OLF249 ISO LINK Radiation Tolerant Phototransistor Hermetic Surface Mount Optocoupler .015±.002 1 ANODE 7 3 4 S 2 OLF XXX BASE XXYY 1 8 7 6 5 .050 BSC COLLECTOR 5 CATHODE EMITTER 2 6 .180 SQ. MAX .200 MIN. .100 MAX. .030±.005 .004/.006 SEATING PLANE SCHEMATIC Features ♦ Hermetic SMT package ♦ Compliant surface mounting leads ♦ High current transfer ratio ♦ Small package size ♦ High reliability and rugged construction ♦ Hi-rel screening available ♦ Radiation tolerant PACKAGE OUTLINE Description The OLF249 consists of a light emitting diode optically coupled to a NPN silicon phototransistor mounted in a 8-pin hermetic surface mount flat pack package. The leads can be formed to provide compliant solder connections to the mounting substrate. Electrical parameters are similar to the JEDEC registered 4N49 optocoupler but with much better CTR degradation characteristics due to radiation exposure Special electrical parametric selections are availabe on request. NOTES: 1. Measured between pins 1, 2 , 3 and 4 shorted together and pins 5, 6, 7 and 8 shorted together. TA = 25°C and duration = 1 second. 2. Derate linearly to 125°C free-air temperature at 0.67 mA / °C above 65°C. 3. For pulse width ≤ 1 µS, pulse repetition rate ≤ 300 pps. 4. Derate linearly to 125°C free-air temperature at 3.0 mW / °C above 25 °C Absolute Maximum Ratings Coupled Input to Output Isolation Voltage1 Storage Temperature Range Operation Temperature Range Mounting Temperature Range ( 10 seconds max. ) ± 1000 Vdc -65 °C to + 150 °C -55 °C to + 125 °C 240 °C Input Diode Average Input Current2 Peak Forward Current3 Reverse Voltage 40 mA 1A 2.0 V Output Detector Collector - Emitter Voltage Emitter - Base Voltage Collector - Base Voltage Continuous Collector Current Power Dissipation4 40 V 7V 45 V 50 mA 300 mW ELECTRICAL CHARACTERISTIC ( TA = 25 °C, Unless Otherwise Specified ) Parameter Symbol Min Max On-State Collector Current IC (ON) 2.0 2.8 2.0 12 On-State Coll.-Base Current ICB(ON) 30 Saturation Voltage Breakdown Voltage Collector to Emitter Collector to Base Emitter to Base Off-State Leakage Current Collector to Emitter Collector to Base BVCEO BVCBO BVEBO ICB(OFF) Input Forward Voltage VF Input Reverse Current IR 1.8 1.4 1.2 µA I F = 10 mA, VCB = 5.0V V I F = 2mA, IC =2.0mA V V V I CE = 1 mA I CB = 100 µA I EB = 100 µA 100 100 10 nA µA nA VCE = 20V VCE = 20V, TA =100 °C VCB = 20V 2.2 1.8 1.6 V V V I F = 10mA, TA = -55°C I F = 10mA I F = 10mA, TA = 100°C 100 µA V R = 2.0V Ω V I-O = ±1000Vdc Input to Output Resistance rI-O Input to Output Capacitance c I-O 5 pF V I-O = 0V, f = 1 MHz tr tf 25 25 µS µS VCC = 10V, RL = 100 Ω I F = 5mA Rise Time Fall Time Fig. Note I F = 1 mA, VCE = 5.0V I F = 2 mA, VCE = 5.0V, TA = -55°C I F = 2 mA, VCE = 5.0V, TA = 100°C 40 45 7 ICE(OFF) Test Conditions mA mA mA 0.3 VCE(SAT) Units 10 11 2,3 1 1 1 1 1 4 ALL TYPICAL @ TA = 25°C TYPICAL PERFORMANCE CURVES 9 NORMALIZED COLLECTOR CURRENT 125 °C -55 °C 25 °C 10 1 .1 0.9 1.1 1.3 1.5 1.7 1.9 8 NORMALIZED TO: I F = 1 mA 7 VCE = 5V TA = 25 °C 6 5 4 3 2 1 0 2.1 0 1 2 3 4 5 6 7 8 Fig. 2 - Normalized Fig. 1 - Diode Forward Characteristics Ic vs. I 1.8 1.6 NORMALIZED TO: 1.4 V CE = 5V TA = 25 °C 1.2 1.0 0.8 I F = 1 mA 0.6 0.4 0.2 -75 -50 -25 0 25 50 75 100 125 150 AMBIENT TEMPERATURE (°C) Fig. 3 - Normalized CTR vs. Temperature INPUT IF V CC Pulse Width = 100µS Duty Cycle = 1% IF 0 90 % V OUT 10 % 0 tr 9 10 I F = FORWARD CURRENT ( mA ) V F - FORWARD VOLTAGE ( V ) NORMALIZED CTRCE I F - FORWARD CURRENT ( mA ) 100 V OUT tf 100Ω Fig. 4 - Switching Test Circuit RL F