NTE NTE221

NTE221
MOSFET
Dual Gate, N–Channel for
VHF TV Receivers Applications
Description:
The NTE221 is an N–channel depletion type, dual–insulated gate, field–effect transistor that utilizes
MOS construction. This device has characteristics which makes it highly desirable for use in RF–amplifier applications.
Features:
D Extremely Low Feedback Capacitance
D High Power Gain
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Drain–to–Source Voltage, VDS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0 to +20V
Gate 1–to–Source Voltage, VG1S
Continuous (DC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +1V to –8V
Peak AC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +20V to –8V
Gate 2–to–Source Voltage, VG2S
Continuous (DC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –8V to 40% of VDS
Peak AC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –8V to +20V
Drain–to–Gate Voltage, VDG1 or VDG2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +20V
Pulsed Drain Current (Note 1), ID . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA
Transistor Dissipation (TA = +25°C), PT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400mW
Derate Linearly Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.67mW/°C
Operating Ambient Temperature Range, Topr . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +175°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +175°C
Lead Temperature (During Soldering, 1/32” from seating surface, 10sec max), TL . . . . . . . . +265°C
Note 1. Pulse test: Pulse Width ≤ 20ms, Duty Cycle ≤ 15%.
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Gate 1–to–Source Cutoff Voltage
VG1S(off) VDS = 15V, VG2S = 4V, ID = 200mA
–
–2
–
V
Gate 2–to–Source Cutoff Voltage
VG2S(off) VDS = 15V, VG1S = 0, ID = 200mA
–
–2
–
V
Gate 1 Leakage Current
IG1SS
VG1S = 20V, VG2S = 0, VDS = 0
–
–
1
nA
Gate 2 Leakage Current
IG2SS
VG2S = 20V, VG1S = 0, VDS = 0
–
–
1
nA
Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter
Symbol
Drain Current
Test Conditions
IDSS
Forward Transconductance
gfs
Min
Typ
Max
Unit
VDS = 13V, VG1S = 0, VG2S = 4V
–
18
–
mA
VDS = 13V, ID = 10mA, VG2S = 4V,
f = 1kHz
–
1000
–
µmhos
Performance Characteristics: (TA = +25°C, f = 200MHz, Note 2 unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Small–Signal, Short Circuit Reverse
Transfer Capacitance
Crss
(Drain–to–Gate 1) at f = 1MHz
–
0.02
0.03
pF
Output Capacitance
Coss
–
2.2
–
pF
Input Capacitance
Ciss
–
5.5
–
pF
Input Resistance
riss
–
1.2
–
kΩ
Output Resistance
ross
–
2.8
–
kΩ
Magnitude of Forward Transconductance
|Yfs|
–
11000
–
µmhos
–
–46
–
deg
–
20
–
dB
–
20
–
dB
Phase Angle of Forward Transadmittance
Maximum Available Power Gain
MAG
Maximum Usable Power Gain
(Unneutralized)
MUGu
Note 3
Power Gain
GPS
–
17.5
–
dB
Noise Figure
NF
–
–
5
dB
Note 2. VG1S is adjusted for ID = 10mA, Gate 2 at AC ground potential, VDS = 13V, VG2S = 4V.
Note 3. Limited by practical design considerations.
.220 (5.58) Dia
.185 (4.7) Dia
.190
(4.82)
.030 (.762)
.500
(12.7)
Min
.018 (0.45) Dia
Gate 2
Drain
Gate 1
45°
Source/Case
.040 (1.02)