MPSA56 Silicon PNP Transistor General Purpose Amplifier

MPSA56
Silicon PNP Transistor
General Purpose Amplifier
Absolute Maximum Ratings:
Collector−Emitter Voltage, VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −80V
Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −80V
Emitter−Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −4V
Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −500mA
Total Device Dissipation (TA = 25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 625mW
Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5mW/C
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55 to +150C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55 to +150C
Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 83.3C/W
Thermal Resistance, Junction−to−Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200C/W
Electrical Characteristics: (TA = +25C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Collector−Emitter Breakdown Voltage
V(BR)CEO IC = −1.0mA, IB = 0, Note 1
−80
−
−
V
Collector−Base Breakdown Voltage
V(BR)CBO IC = −100A, IE = 0
−80
−
−
V
Emitter−Base Breakdown Voltage
V(BR)EBO IE = −100A, IC = 0
−4.0
−
−
V
OFF Characteristics
Collector Cutoff Current
ICEO
VCE = −60V, IB = 0
−
−
−0.1
A
ICBO
VCB = −80V, IE = 0
−
−
−0.1
A
hFE
VCE = −1.0V, IC = −10mA
100
−
−
VCE = −1.0V, IC = −100mA
100
−
−
ON Characteristics
DC Current Gain
Collector−Emitter Saturation Voltage
VCE(sat)
IC = −100mA, IB = −10mA
−
−
−0.2
V
Base−Emitter Saturation Voltage
VBE(sat)
IC = −100mA, VCE = −1.0V
−
−
−1.2
V
IC = -100mA, VCE = -1.0V, f = 100MHz
50
−
−
MHz
Small Signal Characteristics
Current Gain Bandwidth Product
ft
Note 1. Pulse Test: Pulse Width  300s, Duty Cycle  2%.
.135 (3.45) Min
.210
(5.33)
Max
Seating Plane
.021 (.445) Dia Max
.500
(12.7)
Min
E B C
.100 (2.54)
.050 (1.27)
.165
(4.2)
Max
.105 (2.67) Max
.205 (5.2) Max
.105 (2.67) Max