpose Amplifier
TO−92 Type Package
Absolute Maximum Ratings: (TA = +25C unless otherwise specified)
Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V
Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V
Emitter−Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA
Total Device Dissipation (TA = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 625mW
Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.0mW/C
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55 to +150C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55 to +150C
Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 83.3C/W
Thermal Resistance, Junction−to−Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200C/W
Note 1. These ratings are limiting values above which the serviceability of any semiconductor may
be impaired.
Note 2. These ratings are based on a maximum junction temperature of 150C.
Electrical Characteristics: (TA = +25C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Collector−Emitter Breakdown Voltage
V(BR)CEO IC = 10mA, IB = 0, Note 3
25
−
−
V
Collector−Base Breakdown Voltage
V(BR)CBO IC = 10A, IE = 0
25
−
−
V
Emitter−Base Breakdown Voltage
V(BR)EBO IE = 10A, IC = 0
5.0
−
−
V
VCB = 25V, IE = 0
−
−
0.1
A
VCB = 25V, IE = 0, TA = +100C
−
−
15
A
VBE = 5V, IC = 0
−
−
0.1
A
Collector Cutoff Current
Emitter Cutoff Current
ICBO
IEBO
Note 3. Pulse Test: Pulse Width  300s, Duty Cycle  2%
Electrical Characteristics (Cont’d): (TA = +25C unless otherwise specified)
Parameter
Symbol
DC Current Gain
Test Conditions
Min
Typ
Max
Unit
hFE
VCE = 4.5V, IC = 2mA, Note 3
180
−
540
Collector−Emitter Saturation Voltage
VCE(sat)
IC = 50mA, IB = 3mA, Note 3
−
−
0.3
V
Base−Emitter Saturation Voltage
VBE(sat)
IC = 50mA, IB = 3mA, Note 3
0.6
−
1.3
V
IC = 2mA, VCE = 4.5V, f = 1kHz,
Note 3
180
−
−
Small−Signal Current Gain
hfe
Note 3. Pulse Test: Pulse Width  300s, Duty Cycle  2%
.135 (3.45) Min
.210
(5.33)
Max
Seating Plane
.500
(12.7)
Min
.021 (.445) Dia Max
E C B
.100 (2.54)
.050 (1.27)
.165
(4.2)
Max
.105 (2.67) Max
.105 (2.67) Max
.205 (5.2) Max