MPSA13 Silicon NPN Transistor Darlington, General Purpose

MPSA13
Silicon NPN Transistor
Darlington, General Purpose Amplifier, Preamp, Driver
TO−92 Type Package
Absolute Maximum Ratings: (TA = +25C unless otherwise specified)
Collector−Emitter Voltage, VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
Emitter−Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10V
Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.2A
Total Device Dissipation (TA = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 625mW
Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5mW/C
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55 to +150C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55 to +150C
Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 83.3C
Thermal Resistance, Junction−to−Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200C/W
Note 1. Device mounted on FR−4 PCB 1.6 inch x 1.6 inch x 0.06 inch.
Electrical Characteristics: (TA = +25C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
30
−
−
V
OFF Characteristics
Collector−Emitter Breakdown Voltage
V(BR)CES IC = 100A, VBE = 0
Collector Cutoff Current
ICBO
VCB = 30V, IE = 0
−
−
100
nA
Emitter Cutoff Current
IEBO
VBE = 10V, IC = 0
−
−
100
nA
hFE
IC = 10mA, VCE = 5V
5,000
−
−
IC = 100mA, VCE = 5V
10,000
−
−
ON Characteristics (Note 2)
DC Current Gain
Collector−Emitter Saturation Voltage
VCE(sat)
IC = 100mA, IB = 0.1mA
−
−
1.5
V
Base−Emitter ON Voltage
VBE(on)
IC = 100mA, VCE = 5V
−
−
2.0
V
125
−
−
MHz
Small−Signal Characteristics
Current Gain−Bandwidth Product
fT
IC = 10mA, VCE = 10V, f =
100MHz
Note 2. Pulse Test: Pulse Width  300s, Duty Cycle  2%
C
B
E
.135 (3.45) Min
.210
(5.33)
Max
Seating Plane
.500
(12.7)
Min
.021 (.445) Dia Max
E B C
.100 (2.54)
.050 (1.27)
.165
(4.2)
Max
.105 (2.67) Max
.205 (5.2) Max
.105 (2.67) Max